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Saint Petersburg, Russia

Lott J.A.,VI Systems | Maleev N.A.,RAS Ioffe Physical - Technical Institute | Kuzmenkov A.G.,Connector Optics LLC | Kulagina M.M.,RAS Ioffe Physical - Technical Institute | And 6 more authors.
Conference Digest - IEEE International Semiconductor Laser Conference | Year: 2010

We report planar vertical cavity surface emitting lasers with record 15 mW of continuous wave single transverse mode output power that employ spatially displaced multiple aperture and deep oxidation layers in a bottom emitting geometry. ©2010 IEEE. Source


Hybrid integration of vertical cavity surface emitting lasers (VCSELs) and/or other optical device components with silicon-based integrated circuits. A multitude of individual VCSELs or optical devices are processed on the surface of a compound semiconductor wafer and then transferred to a silicon-based integrated circuit. A sacrificial separation layer is employed between the optical components and the mother semiconductor substrate. The transfer of the optical components to a carrier substrate is followed by the elimination of the sacrificial or separation layer and simultaneous removal of the mother substrate. This is followed by the attachment and interconnection of the optical components to the surface of, or embedded within the upper layers of, an integrated circuit, followed by the release of the components from the carrier substrate.


Patent
CONNECTOR OPTICS Ltd | Date: 2010-07-01

A wavelength division multiplexing system has an array of wavelength-tunable lasers with at least two wavelength-tunable lasers emitting laser light at mutually different wavelengths, a first diffraction grating, an optical fiber, a second diffraction grating, and an array of photodetectors. The laser light emitted by the different wavelength-tunable lasers wavelengths impinges upon the first diffraction grating where it is reflected so as to impinge on an input end of the optical fiber. The light then propagates in the optical fiber and comes out from an output end of the optical fiber. Then the laser light having at least two different wavelengths further impinges on a second diffraction grating, whereupon it is reflected such that laser light having a first wavelength impinges on a first photodetector, and laser light having a second wavelength impinges on a second photodetector, which is different from the first photodetector.


Blokhin S.A.,RAS Ioffe Physical - Technical Institute | Bobrov M.A.,RAS Ioffe Physical - Technical Institute | Maleev N.A.,RAS Ioffe Physical - Technical Institute | Kuzmenkov A.G.,RAS Ioffe Physical - Technical Institute | And 7 more authors.
Semiconductors | Year: 2013

The effect of the level of internal and external optical losses on the dynamic characteristics of vertical-cavity surface-emitting lasers (VCSELs) in the spectral region of 850 nm is studied. It is shown that an increase in optical losses leads to a decrease in the speed of laser response and to the predominance of thermal effects, while a decrease in losses for the output of radiation brings about an increase in the response speed of the laser and the dominance of damping of the effective modulation frequency. Linear matrix emitters with the 1 × 4 format based on fast-response VCSEL with individual element addressing are produced and studied. Individual laser emitters with a current-aperture diameter of 5-7 μm provide lasing in the continuous-wave mode at room temperature in the region of 850 nm with threshold currents no higher than 0.5 mA, a differential efficiency no lower than 0.6 W/A, a modulation frequency as high as 20 GHz, and a MCEF factor of ∼10 GHz/mA1/2. © 2013 Pleiades Publishing, Ltd. Source


Kudryashov D.,Russian Academy of Sciences | Babichev A.,Saint Petersburg State University of Information Technologies, Mechanics and Optics | Nikitina E.,Russian Academy of Sciences | Gudovskikh A.,Russian Academy of Sciences | Kladko P.,Connector Optics LLC
Journal of Physics: Conference Series | Year: 2015

The photoluminescence (PL) of ZnO thin films grown by magnetron sputtering at room temperature has been observed. The PL spectra were measured using an instrument from Accent Optical Technologies with a solid state UV laser (λ = 266 nm) as the pumping source and at the temperature of 300 K. Samples grown at sputtering power of 100-200 W show a strong photoluminescence (PL) at wavelength of 377 nm and its intensity shows non-linear dependence with magnetron power. At values of sputtering power less then 100 W PL signal was not observed. A correlation between PL, XRD intensity and ZnO grain size was shown. Source

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