Covalent Materials Co.

Niigata-shi, Japan

Covalent Materials Co.

Niigata-shi, Japan
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DUBLIN--(BUSINESS WIRE)--Research and Markets has announced the addition of the "Global Advanced Ceramics Market Insights, Opportunity, Analysis, Market Shares And Forecast 2017 - 2023" report to their offering. The global advanced ceramics market is projected to grow at a CAGR of 6.6% during 2016-2023 Growth in bio ceramics applications in medical sector is one of the driving factors which are driving the growth in global advanced ceramic market such as dental implants, hip joints replacement, and in replacement of knee joints. Hydroxyapatite is a form of bio ceramics. Hydroxyapatite is a naturally occurring mineral of calcium apatite. Hydroxyapatite used in dental surgery due to various properties such as resistant to fracture and derived from tooth enamel. In the automotive industry, rising efficiency standards will drive demand for advanced ceramic filters and also for ceramic engines. High-pressure, high temperature operating conditions in blast furnaces in the chemical industry will further boost the ceramic demand. Amongst various forms of ceramics, alumina is used particularly in the electronic industry due to properties such as high modulus, wear resistance, and chemical inertness. The electronic devices market is the major application segment in 2015 which accounted for over USD 18 billion of the market. They have a wide usage in insulating material, superconducting, and semiconducting applications. Vesuvius PLC NSG group, Kyocera Corp, Blasch Precision Ceramics Inc., Murata Manufacturing Co. Ltd, Corning Inc., AGC group, CoorsTek, Saint-Gobain Ceramic Materials, Advanced Ceramic Manufacturing, Rauschert Steinbach GmbH, Mcdanel Advanced Ceramic Technologies LLC, Morgan Advanced Materials, and CeramTec are some of the major key players of global advanced ceramic market. CoorsTek is the major player in the North American region and announced the acquisition of Covalent Materials, Japanese engineered advanced ceramics manufacturer. With this strategic acquisition now it has a portfolio of over 300 materials, including alumina, silica etc. CoorsTek it has announced the formation of Coorstek membrane sciences which is a producer of ion-conducting ceramic membranes which has a major use in direct gas to gas chemicals and gas to liquid conversion applications. CoorsTek also develops and manufactures ceramic micro channel heat exchanger. For more information about this report visit http://www.researchandmarkets.com/research/mc6jkj/global_advanced


Kato T.,Osaka University | Nakamura Y.,Osaka University | Kikkawa J.,Osaka University | Sakai A.,Osaka University | And 7 more authors.
Thin Solid Films | Year: 2010

The use of Si(011)/Si(001) direct silicon bonding (DSB) substrates is a key for future complementary metal-oxide-semiconductor device technology. In conventional bonding process, it is necessary to remove interfacial SiO2 to achieve direct atomic bonding. In this study, using X-ray microdiffraction and transmission electron microscopy, we investigate the structural changes caused by oxide out-diffusion annealing (ODA). It is revealed that crystallinity of the bonded Si(011) layer is degraded after low temperature ODA and gradually recovered with an increase in the ODA temperature and time, which is well correlated with the interfacial SiO2/Si morphology. Characteristic domain textures depending on the ODA temperature are also detected. © 2009 Elsevier B.V. All rights reserved.


Kanbe H.,Kochi University of Technology | Hirose M.,Kochi University of Technology | Hirose M.,Covalent Materials Co. | Ito T.,Kochi University of Technology | Taniwaki M.,Kochi University of Technology
Journal of Electronic Materials | Year: 2010

Ge/Si heterojunctions formed by wet wafer bonding were observed using transmission electron microscopy and energy-dispersive x-ray spectroscopy. For the samples annealed at 880°C, there was a transition layer at the heterointerface with modified regions in the Si and Ge extending 20 nm to 30 nm from the interface. In these modified regions, crystal defects were observed, and a large amount of Ge was detected on the Si side of the junction. For the samples annealed at 250°C or 350°C, the transition layers had an amorphous-like structure with a thickness of about 10 nm. No modified layer or enlargement of lattice spacing was observed. © 2010 TMS.


Kitagawa F.,Covalent Materials Co. | Takei S.,Covalent Materials Co. | Imaizumi T.,Covalent Materials Co. | Tabata Y.,Kyoto University
Tissue Engineering - Part C: Methods | Year: 2013

Human mesenchymal stem cells (hMSCs) that can differentiate into chondrocytes are a potential autologous cell source for repair of damaged tissue. Current methods usually induce the formation of all three chondrocyte phenotypes, hyaline, fibrous, and elastic, without the ability to selectively induce only one of them. By controlling the size of hMSC cell clusters, it may be possible to direct differentiation more uniformly toward hyaline chondrocytes. We designed new cell culture platforms containing microwells of different diameters. The platforms and wells were composed of a zirconia ceramics substratum. hMSCs briefly adhered to the substratum before releasing and entering the microwells. The physical restraints imposed by the microwells enabled hMSC clusters to homogenously differentiate into hyaline chondrocyte-like cells. Chondrogenic aggregates in microwells expressed the hyaline chondrocyte-specific genes Col II, aggrecan (ACAN), and cartilage oligomeric protein (COMP). The cultures also produced hyaline chondrocyte-specific matrix proteins Col II and ACAN homogenously throughout the aggregates. In contrast, chondrogenesis in pellet cultures was heterogeneous with the expression of nonhyaline chondrocyte genes CD105, Col X, and Col I. In these pellet cultures, hyaline and nonhyaline chondrocyte-specific matrix proteins were distributed heterogeneously. Thus, this novel ceramic microwell substratum technology efficiently directed the differentiation of hyaline chondrocyte-like cells from hMSCs. These results indicate that there is a close relationship between hMSC cluster size regulation in the microwells and differentiation tendency. This microwell culture differentiation method will provide a valuable experimental system for both experimental and potential clinical studies. © 2013, Mary Ann Liebert, Inc.


Yamashita M.,Osaka University | Nakamura Y.,Osaka University | Nakamura Y.,Japan Science and Technology Agency | Yamamoto A.,Osaka University | And 3 more authors.
Applied Surface Science | Year: 2013

We have investigated vicinal Si(1 1 0) surfaces with various off-angles using atomic force microscopy and transmission electron microscopy. The vicinal surfaces were tilted from the exact Si(1 1 0) surfaces by 2-8° toward the [1 1̄0] direction. Peculiar surface structures were observed with a strong dependence on the off-angles, including triangular pyramid-like structures on 2° off surfaces, line structures on 4° and 8° off surfaces and nanometer-height mountain structures on 6° off surfaces. The structures on 2° and 4° off surfaces were based on the stair-like structure composed of Si(1 1 0) terraces and monolayer steps. On the other hand, 6° and 8° off surfaces could be understood in terms of Si(1 1 0) terraces and bunched steps. © 2012 Elsevier B.V. All rights reserved.


Aoki T.,Okayama Prefectural University | Aoki T.,Covalent Materials Co. | Kariyazaki H.,Okayama Prefectural University | Sueoka K.,Okayama Prefectural University | And 2 more authors.
Japanese Journal of Applied Physics | Year: 2010

Si(110) and Si(100) directly bonded (DSB) substrates are paid attention as candidate materials for the substrate of next-generation complementary metal oxide semiconductors (CMOSs). From a practical viewpoint on DSB substrates, we have investigated the gettering efficiency at the bonded interfaces of DSB substrates. In our experiments, DSB substrates were intentionally contaminated with 3d transition metals (Fe, Cu, and Ni) and then annealed at 1000 °C. The dependence of the concentrations of these metals on the depth of what was evaluated by secondary ionization mass spectrometry (SIMS). It was found that the bonded interface has a good gettering ability for these metals. Results of the preferential etching method support the results of SIMS. Transmission electron microscopy (TEM) showed that (i) the gettered Fe and Ni formed the silicides FeSi2 and Ni2Si3, respectively; however, (ii) no Cu precipitates formed at the bonded interface. Furthermore, we confirmed that the bonded interface can be effective gettering sites for Cr and Ti. This result indicates that the bonded interface can become effective gettering sites for metals with low diffusivities, if they reach the interface just below the device active layer. © 2010 The Japan Society of Applied Physics.


Kariyazaki H.,Okayama Prefectural University | Aoki T.,Okayama Prefectural University | Aoki T.,Covalent Materials Co. | Izunome K.,Covalent Materials Co. | Sueoka K.,Okayama Prefectural University
Journal of Applied Physics | Year: 2010

Direct silicon bonded (DSB) substrates with (110)/(100) hybrid orientation technology are attracting considerable attention as a promising technology for high performance bulk complementary metal-oxide semiconductor technology. We have investigated the structure and the gettering efficiency of the (110)/(100) interface parallelling each 〈 110 〉 direction (DSB interface) by molecular dynamics (MD) and first-principles calculation. In MD calculations, initial calculation cells of 15 atomic-configurations with coincidence-site lattices were prepared. It was found that (i) the calculated DSB interface was stable independent of the initial atomic-configurations and (ii) the interfacial structures were essentially the same among the calculated models. Moreover, the calculated interfacial structure corresponds to the reported TEM observation. The first-principles calculation showed that Si atoms in the DSB interface formed covalent bonding. The dangling bonds in Si (110) and (100) surfaces disappeared due to restructuring in the DSB interface. Furthermore, the DSB interface, which exists just below the device active region, was found to be an efficient gettering site for Al, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, and Hf atoms. © 2010 American Institute of Physics.


Kariyazaki H.,Okayama Prefectural University | Aoki T.,Okayama Prefectural University | Aoki T.,Covalent Materials Co. | Izunome K.,Covalent Materials Co. | Sueoka K.,Okayama Prefectural University
Physica Status Solidi (C) Current Topics in Solid State Physics | Year: 2011

Direct silicon bonded (DSB) substrates with (110)/(100) hybrid orientation are promising for high-performance bulk complementary metal-oxide semiconductor technology. We have studied the interfacial structure of the Si (110)/(100) paralleling each 〈110〉 direction, including screw defects, by first-principles calculation. The screw defects were characterized by analysing the atomic configuration and the chemical bonding. Furthermore, the periodicity of the screw defects is discussed in comparison the experimental results. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.


Sakai Y.,Covalent Materials Co. | Yoshida K.,Covalent Materials Co. | Arai A.,Covalent Materials Co. | Takai T.,Covalent Materials Co.
Zairyo/Journal of the Society of Materials Science, Japan | Year: 2015

We have developed a heat-transfer tube for use as a heat exchanger in waste gasification and melting systems. This heat-transfer tube, which is made of a pressureless-sintered silicon carbide material, is a single end-type with cantileversupport. Ceramic heat-transfer tubes fixed both ends to a metallic heat exchanger body are easily broken, due todifferences in thermal expansion at high temperatures, but silicon carbide tubes on a cantilever support do not have thisproblem. We measure basic properties of the heat-transfer tube such as the coefficient of heat transfer and corrosionresistance, and discuss ash removal. We conduct a low-temperature heat transfer experiment, using saturated steam at0.4 MPa pressure as a heating medium, and actual exhaust gas from a waste gasification and melting system at about1150 K as a high-temperature range. Air of 290 K, 79.2 m3[normal]/h reaches 820 K after two heat exchanger passes.Near the dew point, silicon carbide shows high corrosion resistance to the exhaust gas. Regarding ash removal, sandblasting effectively cleans the tube surface, because of hardness of a pressureless-sintered silicon carbide material.We simulate application of a large heat transfer tube, about φ200 x φ179 x 1800 mm, in a furnace. Results indicate thata heat transfer tube made of pressureless-sintered silicon carbide is suited to waste gasification and melting systems. © 2015 The Society of Materials Science.

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