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Zaporizhia, Ukraine

Gorbenko V.I.,Classical Private University
ECS Transactions | Year: 2013

The ab initio methods of GAMESS package have been used to calculate the adsorption and the surface diffusion properties of H, O and C adatoms on graphene sheet. The graphene sheet was presented by cluster model with hydrogen atoms on perimeter. The potential-energy profiles of interaction of the adatoms with graphene have been obtained. The essential difference of the profiles and the energy barriers has been found for all adsorbate species. © The Electrochemical Society. Source


Ivanov V.M.,Classical Private University | Trubitsin Yu.V.,Classical Private University
Russian Microelectronics | Year: 2011

A review of approaches to hydrogenation of silicon tetrachloride is presented. A byproduct of po- lysilicon manufacture, silicon tetrachloride is thus converted into trichlorosilane, which is then recycled to reduce the production cost of polysilicon. Catalytic hydrogenation is identified as the most commercially promising line of research and development. © Pleiades Publishing, Ltd., 2011. Source


Talanin V.I.,Classical Private University | Talanin I.E.,Classical Private University
Crystallography Reports | Year: 2010

A new alternative model of the formation and transformation of grown-in microdefects in dislocation-free silicon single crystals is proposed. The basic concepts of the alternative mathematical model of the formation of secondary grown-in microdefects are considered. It is shown that vacancy micropores are formed in a narrow temperature range of 1130-1070°C. This is caused by a sharp decrease in the concentration of background impurity which does not form agglomerates (they arise in the temperature range of 1420- 1150°C upon crystal cooling). © Pleiades Publishing, Inc., 2010. Source


Talanin V.I.,Classical Private University | Talanin I.E.,Classical Private University
Physics of the Solid State | Year: 2010

The defect structure of dislocation-free silicon single crystals has been calculated using the approximate solution of the Fokker-Planck partial differential equations. It has been demonstrated that the precipitation starts to occur near the crystallization front due to the disappearance of excess intrinsic point defects on sinks whose role is played by oxygen and carbon impurities. © 2010 Pleiades Publishing, Ltd. Source


Talanin V.I.,Classical Private University | Talanin I.E.,Classical Private University
Physics of the Solid State | Year: 2011

A kinetic model of growth and coalescence of oxygen and carbon precipitates has been proposed. This model in combination with the kinetic model of the formation of oxygen and carbon precipitates represents a unified model of precipitation in as-grown dislocation-free silicon single crystals during their cooling in the temperature range from 1683 to 300 K. It has been demonstrated that the results of the calculations are in good agreement with the experimental data obtained from investigations of grown-in microdefects. © 2011 Pleiades Publishing, Ltd. Source

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