Fang Z.,Institute of Microelectronics, Singapore |
Yu H.Y.,South University of Science and Technology of China |
Fan W.J.,Nanyang Technological University |
Ghibaudo G.,Institute Of Microelectronique |
And 6 more authors.
IEEE Transactions on Electron Devices | Year: 2013
A conduction model consisting of two parallel resistances from a highly conductive filament region and a uniform leakage oxide region is proposed in this brief to represent the current conduction in the filament-type switching resistive random access memory cell. Low-frequency noise analysis of current fluctuation at different resistance states has been employed to verify its efficiency. It is found that, in the low-resistance regime, filament resistance dominates current conduction and noise varies as a power law of resistance, whereas in the high-resistance regime, uniform oxide leakage is the major source of conduction, giving rise to a nearly constant noise level. © 1963-2012 IEEE. Source