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Han Y.-T.,Convergence Components and Material Research Laboratory | Han Y.-T.,Korea Advanced Institute of Science and Technology | Shin J.-U.,Convergence Components and Material Research Laboratory | Park S.-H.,Convergence Components and Material Research Laboratory | And 5 more authors.
ETRI Journal | Year: 2011

This letter presents a polymer 1×2 thermo-optic totalinternal- reflection digital optical switch (TIR-DOS) with an index contrast of 1.5%-Δ operating at low power consumption. The structure of our 1×2 TIR-DOS was created by adding a reflection port to that of a conventional multimode filtering variable optical attenuator. To improve the total-internalreflection efficiency, a heater offset was applied to the crossing region of multimode waveguides of the TIR-DOS. The fabricated 1×2 TIR-DOS shows a low electrical power consumption of 18 mW for an on-off ratio of 35 dB. © 2011 ETRI. Source


Kwon O.K.,Convergence Components and Material Research Laboratory | Leem Y.A.,Convergence Components and Material Research Laboratory | Lee C.W.,Convergence Components and Material Research Laboratory | Kim K.S.,Convergence Components and Material Research Laboratory | And 2 more authors.
Optics Express | Year: 2014

We report on a novel combination of measurement techniques for evaluating dimensional and compositional changes of selective-area-grown multiple-quantum-well laser diodes (SAG MQW LDs). This technique is based on C-V and I-V measurements of the fully fabricated LDs. Using this technique, the changes in the capacitance and voltage correspond to the layer thickness and bandgap energy. To verify the effectiveness of the proposed technique, we first fabricated an LD array containing ten different SAG MQW structures, and examined the effects of the dimensional and compositional changes on the wavelength shift both theoretically and experimentally. From our examination, we found that a wavelength shift of 83 nm is obtained for an SAG mask pattern with an opening width of 100 μm, and that a cross point between both dimensional and compositional changes exists for this mask pattern. As the following step, the fabricated LD array was tested using the proposed technique, and the growth rate enhancement and bandgap energy were extracted from the measured C-V and I-V results. The extracted data for each array channel were compared with the simulation results, which were well-fitted from the photo-luminescence (PL) measurements. They both show good agreement with the simulation results. ©2014 Optical Society of America. Source


Choi W.,Convergence Components and Material Research Laboratory | Choi W.,KAIST | Park Y.-S.,Convergence Components and Material Research Laboratory | Hyun Y.,Convergence Components and Material Research Laboratory | And 6 more authors.
Journal of Nanoscience and Nanotechnology | Year: 2013

We fabricated a thermoelectric device with a silicide/silicon laminated hetero-structure by using RF sputtering and rapid thermal annealing. The device was observed to have Ohmic characteristics by I-V measurement. The temperature differences and Seebeck coefficients of the proposed silicide/silicon laminated and bulk structure were measured. The laminated thermoelectric device shows suppression of heat flow from the hot to cold side. This is supported by the theory that the atomic mass difference between silicide and silicon creates a scattering center for phonons. The major impact of our work is that phonon transmission is suppressed at the interface between silicide and silicon without degrading electrical conductivity. The estimated thermal conductivity of the 3-layer laminated device is 1262±37 W/m K. Thus, by using the 3-layer laminated structure, thermal conductivity is reduced by around 16% compared to bulk silicon. However, the Seebeck coefficient of the thermoelectric device is degraded compared to that of bulk silicon. It is understood that electrical conductivity is improved by using silicide as a scattering center. Copyright © 2013 American Scientific Publishers All rights reserved. Source


Yoon S.-M.,Convergence Components and Material Research Laboratory | Yang S.,Convergence Components and Material Research Laboratory | Jung S.-W.,Convergence Components and Material Research Laboratory | Park S.-H.K.,Convergence Components and Material Research Laboratory | And 7 more authors.
Materials Research Society Symposium Proceedings | Year: 2011

An organic/inorganic hybrid-type nonvolatile memory TFT was proposed as a core device for the future flexible electronics. The structural feature of this memory TFT was that a ferroelectric copolymer and an oxide semiconductor layers were employed as a gate insulator and an active channel, respectively. The memory TFT with the structure of Au/poly(vinylidene fluoride-trifluoroethylene)/ Al 2O 3/ZnO/Ti/Au/Ti/poly(ethylene naphthalate) could be successfully fabricated at the process temperature of below 150°C. It was confirmed that the TFT well operated as a memory device even under the bending situations. © 2011 Materials Research Society. Source


Yoon S.-M.,Convergence Components and Material Research Laboratory | Yang S.,Convergence Components and Material Research Laboratory | Jung S.-W.,Convergence Components and Material Research Laboratory | Byun C.-W.,Convergence Components and Material Research Laboratory | And 9 more authors.
Applied Physics A: Materials Science and Processing | Year: 2011

Employment of the memristor for the next-generation large-area electronics can be expected to release various devices with interesting functions. In this article, for the first time we proposed a fully transparent memristor cell, which was composed of one-memory thinfilm transistor (TFT) and one-switch TFT using an oxide semiconducting active channel. A poly(vinylidene fluoridetrifluoroethylene) [P(VDF-TrFE)] was used as a gate insulator for the memory TFT and the channel conductance of the TFT was modulated by changing the quantity and direction of ferroelectric polarization. The fabrication procedures were designed so that the proposed transparent memristor cell could be implemented at process temperature below 200°C. It was successfully conformed that the fabricated memristor cell exhibited good TFT behaviors and modulated output characteristics programmed into the memory TFT. © Springer-Verlag 2011. Source

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