COMET Inc

Ibaraki, Japan

COMET Inc

Ibaraki, Japan
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Suda M.,Hosei University | Ogawa M.,Hosei University | Otsuka K.,Hosei University | Nakamura K.,Hosei University | And 6 more authors.
Journal of the Electrochemical Society | Year: 2010

This research examines the metallorganic chemical vapor deposition process using tetrakis(3-methyl-3-pentoxy)cerium, Ce [OC (C2 H5) 2 CH3] 4, as a source material to prepare CeO2 films by two different mass spectrometric techniques: ionization by Li+ ion attachment and electron impact. The reaction by-products of (C 2 H5) 2 C CH2 and H2 O, respectively resulting from the pyrolysis of the source material and the dehydration reaction at the sticking of the precursor on the substrate surface, were detected as a result of the simple reaction integrated as Ce [OC (C 2 H5) 2 CH3] 4 → CeO2 +2 H2 O+4 (C2 H5) 2 C CH2. The deposition was controlled by two mechanisms: desorption of the adsorbate from the surface site with the activation energy (Ea) =0.85 eV and decomposition of the source material with that of Ea =0.29 eV. © 2009 The Electrochemical Society.


Kumagai K.,Hosei University | Yamaguchi K.,Hosei University | Hara K.,Hosei University | Suzuki S.,Comet Inc. | And 2 more authors.
ECS Transactions | Year: 2016

Praseodymium oxide thin films were fabricated on p-type Si (100) substrates by reactive RF magnetron sputtering with a metal Pr target in Ar + 10 % O2. Deposited films were post-annealed in a nitrogen ambient for 30 minutes at 300, 500 and 800 °C. The XRD measurement revealed that the as-deposited Pr oxide film was crystalized and the dominant diffraction line of cubic PrO2 was maintained up to 500 °C. After annealing at 800 °C, the new diffraction line indicating the phase transition to hexagonal Pr2O3 appeared. The XTEM observation revealed that the SiO2 layer present at the interface between the film and the Si substrate in the as-deposited sample was scavenged during the post-annealing up to 500 °C. After annealing at 800 °C, the Pr oxide film had the three-layered structure: the columnar crystal layer, the crystalline grain layer, and the amorphous silicate layer from the surface. © 2016 The Electrochemical Society.


Konishi J.,Hosei University | Ohsawa T.,Hosei University | Suzuki S.,Comet Inc. | Ishibashi K.,Comet Inc. | And 3 more authors.
ECS Transactions | Year: 2016

The Al2O3 incorporated CeO2 thin films (Al2O3 molar fraction of 0.0 to 0.6) were prepared by the RF magnetron sputtering with the combinatorial mask system using the two targets of Al2O3 and CeO2 in Ar + 10% O2. The deposited films were annealed in N2 and O2 at 500°C for 30 minutes. The minimum leakage current density of 1.6 x 10-8 A/cm2 measured at the electric field of 1MV/cm was obtained for the N2 annealed sample with the Al2O3 incorporation of 0.2. The obtained value was significantly lower than that of the film without the Al2O3 incorporation by two orders of magnitude. The variation of the flat band voltage with the incorporated Al2O3 molar fraction suggested the generation of the fixed positive charge, which arose probably from the lower Ce oxide in the film and/or the lower oxide of Si diffused from the substrate into the film. © 2016 The Electrochemical Society.


Nguyen N.T.,Japan National Institute of Materials Science | Ri S.-G.,COMET Inc. | Nagata T.,Japan National Institute of Materials Science | Ishibashi K.,COMET Inc. | And 4 more authors.
Applied Physics Express | Year: 2014

Nonpolar a-plane ZnO-film and n-ZnO/i-ZnO/p-GaN heterostructure LEDs were grown epitaxially by pulsed laser deposition and metal-organic chemical vapor deposition on Si(001) using AlN and MnS as buffer layers. X-ray diffraction pole figures showed an epitaxial relationship of ZnO(112̄0) ∥ AlN(112̄0) ∥ MnS(001) ∥ Si(001). A near band-edge emission from ZnO was observed at 378nm in photoluminescence measurements. Electroluminescence of nonpolar n-ZnO/i-ZnO/p-GaN LEDs displayed UV emission at 390nm under forward and reverse bias. Successful growth of nonpolar n-ZnO/i-ZnO/p-GaN heteroepitaxial on Si provides an attractive solution for integrating nonpolar ZnO-based optoelectronic devices with Si substrates for various applications. © 2014 The Japan Society of Applied Physics.


Patent
Comet Corporation and Tokai University | Date: 2012-08-29

A method and an apparatus capable of selectively damaging and killing tumor cells includes a step of irradiating tumor cells with a UV pulse flash having continuous emission spectra ranging at least from 230 to 270 nm, outside a living body of a human or a living body of a non-human animal or in a living body of a non-human animal. The UV pulse flash may have an accumulated irradiation amount per unit area that is achieved at a distance of 8 cm from a light source having an integrated output of, for example, 90, 180-7100 or 14200 J.


Patent
Comet Corporation and Tokai University | Date: 2010-09-09

A method and an apparatus capable of selectively damaging and killing tumor cells includes a step of irradiating tumor cells with a UV pulse flash having continuous emission spectra ranging at least from 230 to 270 nm, outside a living body of a human or a living body of a non-human animal or in a living body of a non-human animal. The UV pulse flash may have an accumulated irradiation amount per unit area that is achieved at a distance of 8 cm from a light source having an integrated output of, for example, 90, 180-7100 or 14200 J.


Patent
Tokai University and Comet Corporation | Date: 2012-05-02

It is an object of the present invention to provide a method and an apparatus capable of selectively damaging and killing tumor cells. In one aspect of the present invention, there is provided a method for selectively damaging and killing tumor cells comprising a step of irradiating tumor cells with a pulse light having continuous emission spectra ranging at least from 230 to 270 nm (UV pulse flash), outside a living body of a human or a living body of a non-human animal or in a living body of a non-human animal. The UV pulse flash, preferably, has an accumulated irradiation amount per unit area that is achieved at a distance of 8 cm from a light source having an integrated output of, for example, 90, 180-7100 or 14200 J. In other words, the UV pulse flash, preferably, has an accumulated irradiation amount per unit area of, for example, 6, 12-480 or 960 J/cm^(2) in terms of an energy originated from a wavelength of UVC. The step of irradiating with the UV pulse flash is preferably carried out, for example, within 1 minute. The UV pulse flash is preferably emitted from a xenon flash lamp. As another aspect of the present invention, there is provided an apparatus for treating tumor tissues comprising a light source of the UV pulse flash.


Pulsed xenon (Xe) flash without any photoreactive compounds has been shown to inactivate a type of bacteria spiked into platelet (PLT) suspension in plasma, but enhanced the PLT storage lesion (PSL). Predicting reduction of PSL with increasing bactericidal ability, pulsed Xe flash was filtered through a band-stop filter, which excluded ultraviolet (UV)A, UVB, and visible light.Apheresis PLT concentrates (PCs) inoculated with bacteria were irradiated with filtered Xe flash (fXe treatment). For in vitro functional quality assessment, PLT aggregation and thrombin generation together with other assays that monitor the PSL were investigated.Staphylococcus aureus and Streptococcus dysgalactiae could be inactivated without regrowth during 6 days of storage. PC variables, such as PLT count, concentrations of soluble CD40 ligand, and ratio of aggregated PLTs, were not significantly different between fXe-treated and untreated PCs after 6 days of storage, while PAC-1 binding increased in the fXe-treated PLTs. Responsiveness of fXe-treated PLTs to ADP was maintained over a 6-day storage period as shown by the up regulation of P-selectin expression and induction of both integrin IIb3 conformational change and PLT aggregation. The fXe-treated PLTs showed a sustained aggregation curve in response to ADP, whereas untreated PLTs transiently aggregated and then subsequently dissociated. Thrombin-generating kinetics of fXe-treated PLTs via PLT membrane surface were equivalent to those of untreated PLTs.The fXe treatment inactivated bacteria in apheresis PCs in plasma without additional chemical compounds. The fXe-treated PCs retained acceptable in vitro properties of PC quality and PLT functionality.


Trademark
Comet Inc. | Date: 2011-07-18

keyboard replacement software.


Trademark
Comet Inc. | Date: 2011-07-18

specialized software applications for mobile and social platforms.

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