Comrat, Moldova

Comrat State University

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Comrat, Moldova

The Comrat State University in Moldavia is the successor of Gagauz National University, which has been founded by the decision of the Russian National Education Foundation and the Executive Committee of Comrat Regional Council of Deputies from February 11, 1991. By its Resolution the Government of Republic of Moldova gave it the status of State University in 2002.The university has 4 faculties: National Culture FacultyEconomic FacultyLaw FacultyAgricultural-Technological Faculty.In total there are 17 departments in the University providing training on 38 specialties, which meet the demands of region. There are as well two scientific centers, an Agro-ecological center, and a center of informational technologyThe university’s distinctive objectives is meeting the needs of the Republic of Moldova and Gagauzia especially in highly skilled professionals - university graduates All the students learn the Gagauz language, the official language of Gagauzia, in the Republic of Moldova, although almost all classes are taught in Russian language. The classes of the “Gagauz language and literature” specialty are taught in Gagauz; additionally, the course papers and final thesis papers are written in this language. The CSU organizes scientific conferences; the annual scientific conferences devoted to anniversaries of the university take place in January–February of each year. The Moldovan-Russian symposium is of a special significance.Doctorate studies are available in the fields of Gagauz Philology, Economics and Management at the University. The university contains 6 language and culture centers of a number of foreign countries. These have been created with the assistance of the German, UK, US, Turkish, Azerbaijan and Greek Embassies in Moldova.The university maintains wide international relations with the Balkan Universities Network and other Higher Education Institutions from Turkey, Bulgaria, Russia, Germany and China that provide the possibility of student and teaching staff exchange for the improvement of educational and scientific work. The university is actively involved in the international TEMPUS project. 2006 – project “Tempus” in collaboration with Swedish Royal University; as a result the Business - Informational Center was founded.2008 – the project “The connection of universities and businessmen” together with the Technical University of Moldova was implemented;2009 – in cooperation with German University of Koblenz-Landau the project on creation of the educational centre for administrative staff was carried out.Of great importance are the public lectures of the ambassadors accredited to the Republic Moldova in CSU.↑ Wikipedia.

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Sirkeli V.P.,TU Darmstadt | Sirkeli V.P.,Comrat State University | Yilmazoglu O.,TU Darmstadt | Kuppers F.,TU Darmstadt | Hartnagel H.L.,TU Darmstadt
Physica Status Solidi - Rapid Research Letters | Year: 2017

We identified conditions for room-temperature operation of terahertz quantum cascade lasers (THz QCLs) where variable barrier heights are used on ZnSe/Zn1–xMgx Se material systems. The THz QCL devices are based on three-level two-well design schemes. The THz QCL lasers with alternating quantum barriers with different heights were compared with THz QCL laser structures with fixed quantum barrier heights. It is found that the THz QCL device with novel design employing variable barrier heights achieved the terahertz emission of about 1.45 THz at room-temperature (300 K), and has improved laser performance due to the suppression of thermally activated carrier leakage via higher-energy parasitic levels. Thus, THz QCL devices employing the design with variable barrier heights may lead to future improvements of the operating temperature and performance of THz QCL lasers. (© 2016 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim). © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim


Sirkeli V.P.,TU Darmstadt | Sirkeli V.P.,Comrat State University | Yilmazoglu O.,TU Darmstadt | Al-Daffaie S.,TU Darmstadt | And 4 more authors.
Journal of Physics D: Applied Physics | Year: 2017

Blue InGaN/GaN light-emitting diodes with undoped, heavily Si-doped, Si delta-doped, heavily Mg-doped, Mg delta-doped, and Mg-Si pin-doped GaN barrier are investigated numerically. The simulation results demonstrate that the Mg-Si pin-doping in the GaN barrier effectively reduces the polarization-induced electric field between the InGaN well and the GaN barrier in the multiple quantum well, suppresses the quantum-confined Stark effect, and enhances the hole injection and electron confinement in the active region. For this light-emitting diode (LED) device structure, we found that the turn-on voltage is 2.8 V, peak light emission is at 415.3 nm, and internal quantum efficiency is 85.9% at 100 A cm-2. It is established that the LED device with Mg-Si pin-doping in the GaN barrier has significantly improved efficiency and optical output power performance, and lower efficiency droop up to 400 A cm-2 compared with LED device structures with undoped or Si(Mg)-doped GaN barrier. © 2016 IOP Publishing Ltd.


Sirkeli V.P.,TU Darmstadt | Sirkeli V.P.,Moldova State University | Sirkeli V.P.,Comrat State University | Yilmazoglu O.,TU Darmstadt | And 2 more authors.
Journal of Nanoelectronics and Optoelectronics | Year: 2014

We report on numerical investigations of p-GaN/n-ZnO light-emitting devices with p-NiO interlayer, and on LED design optimization which includes bandgap engineering, thickness and doping of constituent layers. The current-voltage dependences of investigated LEDs show a threshold voltage of 3.1 V and 5.4 V for the LED devices without and with presence of p-NiO interlayer, respectively. It is found that p-NiO layer act as electron blocking layer, that lead to the enhance of charge carriers confinement in active region, and to the increasing of internal quantum efficiency (IQE) of LED device up to 0.5%, that in four times higher in compare with that for original p-GaN/n-ZnO LED device. Copyright © 2014 American Scientific Publishers All rights reserved.


Sirkeli V.P.,Moldova State University | Sirkeli V.P.,Comrat State University | Nedeoglo D.D.,Moldova State University | Nedeoglo N.D.,Moldova State University | And 10 more authors.
Physica B: Condensed Matter | Year: 2012

Magnetic and photoluminescent properties of manganese-doped ZnSe crystals with different impurity concentrations were investigated. The concentration of Mn 2 ions in ZnSe crystals has been varied from 0.01 to 0.3 at%. Magnetic and photoluminescent studies have confirmed the introduction of Mn in ZnSe crystals. It was established that Mn 2 ions are responsible for the emission bands with maximum at 616 nm and 633 nm, which correspond to 4T 2→ 6A 1 and 4T 1→ 6A 1 intracentre transitions of Mn 2 ions respectively. It was found that the concentration quenching of the photoluminescent bands is associated with Mn 2 ions, which are due to the formation of Mn-Mn clusters. Magnetic properties studies have shown that at high doping levels the manganese atoms form Mn-Mn clusters in ZnSe. From the temperature dependence of magnetic susceptibility of ZnSe:Mn crystals that follows the Curie-Weiss law, it was possible to estimate the Curie-Weiss temperature Θ(x) and the effective Mn-Mn antiferromagnetic exchange constant (J 1). © 2012 Elsevier B.V. All rights reserved.


Biethan J.-P.,TU Darmstadt | Sirkeli V.P.,Moldova State University | Sirkeli V.P.,Comrat State University | Considine L.,TU Darmstadt | And 3 more authors.
Materials Science and Engineering B: Solid-State Materials for Advanced Technology | Year: 2012

ZnO nanostructures with a size ranging from 20 to 100 nm were successfully deposited on (1 0 0)-Si substrates at different temperatures (500-800°C) using MOCVD. It could be confirmed that the size of ZnO nanostructures decreased with increasing growth temperature. From photoluminescence (PL) studies it was found, that intensive band-edge PL of ZnO nanostructures consists of emission lines with maxima at 368.6 nm, 370.1 nm, 373.7 nm, 383.9 nm, 391.7 nm, 400.7 nm and 412 nm. These lines can be dedicated to free excitons and impurity donor-bound excitons, where hydrogen acts as donor impurity with an activation energy of about 65 meV. A UV shift of the band-edge PL line with increasing growth temperature of ZnO nanostructures was observed as a result of the quantum confinement effect. The results suggest that an increase of growth temperature leads to increased band-edge PL intensity. Moreover, the ratio of band-edge PL intensity to green- (red-) band intensity also increases, indicating better crystalline quality of ZnO nanostructures with increasing growth temperature. © 2012 Elsevier B.V. All rights reserved.


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