CJSC Superconducting Nanotechnology Scontel

Moscow, Russia

CJSC Superconducting Nanotechnology Scontel

Moscow, Russia
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Seleznev V.A.,Moscow State Pedagogical University | Divochiy A.V.,Moscow State Pedagogical University | Vakhtomin Y.B.,Moscow State Pedagogical University | Morozov P.V.,CJSC Superconducting Nanotechnology Scontel | And 5 more authors.
Journal of Physics: Conference Series | Year: 2016

We have developed the deposition technology of WSi thin films 4 to 9 nm thick with high temperature values of superconducting transition (Tc∼4 K). Based on deposed films there were produced nanostructures with indicative planar sizes ∼100 nm, and the research revealed that even on nanoscale the films possess of high critical temperature values of the superconducting transition (Tc∼3.3-3.7 K) which certifies high quality and homogeneity of the films created. The first experiments on creating superconducting single-photon detectors showed that the detectors' SDE (system detection efficiency) with increasing bias current (I b) reaches a constant value of ∼30% (for X=1.55 micron) defined by infrared radiation absorption by the superconducting structure. To enhance radiation absorption by the superconductor there were created detectors with cavity structures which demonstrated a practically constant value of quantum efficiency >65% for bias currents Ib>0.6-Ic. The minimal dark counts level (DC) made 1 s-1 limited with background noise. Hence WSi is the most promising material for creating single-photon detectors with record SDE/DC ratio and noise equivalent power (NEP). © Published under licence by IOP Publishing Ltd.


Smirnov K.V.,National Research University Higher School of Economics | Divochiy A.V.,CJSC Superconducting Nanotechnology Scontel | Vakhtomin Y.B.,Moscow State Pedagogical University | Sidorova M.V.,Moscow State Pedagogical University | And 5 more authors.
Applied Physics Letters | Year: 2016

We have found experimentally that the rise time of voltage pulse in NbN superconducting single photon detectors increases nonlinearly with increasing the length of the detector L. The effect is connected with dependence of resistance of the detector Rn, which appears after photon absorption, on its kinetic inductance Lk and, hence, on the length of the detector. This conclusion is confirmed by our calculations in the framework of two temperature model. © 2016 Author(s).


Korneev A.A.,Moscow State Pedagogical University | Korneeva Y.P.,Moscow State Pedagogical University | Mikhailov M.Y.,Ukrainian Academy of Sciences | Pershin Y.P.,Kharkiv Polytechnic Institute | And 8 more authors.
IEEE Transactions on Applied Superconductivity | Year: 2015

We investigate the response mechanism of nanowire superconducting single-photon detectors (SSPDs) made of amorphous MoxSi1-x. We study the dependence of photon count and dark count rates on bias current in magnetic fields up to 113 mT at 1.7 K temperature. The observed behavior of photon counts is similar to the one recently observed in NbN SSPDs. Our results show that the detecting mechanism of relatively high-energy photons does not involve the vortex penetration from the edges of the film, and on the contrary, the detecting mechanism of low-energy photons probably involves the vortex penetration from the film edges. © 2014 IEEE.


Sidorova M.V.,Moscow State Pedagogical University | Divochiy A.,CJSC Superconducting Nanotechnology Scontel | Vachtomin Y.B.,CJSC Superconducting Nanotechnology Scontel | Smirnov K.V.,National Research University Higher School of Economics
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2015

We present an ultrafast NbN Superconducting single-photon detector (SSPD) with active area of 3x3 1/4m2, which reveals better timing performances than a previously developed SSPD with active area of 10x10 1/4m2. The improved SSPD demonstrates the record timing jitter <25 ps, ultra short recovery time <2 ns, extremely low dark counts level, and high detection efficiency (DE) in a wide spectral range from visible to near-infrared. The record parameters were obtained thanks to the development of a new technique of an effective optical coupling between a detector with reduced-size active area and a standard single-mode telecommunication fiber. The advantages of a new approach are experimentally confirmed by performed electro-optical measurements of the device performances. © 2015 COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.


Smirnov K.,National Research University Higher School of Economics | Vachtomin Y.,Moscow State Pedagogical University | Divochiy A.,CJSC Superconducting Nanotechnology Scontel | Antipov A.,CJSC Superconducting Nanotechnology Scontel | Goltsman G.,National Research University Higher School of Economics
Applied Physics Express | Year: 2015

We found that background radiation limits the dark count rates of superconducting single photon detectors coupled to standard single mode optical fibers to a minimum level when the source temperature of the photons is close to 300 K. We measured this level to be 103 cps, which was confirmed by a theoretical analysis of the background radiation influence. We also investigated the filtering-effect of cooled single mode optical fibers with different bending diameters and showed that for superconducting photon receivers with operating wavelengths below 2 μm the minimum dark count rate can be significantly decreased down to 0.1 cps. © 2015 The Japan Society of Applied Physics


Korneeva Y.P.,Moscow State Pedagogical University | Mikhailov M.Y.,Ukrainian Academy of Sciences | Pershin Y.P.,Kharkiv Polytechnic Institute | Manova N.N.,Moscow State Pedagogical University | And 7 more authors.
Superconductor Science and Technology | Year: 2014

We fabricated and characterized nanowire superconducting single-photon detectors made of 4 nm thick amorphous Mox Si1-x films. At 1.7 K the best devices exhibit a detection efficiency (DE) up to 18% at 1.2 wavelength of unpolarized light, a characteristic response time of about 6 ns and timing jitter of 120 ps. The DE was studied in wavelength range from 650 nm to 2500 nm. At wavelengths below 1200 nm these detectors reach their maximum DE limited by photon absorption in the thin MoSi film. © 2014 IOP Publishing Ltd.

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