Fukasawa M.,Core Device Development Group |
Fukasawa M.,Nagoya University |
Miyawaki Y.,Nagoya University |
Kondo Y.,Nagoya University |
And 10 more authors.
Japanese Journal of Applied Physics | Year: 2012
Photon-enhanced etching of SiN x:H films caused by the interaction between vacuum ultraviolet (VUV)/ultraviolet (UV) radiation and radicals in the fluorocarbon plasma was investigated by a technique with a novel sample setup of the pallet for plasma evaluation. The simultaneous injection of UV radiation and radicals causes a dramatic etch rate enhancement of SiN x:H films. Only UV radiation causes the film shrinkage of SiN x:H films owing to hydrogen desorption from the film. Capacitance-voltage characteristics of SiN x:H/Si substrates were studied before and after UV radiation. The interface trap density increased monotonically upon irradiating the UV photons with a wavelength of 248 nm. The estimated effective interface trap generation probability is 4.74 × 10 -7 eV -1·photon -1. Therefore, the monitoring of the VUV/UV spectra during plasma processing and the understanding of its impact on the surface reaction, film damage and electrical performance of underlying devices are indispensable to fabricate advanced devices. © 2012 The Japan Society of Applied Physics.
Oishi H.,Core Device Development Group |
Suzuki T.,Core Device Development Group |
Bairo M.,Core Device Development Group |
Mori S.,Core Device Development Group |
And 2 more authors.
IEEE International Conference on Microelectronic Test Structures | Year: 2012
We developed a new test structure consisting of a MOSFET array that can accurately measure off-leakage current (Ioff). The features of this structure are that MOSFETs' source and drain are directly connected to probing pads and that each pair of source and drain terminals is unshared to avoid Ioff contamination by untargeted MOSFETs. The structure is implemented in scribe lines for the 90nm technology node and beyond, and the measurements of MOSFET characteristics for the array and non-array structures are well correlated. © 2012 IEEE.