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Montpellier, France

Chusseau L.,CNRS Electronic Systems Institute | Philippe F.,CNRS Montpellier Laboratory of Informatics, Robotics and Microelectronics | Disanto F.,CNRS Electronic Systems Institute | Disanto F.,CNRS Montpellier Laboratory of Informatics, Robotics and Microelectronics
Optics Express | Year: 2014

Monte Carlo markovian models of a dual-mode semiconductor laser with quantum well (QW) or quantum dot (QD) active regions are proposed. Accounting for carriers and photons as particles that may exchange energy in the course of time allows an ab initio description of laser dynamics such as the mode competition and intrinsic laser noise. We used these models to evaluate the stability of the dual-mode regime when laser characteristics are varied: mode gains and losses, non-radiative recombination rates, intraband relaxation time, capture time in QD, transfer of excitation between QD via the wetting layer... As a major result, a possible steady-state dual-mode regime is predicted for specially designed QD semiconductor lasers thereby acting as a CW microwave or terahertzbeating source whereas it does not occur for QW lasers. © 2014 Optical Society of America. Source


Chusseau L.,CNRS Electronic Systems Institute | Guillet J.-P.,CNRS Electronic Systems Institute
Journal of Infrared, Millimeter, and Terahertz Waves | Year: 2012

The coupling between a linearly-polarized gaussian beam and a Sommerfeld wave propagating on a circular metallic wire is obtained owing to a differential phase element inserted in front of the metal wire. At millimeterwavelengths we calculate a theoretical maximum coupling efficiency of 32% for this system in spite of the metal nature and radius in the range of a few hundreds of microns. A detailed experimental study of 100 and 300 GHz Sommerfeld waves propagating on stainless steel and tungsten wires is reported. The measured field at any distance from the wire compares well with theoretical predictions. © Springer Science+Business Media, LLC 2011. Source


Gassenq A.,Ghent University | Gencarelli F.,IMEC | Van Campenhout J.,IMEC | Shimura Y.,IMEC | And 4 more authors.
Optics Express | Year: 2012

A surface-illuminated photoconductive detector based on Ge0.91Sn0.09 quantum wells with Ge barriers grown on a silicon substrate is demonstrated. Photodetection up to 2.2ìm is achieved with a responsivity of 0.1 A/W for 5V bias. The spectral absorption characteristics are analyzed as a function of the GeSn/Ge heterostructure parameters. This work demonstrates that GeSn/Ge heterostructures can be used to developed SOI waveguide integrated photodetectors for short-wave infrared applications. © 2012 Optical Society of America. Source


Rodriguez J.B.,CNRS Electronic Systems Institute | Cervera C.,CNRS Electronic Systems Institute | Christol P.,CNRS Electronic Systems Institute
Applied Physics Letters | Year: 2010

We present a type-II superlattice period with a modified InAs to GaSb thickness ratio for midinfrared detection. In this kind of structure, the large electron-hole wave-function overlap and the low intrinsic carrier concentration lead to a significant signal-to-noise ratio enhancement. For the proof of concept, a sample designed with an InAs to GaSb thickness ratio close to 2 was grown. Comparison with standard design photodiodes shows an improvement of the differential resistance area product by one and a half decade while the quantum efficiency was more than doubled. © 2010 American Institute of Physics. Source


Taliercio T.,CNRS Electronic Systems Institute | Guilengui V.N.,CNRS Electronic Systems Institute | Cerutti L.,CNRS Electronic Systems Institute | Tournie E.,CNRS Electronic Systems Institute | Greffet J.-J.,University Paris - Sud
Optics Express | Year: 2014

We investigate highly-doped InAsSb layers lattice matched onto GaSb substrates by angular-dependent reflectance. A resonant dip is evidenced near the plasma frequency of thin layers. Based on Fresnel coefficient in the case of transverse electromagnetic wave, we interpret this resonance as due to the excitation of a leaky electromagnetic mode, the Brewster "mode", propagating in the metallic layer deposited on a dielectric material. Potential interest of this mode for in situ monitoring during device fabrication is also discussed. ©2014 Optical Society of America. Source

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