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Patent
Covalent Materials Corporation | Date: 2015-06-30

One aspect of the heat insulator of the present invention includes a porous sintered body having a porosity of 70 vol % or more and less than 91 vol %, and pores having a pore size of 0.8 m or more and less than 10 m occupy 10 vol % or more and 70 vol % or less of the total pore volume, while pores having a pore size of 0.01 m or more and less than 0.8 m occupy 5 vol % or more and 30 vol % or less of the total pore volume. The porous sintered body is formed from an MgAl


Patent
Covalent Materials Corporation | Date: 2013-02-07

The present invention relates to a ceramics composite including: a matrix phase including Al


Patent
Covalent Materials Corporation | Date: 2013-02-21

A carbon-fiber-reinforced silicon-carbide-based composite material which has better strength and toughness, and a braking material, such as a brake disc using the composite material, are provided. By using the carbon-fiber-reinforced silicon-carbide-based composite material including a bundle of fibers having chopped carbon fibers arranged in parallel and the other carbon component, carbon, silicon, and silicon carbide, in which the fiber bundle is flat, its cross-section perpendicular to its longitudinal direction has a larger diameter of 1 mm or more, a ratio of the larger diameter to a smaller diameter is from 1.5 to 5, and a plurality of the fiber bundles are randomly oriented substantially along a two-dimensional plane, and a two-dimensional side serves as a braking side to thereby constitute the braking material.


Patent
Covalent Materials Corporation | Date: 2013-08-21

A heat-insulating material is provided in which thermal conductivity is controlled not to increase and good insulation properties are held even in a high temperature range. The heat-insulating material is formed of a spinel porous sintered body having a porosity of 65 to 90 vol. % and represented by a chemical formula XAl


Patent
Covalent Materials Corporation | Date: 2014-04-22

A nitride semiconductor substrate is provided which is suitable for a high withstand voltage power device and prevents a warp and a crack from generating in a Si substrate when forming a thick nitride semiconductor layer on the substrate. A nitride semiconductor substrate

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