Montpellier, France
Montpellier, France

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Taliercio T.,CNRS Electronic Systems Institute | Guilengui V.N.,CNRS Electronic Systems Institute | Cerutti L.,CNRS Electronic Systems Institute | Tournie E.,CNRS Electronic Systems Institute | Greffet J.-J.,University Paris - Sud
Optics Express | Year: 2014

We investigate highly-doped InAsSb layers lattice matched onto GaSb substrates by angular-dependent reflectance. A resonant dip is evidenced near the plasma frequency of thin layers. Based on Fresnel coefficient in the case of transverse electromagnetic wave, we interpret this resonance as due to the excitation of a leaky electromagnetic mode, the Brewster "mode", propagating in the metallic layer deposited on a dielectric material. Potential interest of this mode for in situ monitoring during device fabrication is also discussed. ©2014 Optical Society of America.


Chusseau L.,CNRS Electronic Systems Institute | Philippe F.,CNRS Montpellier Laboratory of Informatics, Robotics and Microelectronics | Disanto F.,CNRS Electronic Systems Institute | Disanto F.,CNRS Montpellier Laboratory of Informatics, Robotics and Microelectronics
Optics Express | Year: 2014

Monte Carlo markovian models of a dual-mode semiconductor laser with quantum well (QW) or quantum dot (QD) active regions are proposed. Accounting for carriers and photons as particles that may exchange energy in the course of time allows an ab initio description of laser dynamics such as the mode competition and intrinsic laser noise. We used these models to evaluate the stability of the dual-mode regime when laser characteristics are varied: mode gains and losses, non-radiative recombination rates, intraband relaxation time, capture time in QD, transfer of excitation between QD via the wetting layer... As a major result, a possible steady-state dual-mode regime is predicted for specially designed QD semiconductor lasers thereby acting as a CW microwave or terahertzbeating source whereas it does not occur for QW lasers. © 2014 Optical Society of America.


Gassenq A.,Ghent University | Gencarelli F.,IMEC | Van Campenhout J.,IMEC | Shimura Y.,IMEC | And 4 more authors.
Optics Express | Year: 2012

A surface-illuminated photoconductive detector based on Ge0.91Sn0.09 quantum wells with Ge barriers grown on a silicon substrate is demonstrated. Photodetection up to 2.2ìm is achieved with a responsivity of 0.1 A/W for 5V bias. The spectral absorption characteristics are analyzed as a function of the GeSn/Ge heterostructure parameters. This work demonstrates that GeSn/Ge heterostructures can be used to developed SOI waveguide integrated photodetectors for short-wave infrared applications. © 2012 Optical Society of America.


Gassenq A.,Ghent University | Hattasan N.,Ghent University | Cerutti L.,CNRS Electronic Systems Institute | Rodriguez J.B.,CNRS Electronic Systems Institute | And 2 more authors.
Optics Express | Year: 2012

In this paper we present GaInAsSb photodiodes heterogeneously integrated on SOI by BCB adhesive bonding for operation in the short-wave infrared wavelength region. Photodiodes using evanescent coupling between the silicon waveguide and the III-V structure are presented, showing a room temperature responsivity of 1.4A/W at 2.3μm. Photodiode structures using a diffraction grating to couple from the silicon waveguide layer to the integrated photodiode are reported, showing a responsivity of 0.4A/W at 2.2μm. © 2012 Optical Society of America.


Rodriguez J.B.,CNRS Electronic Systems Institute | Cervera C.,CNRS Electronic Systems Institute | Christol P.,CNRS Electronic Systems Institute
Applied Physics Letters | Year: 2010

We present a type-II superlattice period with a modified InAs to GaSb thickness ratio for midinfrared detection. In this kind of structure, the large electron-hole wave-function overlap and the low intrinsic carrier concentration lead to a significant signal-to-noise ratio enhancement. For the proof of concept, a sample designed with an InAs to GaSb thickness ratio close to 2 was grown. Comparison with standard design photodiodes shows an improvement of the differential resistance area product by one and a half decade while the quantum efficiency was more than doubled. © 2010 American Institute of Physics.


Jahjah M.,CNRS Electronic Systems Institute | Vicet A.,CNRS Electronic Systems Institute | Rouillard Y.,CNRS Electronic Systems Institute
Applied Physics B: Lasers and Optics | Year: 2012

A methane sensor based on quartz-enhanced photoacoustic spectroscopy was developed. An antimonide quantum-well diode laser was used as an excitation source. The GaInAsSb/AlGaAsSb laser was fabricated by molecular beam epitaxy on GaSb substrate. This diode laser emits in the 2.35 μm range at room temperature in the continuous wave regime. A spectrophone constituted of a quartz tuning fork and two steel microresonators was used. The analysis of the sensor response with one, two or without microresonators is presented. Second derivative wavelength modulation detection was used to perform low concentrations measurements, thus we obtained a CH 4 detection limit of 1 ppmv. © Springer-Verlag 2011.


Reboul J.R.,CNRS Electronic Systems Institute | Cerutti L.,CNRS Electronic Systems Institute | Rodriguez J.B.,CNRS Electronic Systems Institute | Grech P.,CNRS Electronic Systems Institute | Tourni E.,CNRS Electronic Systems Institute
Applied Physics Letters | Year: 2011

We have investigated specifically designed GaSb-based laser diodes epitaxially grown on a Si substrate. We demonstrate continuous-wave operation of these laser diodes emitting near 2 m up to 35°C with several mW/facet output powers, limited by our experimental setup. Our results open the way to direct monolithic III-V/Si integration. © 2011 American Institute of Physics.


Bahriz M.,CNRS Electronic Systems Institute | Lollia G.,CNRS Electronic Systems Institute | Baranov A.N.,CNRS Electronic Systems Institute | Teissier R.,CNRS Electronic Systems Institute
Optics Express | Year: 2015

We demonstrate the high temperature operation, up to 80°C, of quantum cascade lasers emitting at a wavelength of 20 μm. The lasers are based on the InAs/AlSb materials and take benefit of a low loss plasmonenhanced dielectric waveguide. The waveguide consists of doped InAs cladding layers and low-doped InAs spacers. For 2.9-mm-long devices, the threshold current density is 4.3 kA/cm2 and the measured peak output power is 7 mW at room temperature. The cavity length dependence of the threshold currents also indicates that very large optical gain is achieved and effectively overcome the strong free carrier absorption. © 2015 Optical Society of America.


Triki M.,CNRS Electronic Systems Institute | Nguyen Ba T.,CNRS Electronic Systems Institute | Vicet A.,CNRS Electronic Systems Institute
Infrared Physics and Technology | Year: 2015

A compact system for methane sensing based on the Quartz-Enhanced Photoacoustic Spectroscopy technique has been developed. This development has been taken through two versions which were based respectively on a Fabry Perot quantum wells diode laser emitting at 2.3 μm, and on a quantum wells distributed feedback diode laser emitting at 3.26 μm. These lasers emit near room temperature in the continuous wave regime. A spectrophone consisting of a quartz tuning fork and one steel microresonator was used. Second derivative wavelength modulation detection was used to perform low methane concentration measurements. The sensitivity and the linearity of the QEPAS sensor were studied. A normalized noise equivalent absorption coefficient of 7.26 × 10-6 cm-1 W/Hz1/2 was achieved. This corresponds to a detection limit of 15 ppmv for 12 s acquisition time. © 2015 Elsevier B.V. All rights reserved.


Taalat R.,CNRS Electronic Systems Institute | Rodriguez J.-B.,CNRS Electronic Systems Institute | Delmas M.,CNRS Electronic Systems Institute | Christol P.,CNRS Electronic Systems Institute
Journal of Physics D: Applied Physics | Year: 2014

In this paper, the electro-optical properties of InAs/GaSb superlattice (SL) midwave infrared photodiodes with different periods were investigated. Three devices with different SL periods, but the same cut-off wavelength at 5 m at 77 K, were grown by molecular beam epitaxy on p-type GaSb substrates. The optical and electrical behaviours were characterized and analysed. Our investigations show strong influence of the SL composition on both the material properties and photodetector performances, such as the background doping concentration, shape of the response spectra and the dark current behaviours. © 2014 IOP Publishing Ltd.

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