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Uppsala, Sweden

Johansson T.,Linkoping University | Bengtsson O.,Ferdinand - Braun - Institute | Lotfi S.,Uppsala University | Vestling L.,Uppsala University | And 4 more authors.
European Microwave Week 2013, EuMW 2013 - Conference Proceedings; EuMIC 2013: 8th European Microwave Integrated Circuits Conference | Year: 2013

Generating high output power at radio frequencies in CMOS becomes more challenging as technology is scaled. Limitations mainly come from device design. We demonstrate the feasibility of an 10 V LDMOS device fabricated in 65 nm foundry CMOS technology with no added process steps or mask. DC, RF, and power characterization are presented which show the feasibility of the device. The LDMOS device is used in an integrated WLAN-PA design and 32.8 dBm linear output power in the 2.45 GHz band is achieved. Load-pull data also shows high output power capability at 5.8 GHz. The concept can also be used at 45 nm and 28 nm nodes in most foundry CMOS processes. © 2013 EuMA. Source


Olsson J.,Uppsala University | Vestling L.,Comheat Microwave AB | Eklund K.-H.,Comheat Microwave AB
EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon | Year: 2015

A new latch-free LIGBT on SOI is presented. The new device combines advantages from both LDMOS as well as LIGBT technologies; high breakdown voltage, high drive current density, low control voltages, at the same time eliminating latch-up problems. Breakdown voltage of over 200 V, on-state current density over 3 A/mm and latch-free operation is demonstrated. © 2015 IEEE. Source


Olsson J.,Uppsala University | Vestling L.,Comheat Microwave AB | Eklund K.-H.,Comheat Microwave AB
Solid-State Electronics | Year: 2016

A new latch-free LIGBT on SOI is presented. The new device combines advantages from both LDMOS as well as LIGBT technologies; high breakdown voltage, high drive current density, low control voltages, at the same time eliminating latch-up problems. The new LIGBT has the unique property of independent scaling of the input control device, i.e. LDMOS, and the output part of the device, i.e. the p-n-p part. This allows for additional freedom in designing and optimizing the device properties. Breakdown voltage of over 200 V, on-state current density over 3 A/mm, specific on-resistance below 190 mΩ mm2, and latch-free operation is demonstrated. © 2015 Elsevier Ltd. Source

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