Golden, CO, United States
Golden, CO, United States

CoorsTek, Inc. is a privately owned manufacturer of technical ceramics, semiconductor tooling, plastic tubing, medical devices and other industrial products. CoorsTek’s headquarters and primary factories are located in Golden, Colorado, USA, near the foothills west of Denver. The company is owned by a trust of the Coors family. The president and chairman is John K. Coors, a great-grandson of founder and brewing magnate Adolph Coors, Sr.. Wikipedia.

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Patent
CoorsTek Inc. | Date: 2016-12-20

Particles for a monolithic refractory are made of a spinet porous sintered body which is represented by a chemical formula of MgAl_(2)O_(4), wherein pores having a pore size of 0.01 m or more and less than 0.8 m occupy 10 vol % or more and 50 vol % or less with respect to a total volume of pores having a pore size of 10 m or less in the particles, and the particles for a monolithic refractory have grain size distribution in which particles having a particle size of less than 45 m occupy 60 vol % or less, particles having a particle size of 45 m or more and less than 100 m occupy 20 vol % or more and 60 vol % or less, and particles having a particle size of 100 m or more and 1000 m or less occupy 10 vol % or more and 50 vol % or less.


Patent
CoorsTek Inc. | Date: 2016-12-03

The present invention provides a process for producing hydrogen bis(fluorosulfonyl)-imide (HFSI) by fluorination of a liquid hydrogen bis(chlorosulfonyl)imide (HCSI) using a gaseous hydrogen fluoride. In some embodiments, HFSI that is produced is separated from the reaction mixture as a gas and is condensed to collect a liquid HFSI.


A method for manufacturing a corrosion resistant member that includes a substrate including a ceramic or a metal, and at least one layer of a corrosion resistant film formed on a surface of at least a region of the substrate to be exposed to plasma or a corrosive gas. The corrosion resistant film contains yttria as a main component and further contains at least one of tantalum and niobium in an amount of 0.02 mol % to 10 mol % in terms of pentoxide relative to the yttria, and a non-melted portion is not present in the corrosion resistant film. The method includes mixing a raw material powder of yttria with a raw material powder of at least one of a tantalum oxide and a niobium oxide, followed by granulating the raw material powders to obtain a granulated powder.


Patent
CoorsTek Inc. | Date: 2016-10-04

A compound semiconductor substrate according to the present invention includes a compound semiconductor layer formed on one main surface of a ground substrate via a seed layer, wherein the ground substrate is formed of a sintered body, the seed layer is formed of a single crystal, the compound semiconductor layer includes a structure having a buffer layer and an active layer that are sequentially crystal-grown on the seed layer, a thermal expansion coefficient of the sintered body is 0.7 times or more and 1.4 times or less an average thermal expansion coefficient of the entire compound semiconductor layer, and an FWHM of an X-ray diffraction peak of the buffer layer obtained by an X-ray diffraction rocking curve measurement is 800 arcsec or less.


The present invention relates to a fiber material for reinforcement containing a fiber aggregate containing plural fibers of a ceramic, a metal or a mixture thereof, and a porous structural body, in which the porous structural body fills a space among the plural fibers of the fiber aggregate, and covers at least a part of a surface of the fiber aggregate, and in which the porous structural body is in a state of being impregnated with a carbon material.


Patent
CoorsTek Inc. | Date: 2016-03-29

The present invention provides N-substituted glycinium bis(fluorosulfonyl)imide compounds and methods for producing and using the same. In particular, the N-substituted glycinium bis(fluorosulfonyl)imide compound is of the formula: wherein each of R^(1), R^(2 )and R^(3 )is independently selected from the group consisting of alkyl, aryl, aralkyl, cycloalkyl, (cycloalkyl)alkyl, heteroaryl, (heteroaryl)alkyl, heterocyclyl, and (heterocyclyl)alkyl; or R^(1 )and R^(2 )together with the nitrogen atom to which they are attached to form a nitrogen-heterocyclyl, or a nitrogen-heteroaryl.


The present invention provides an N-substituted glycinium (fluorosulfonyl)(trifluoromethylsulfonyl)imide compounds and methods for producing and using the same. In particular, the N-substituted glycinium (fluorosulfonyl)(trifluoromethylsulfonyl)imide compound is of the formula: wherein each of R^(1), R^(2 )and R^(3 )is independently selected from the group consisting of alkyl, aryl, aralkyl, cycloalkyl, (cycloalkyl)alkyl, heteroaryl, (heteroaryl)alkyl, heterocyclyl, and (heterocyclyl)alkyl; or R^(1 )and R^(2 )together with the nitrogen atom to which they are attached to form a nitrogen-heterocyclyl, or a nitrogen-heteroaryl.


Patent
CoorsTek Inc. | Date: 2016-03-29

A solution is formation of a nitride semiconductor layer on one principal plane of a single crystal substrate through a first layer. Upon selecting arbitrary three places in a radial direction from a cross section cleaved in a diameter portion and observing an interface between the first layer and the nitride semiconductor layer by taking a width of at least 500 nm in the radial direction, a value is within the range of 6 nm or more and 15 nm or less in a mean value of the three places with regard to a difference between a maximum height of a convex top portion and a minimum height of a concave bottom portion of the first layer in a thickness direction from the single crystal substrate toward the nitride semiconductor layer. A value is 10 nm or more and 25 nm or less in the mean value.


Patent
CoorsTek Inc. | Date: 2016-06-15

A wafer boat supporting a silicon wafer to be processed provides a sufficient anchor effect between a deposit film and a SiC coating film formed on a base material, and suppresses generation of particles due to peeling off of the deposit film. The vertical wafer boat includes a plurality of columns, being made of SiC-based material having a SiC coating film on a surface thereof, which contains shelf plate portions for supporting wafers, and a top plate and a bottom plate for fixing upper and lower ends of the columns, wherein a supporting plane which is in contact with an outer peripheral portion of the wafer is provided on an upper surface of the shelf plate portion, and a surface roughness Ra of a lower surface of the shelf plate increases toward a front side of the shelf plate portion from a rear side.


Patent
CoorsTek Inc. | Date: 2016-07-06

The present invention provides a nitride semiconductor substrate having an initial nitride and a nitride semiconductor sequentially stacked on one principal plane of a base substrate, wherein the nitride semiconductor substrate comprises recesses depressed from an interface between the base substrate and the initial nitride toward the base substrate along one arbitrary cross section; the recesses each have a diameter of 6 nm or more and 60 nm or less and are formed at a density of 310^(8 )pieces/cm^(2 )or more and 110^(11 )pieces/cm^(2 )or less; and the recess preferably has a depth of 3 nm or more and 45 nm or less from the interface between the base substrate and the initial nitride toward the base substrate.

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