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Corning, NY, United States

Sharma H.N.,University of Connecticut | Pahalagedara L.,University of Connecticut | Joshi A.,Corning Incorporated | Suib S.L.,University of Connecticut | Mhadeshwar A.B.,University of Connecticut
Energy and Fuels | Year: 2012

Non-catalytic oxidation kinetics of diesel engine soot and more than a dozen commercial carbon black samples was investigated using non-isothermal and isothermal thermogravimetric analysis (TGA) experiments. The effect of various operating parameters, such as oxygen flow rate, initial sample mass, oxygen partial pressure, crucible type, and ramp rate, on the oxidation rate was investigated. Three types of TGA experiments (non-isothermal single-ramp rate, non-isothermal multiple-ramp rates, and isothermal) were conducted and analyzed to extract the kinetic parameters for oxidation. Activation energies for oxidation of carbon black samples ranged from 125 to 257 kJ/mol, whereas that for soot oxidation was ∼155 kJ/mol. Furthermore, oxidation rate trends were explained on the basis of structural characteristics, such as scanning electron microscopy (SEM)-based average particle size and Brunauer-Emmett-Teller (BET) surface area. In general, a low particle size and high surface area were associated with a higher oxidation rate and vice versa. A thorough understanding of the non-catalytic oxidation kinetics developed in this work along with the correlation of the oxidation rate with the structural parameters may assist in efficient oxidation of diesel engine soot during the regeneration of diesel particulate filters. © 2012 American Chemical Society. Source

Xue L.,Binghamton University State University of New York | Liu D.,Binghamton University State University of New York | Lee H.,Binghamton University State University of New York | Yu D.,Apple Inc | And 2 more authors.
ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2013 | Year: 2013

Glass is widely used as cover glass to protect the smartphones, tablets, PCs, and TVs from everyday wear and tear nowadays. There has been an increasing effort to understand the global behavior of glass substrate under impact, but the behavior of the edge for the thin glass has rarely been touched. In this study, the dynamic response of the glass edge when impacted with 1.75-inch steel ball from different heights (different potential energy) and different angles is studied. High-speed camera is applied for the direct visualization of the whole impact process. The Digital Image Correlation (DIC) method enables to obtain displacements (in-plane displacement and out-of-plane displacement) of the glass during the impact process. The failure mode for the edge impact is found to be predominantly buckling. The tape used in this study decreases wave propagation from the impact location. In addition, the FEA model of edge impact test is developed in ANSYS/LS-DYNA™. Copyright © 2013 by ASME. Source

Usenko A.,Corning Incorporated | Senawiratne J.,Corning Incorporated
ECS Transactions | Year: 2010

Oxygen plasma was used to convert the top part of Si3N 4film into SiO2. Surface roughness remarkably improves because of the process. SiO2, at surface now allows rendering surface hydrophilic. Both effects - smoothening and conversion - are favorable for further wafer bonding. Silicon wafers with the top-reoxidized nitride film successfully bond to glass substrates. The bonding allowed layer transfer. Silicon-on-glass substrates with a barrier nitride film between the silicon and glass were fabricated. ©The Electrochemical Society. Source

Shorey A.B.,Corning Incorporated | Lu R.,Corning Incorporated
Advancing Microelectronics | Year: 2016

Glass provides many opportunities for advanced packaging. The most obvious advantage is given by the material properties. As an insulator, glass has low electrical loss, particularly at high frequencies. The relatively high stiffness and ability to adjust the coefficient of thermal expansion gives advantages to manage warp in glass core substrates and bonded stacks for both through glass vias (TGV) and carrier applications. Glass also gives advantages for developing cost effective solutions. Glass forming processes allow the potential to form both in panel format as well as at thicknesses as low as 100 um, giving opportunities to optimize or eliminate current manufacturing methods. As the industry adopts glass solutions, significant advancements have been made in downstream processes such as glass handling and via/surface metallization. Of particular interest is the ability to leverage tool sets and processes for panel fabrication to enable cost structures desired by the industry. Here, we provide an update on advancements in these areas as well as handling techniques to achieve desired process flows. We also provide the latest demonstrations of electrical, thermal and mechanical reliability. Source

Dunn T.,Corning Incorporated | Lee C.,Corning Incorporated | Tronolone M.,Corning Incorporated | Shorey A.,Corning Incorporated
Proceedings - Electronic Components and Technology Conference | Year: 2012

There is a constant desire to increase substrate size in order to improve cost effectiveness of semiconductor processes. As the wafer diameter has increased from 2" to 12", the thickness has remained largely the same, resulting in a wafer form factor with inherently low stiffness. Gravity induced deformation becomes important when using traditional metrology tools and mounting strategies to characterize a wafer with such low stiffness. While there are strategies used to try to reduce the effects of deformation, gravitational sag provides a large source of error in measurements. Furthermore, glass is becoming an important material for substrates in semiconductor applications and metrology tools developed for use for characterizing silicon are inherently less suitable for glass. Using a novel mounting strategy and a measurement technique based on optical interference provides an opportunity to improve on the methodologies utilized to characterize wafer flatness (warp, bow) and total thickness variation (TTV). Not only can the accuracy of the measurement be improved, using an interference based technique allows for full wafer characterization with spatial resolution better than 1 mm, providing substantially more complete wafer characterization. © 2012 IEEE. Source

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