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Pasour J.,U.S. Navy | Wright E.,Beam Wave Research | Nguyen K.T.,Beam Wave Research | Balkcum A.,Communications and Power Industries Inc. | And 3 more authors.
IEEE Transactions on Electron Devices | Year: 2014

A technological breakthrough is embodied in the successful demonstration of an extended interaction klystron (EIK) amplifier, which has produced over 7.5 kW of peak output power at W-band (94 GHz). An efficiency of ~17 has been achieved with a depressed collector. The EIK is driven by a 20-kV, 4-A sheet beam in a permanent magnet solenoid, with 99% beam current transmission from gun to collector. Key features that contribute to the success of this device are: 1) tight beam focusing and correspondingly narrow beam tunnel, which are made possible by the solenoidal focusing and which provide high interaction impedance and high gain per unit length and 2) the incorporation of design elements to stabilize the inherently over-moded circuit. Measured performance agrees well with 3-D particle-in-cell simulations. © 1963-2012 IEEE. Source


Pershing D.E.,Beam Wave Research | Nguyen K.T.,Beam Wave Research | Abe D.K.,U.S. Navy | Wright E.,Beam Wave Research | And 8 more authors.
IEEE Transactions on Electron Devices | Year: 2014

A sheet-beam coupled-cavity traveling wave tube has produced over 10 kW of peak power at a center frequency of 34 GHz, with a 3-dB bandwidth of almost 5 GHz. The power of this amplifier is an order of magnitude higher than state-of-the-art conventional amplifiers of comparable frequency, bandwidth, and operating voltage (<20 kV). This unprecedented performance is made possible by a unique, Naval Research Laboratory (NRL)-developed sheet electron beam along with a novel slow-wave interaction structure. High-current, low-voltage operation provides high gain per unit length and allows an interaction structure <5-cm long to be used to achieve the desired gain of 15 dB at saturation. Measured performance agrees well with 3-D particle-in-cell simulations. © 1963-2012 IEEE. Source


Cook A.M.,U.S. Navy | Joye C.D.,U.S. Navy | Kimura T.,Communications and Power Industries Inc. | Wright E.L.,Beam-Wave Research, Inc. | Calame J.P.,U.S. Navy
IEEE Transactions on Electron Devices | Year: 2013

We present electromagnetic cold-test measurements of BeO ceramic pillbox vacuum windows for a 220-GHz traveling-wave tube amplifier. Transmission and reflection measurements show better than 20 dB return loss over a 25 GHz bandwidth, with band centers in the range of 212-225 GHz. We observe tuning of the window response as the circular waveguide length is changed. High-power testing is performed at 2.5 W, 100% duty at 218 GHz. © 1963-2012 IEEE. Source


Joye C.D.,U.S. Navy | Cook A.M.,U.S. Navy | Calame J.P.,U.S. Navy | Abe D.K.,U.S. Navy | And 8 more authors.
IEEE Transactions on Electron Devices | Year: 2014

We present the first vacuum electronic traveling wave amplifier to incorporate an interaction circuit fabricated by ultraviolet (UV) photolithography and electroforming, demonstrating over 60 W of output power at 214.5 GHz from a 12.1 kV, 118 mA electron beam. The tube also achieved an instantaneous bandwidth of ∼15 GHz in G-band in the small signal regime. The all-copper circuit was fabricated in two layers using a UV-transparent polymer monofilament embedded in the photoresist to form the beam tunnel prior to electroforming. Effects arising from fabrication errors and target tolerances are discussed. This microfabrication technique and demonstration paves the way for a new era of vacuum electron devices that could extend into the 1-2 THz range with advances in high-current-density electron guns. © 1963-2012 IEEE. Source


Balkcum A.,Communications and Power Industries Inc.
2010 IEEE International Vacuum Electronics Conference, IVEC 2010 | Year: 2010

Repair histories for over 1,000 klystrons of four fundamentally different design types and applications continue to be monitored. Statistical analysis of the failure data accumulated over nearly twenty years indicate mean time between failure values at the 90% confidence level ranging from 17 to 39 field service years for these devices. Comparison to the previous values indicates that the product lifetimes continue to improve. © 2010 IEEE. Source

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