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Shizuishan, China

Li F.-C.,CNMC Ningxia Orient Group Co.
Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices | Year: 2012

In this paper is Graphite material Tantalum electrolytic capacitors The manganese dioxide cathode layer Coating use as background Respectively discuss Different graphite solid content of the sample data capacity contrast Curing temperature, etc. Under the experimental conditions Graphite material Tantalum electrolytic capacitors Electrical parameters of the contrast between the impact The test results show that: Graphite solids content 5.0±X%, Curing temperature 165±y°C/45 min is Graphite as the cathode material used in the top coating process conditions Sample electrical parameters improved significantly And the use of the process as a cathode material The graphite solution PH value size is very important and Affect Tremendous PH value of about 11 to 13 use the ideal parameters.

Zhang Z.,Kunming University | Zhang Z.,Key Laboratory of Advance Materials of Yunnan Province | Zhang Z.,Key Laboratory of Advanced Materials of Precious Nonferrous Metals | Gan G.,Kunming University | And 15 more authors.
Key Engineering Materials | Year: 2012

To understand the atomic structure and electronic properties of Cr atom adsorbed on polar ZnO surfaces, a theoretical study is carried out by means of first-principles calculations based on density functional theory. The results show different characteristic with the different adsorption sites for Cr. The Cr atom adsorbed at the site on top of O forms a strong ionic bond with O atom, with electrons transferred to O. While for the Cr atom adsorbed at the hcp-hollow site on Zn-terminated surface, it forms a metallic bond with the surface Zn atom, which exhibits a free-electron-like behavior. The adsorbed atoms could not effect more atoms in ZnO due to a strong screening of ZnO to the outside metal, so the character of adsorption surfaces is only decided by the atoms near the surface. © (2012) Trans Tech Publications.

Zhong J.,CNMC Ningxia Orient Group Co. | Zhou X.,Ningxia Orient Tantalum Industry Co. | Zhao G.,Ningxia Orient Tantalum Industry Co. | Yang G.,Ningxia Orient Tantalum Industry Co.
Xiyou Jinshu/Chinese Journal of Rare Metals | Year: 2016

The high-temperature oxidation resistance coatings were prepared by slurry firing on the surface of Nb-W alloy which was used in the field of aerospace engine.The fracture of the coating and the morphology of the sprayed layer were investigated by scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) spectroscopy. The forming reason of surface defects, color difference and the influence of color difference of coatings on their properties and surfaces in high-temperature aerobic environment were researched based on the above analyses. It was found that the color-different coating was the result of outer silicide enrichment. By the research on the coatings which had color difference, it was found that the color difference appeared due to excess slurry. The excess slurry generated silicide and the silicide enriched on the surface coating. The coating formed grains different from those of normal coating, resulting in the color difference, but the color difference had no effect on its performance, overall thickness and surface quality. It existed on the surface of the coating without changing the structure and composition of other levels. High temperature oxygen atmosphere test found that there was no difference of high temperature properties for coatings with or without color difference, which indicated that color difference did not change the high temperature properties of the coatings. © Editorial Office of Chinese Journal of Rare Metals. All right reserved.

He J.,CNMC Ningxia Orient Group Co. | Zhang X.,Ningxia Orient Tantalum Industry Co. | Yang G.,Ningxia Orient Tantalum Industry Co. | Zheng A.,Ningxia Orient Tantalum Industry Co.
Materials China | Year: 2014

This paper cites the characteristics of tantalum capacitors, applications and application characteristics of aluminum capacitors and multilayer ceramic capacitors. It analyzes the new trends that the chip-based and miniaturization tantalum capacitors led capacitor grade tantalum powder to higher capacity. It describes the challenges of the demand for high reliability in high-voltage tantalum powder of aviation, aerospace and military field voltage capacitor to a higher voltage and lower ESR direction. It reviews the application development process of the capacitor tantalum powder with high capacitance tantalum powder, high voltage tantalum powder and medium voltage (flake) tantalum powder. It analyzes the performance, product grades and key technologies of high capacitance tantalum powder, high voltage tantalum powder and medium voltage(flake) tantalum powder by methods of the classical methods of potassium tantalum fluoride (K2TaF7) sodium metal reduction, electron beam melting and ball milled production. For 30~80 kμFV/g tantalum powder, the influence factors of withstand voltage performance have been analyzed. Finally, it presents new technologies, devices, products morphology, performance, advantages and disadvantages of the high capacitance tantalum powder and high voltage technology. On the basis of capacitor grade tantalum powder, this paper points out sustainable development ideas of higher capacitance and higher voltage for tantalum capacitors. ©, 2014, Materials China. All right reserved.

Li C.,Xian University of Technology | Li C.,CNMC Ningxia Orient Group Co. | Wang F.,Xian University of Technology | Wang F.,CNMC Ningxia Orient Group Co. | And 2 more authors.
Materials China | Year: 2013

In recent years, some researchers have carried out many studies on Al doped ZnO thin films with additive elements and found that the properties of AZO thin films with additive elements are better than those of AZO thin films. The research achievements mentioned above are summarized and the basic structure and optoelectronic properties of AZO thin films are introduced. The basic structure and optoelectronic properties of AZO thin films with additive elements are described and compared with those of AZO thin films. The main preparation technology and advancement of additive elements doped AZO thin films are reported and the developments and the research trends of additive elements doped AZO thin films are prospected. The three main technologies of magnetron sputtering, sol AZO film additive elements mixed into the gel and pulsed laser deposition technique and its advantages and disadvantages are summarised, and the research progress of different methods of AZO thin film doped with the elements are expounded. Finally, the authours introduce the application of AZO thin film doped additive elements in the field of optoelectronics, the prospect of its future development and research trend.

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