Nakano S.,Corporate Research and Development Center |
Saito N.,Corporate Research and Development Center |
Miura K.,Corporate Research and Development Center |
Sakano T.,Corporate Research and Development Center |
And 4 more authors.
Journal of the Society for Information Display | Year: 2012
We have successfully reduced threshold voltage shifts of amorphous In-Ga-Zn-O thin-film transistors (a-IGZO TFTs) on transparent polyimide films against bias-temperature stress below 100mV, which is equivalent to those on glass substrates. This high reliability was achieved by dense IGZO thin films and annealing temperature below 300 °C. We have reduced bulk defects of IGZO thin films and interface defects between gate insulator and IGZO thin film by optimizing deposition conditions of IGZO thin films and annealing conditions. Furthermore, a 3.0-in. flexible active-matrix organic light-emitting diode was demonstrated with the highly reliable a-IGZO TFT backplane on polyimide film. The polyimide film coating process is compatible with mass-production lines. We believe that flexible organic light-emitting diode displays can be mass produced using a-IGZO TFT backplane on polyimide films. © Copyright 2012 Society for Information Display.