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Guevara E.,Electronics and Mechatronics | Gonzalez F.J.,Coordinacion Para la Innovacion y Aplicacion de la Ciencia y la Tecnologia | Pedraza C.Z.,Institute Investigacion en Zonas Deserticas | Aguirre R.,Institute Investigacion en Zonas Deserticas | Juarez B.,Institute Investigacion en Zonas Deserticas
25th International Conference on Electronics, Communications and Computers, CONIELECOMP 2015 | Year: 2015

A fast method to discriminate between mezcal samples with different aging times was proposed using Raman spectroscopy and multivariate analysis techniques. The multivariate analysis were performed using Principal component analysis (PCA) and Partial least squares discriminant analysis (PLS-DA). The first principal component separates the matured aged mezcal (rested and aged) while the second principal component separates the non-matured from the matured mezcal. PLS-DA was chosen as supervised classifier to predict the belonging of unlabeled spectra to one of aging classes. The results demonstrated that Raman spectroscopy in combination with multivariate analysis could be used as fast method for discrimination between matured mezcal with different aging time. © 2015 IEEE. Source


Cruz-Hernandez E.,Coordinacion Para la Innovacion y Aplicacion de la Ciencia y la Tecnologia | Vazquez-Cortes D.,Coordinacion Para la Innovacion y Aplicacion de la Ciencia y la Tecnologia | Cisneros-De-La-Rosa A.,Coordinacion Para la Innovacion y Aplicacion de la Ciencia y la Tecnologia | Lopez-Luna E.,Coordinacion Para la Innovacion y Aplicacion de la Ciencia y la Tecnologia | And 2 more authors.
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | Year: 2012

The authors report a low-temperature photoluminescence (PL) study of multiple GaAs layers grown between AlAs(0.6 nm)/GaAs(0.6 nm) short-period superlattice barriers (SLBs) simultaneously grown on both GaAs(631)A and (100) substrates. Five GaAs-layers of different nominal thicknesses (LW, ranging from 12 to 2.4 nm) were grown by molecular beam epitaxy. By using (631)A-oriented substrates a self-organized and highly ordered corrugation is obtained in the growth of the GaAs layers, and at the end of the SLB growth, flat surfaces are found. Whereas, for the (100)-oriented sample, flat interfaces are confirmed after the growth of GaAs and SLB layers. By reducing L W below ∼3.6 nm in the (631) sample, strong quantum wire (QWR)-like confinement is achieved as deduced from polarized PL spectroscopy where polarization degrees as large as 0.43 are obtained. The PL emission energy of the (631)-QWRs is redshifted, as compared with the transitions of the (100)-oriented quantum wells, when LW is reduced. The authors explain this energy shift by the widening of the effective thickness of the confinement regions in the GaAs layers. © 2012 American Vacuum Society. Source


Espinoza-Figueroa J.A.,Coordinacion Para la Innovacion y Aplicacion de la Ciencia y la Tecnologia | Mendez-Garcia V.H.,Coordinacion Para la Innovacion y Aplicacion de la Ciencia y la Tecnologia | Vidal M.A.,Coordinacion Para la Innovacion y Aplicacion de la Ciencia y la Tecnologia | Cruz-Hernandez E.,Coordinacion Para la Innovacion y Aplicacion de la Ciencia y la Tecnologia | And 2 more authors.
Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics | Year: 2016

Ternary III-N-V semiconductor alloys are interesting and complex materials. GaNAs is one such material that has been studied extensively; however, the accurate determination of the N content within this material in which the growth conditions significantly increases the amount of interstitial N has not yet been reported. To address this problem, GaNAs layers (100 nm) were prepared using molecular beam epitaxy at temperatures between 400 and 600°C with a high nominal N concentration (3%). The N content was determined using high resolution x-ray diffraction (HRXRD), secondary ion mass spectrometry (SIMS), and low-temperature photoluminescence (PL). The N concentration determined using these techniques was compared. Additionally, the relationship between the growth temperature and N concentration is discussed. The incorporation of N into interstitial sites resulted in significant variations in the N content as estimated by SIMS, HRXRD, and PL. © 2016 American Vacuum Society. Source

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