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Grant
Agency: European Commission | Branch: H2020 | Program: IA | Phase: ICT-02-2014 | Award Amount: 5.51M | Year: 2015

Over the last decade, development of Smart Systems Integration (SSI) has demonstrated tremendous benefits in terms of enabling new functionalities of diverse products contributing to enormous economic potential with annual efforts in Europe estimated at approx.10 b. There is significant opportunity for innovative SMEs to further exploit SSI as they are ideally placed to commercialise and drive the whole product development cycle, effectively bridging the valley of death. Europe is in a strong position to champion its established RTOs competitive research, development and production facilities and to be a World leader in transitioning product development in SSI from prototyping to manufacturing, with particular focus in the low volume high value chain domain. SMARTER-SI has a unique opportunity to capitalise on Europes research excellence in SSI, leverage expertise of SMEs and RTOs and drive impact through commercial exploitation. Inspired by the Strategic Research Agenda of EPoSS, SMARTER-SI aims to develop a RTO Community Foundry Model (CFM) that will accelerate a wider deployment of SSI with greater access to design, manufacturing capabilities for prototyping, early validation and first production for SMEs to exploit in niche markets. A strategic objective is to lower entry barriers using the cooperative approach of utilising existing process steps/building blocks available at partner RTOs. This in turn will advance innovative products for SMEs in Europe. The system approach will enable these companies to reach for a higher profit margin than currently achievable with components sales. SMARTER-SI will thus facilitate a greater level of innovation and know-how that will reside within Europe and will be difficult to replicate by competitors in other regions for the manufacture and production of similar products. SMARTER-SI is designed to be a test bed to realise 10 Application Experiments through the CFM that will trigger a bigger action, e.g. in ECSEL.


Grant
Agency: European Commission | Branch: FP7 | Program: MC-ITN | Phase: FP7-PEOPLE-2011-ITN | Award Amount: 4.52M | Year: 2012

TALENT is a 4-year multi-site training network aiming at career development of young researchers on design, construction, manufacturing, testing and commissioning of innovative radiation hard detector modules and novel scientific instruments. TALENT provides, to 15 ESRs and 2 ERs, training for deep understanding of the complexity of scientific instrument building from theoretical design until industrial manufacturing cost efficiency considerations. The network consists of 9 academic institutions and 8 industrial companies of excellence, providing the researchers a multicultural, truly stimulating and interdisciplinary learning environment. The 2006 report of ESFRI and the European Strategy for Particle Physics set the CERN Large Hadron Collider (LHC) Upgrade and enhancement of intersectoral R&D as priorities to keep the leading high energy physics facilities and expertise of Europe at the world-class level. TALENT will make substantial advancements into these objectives. The research program significantly contributes into CERN ATLAS R&D project, the Insertable B-layer (IBL). Furthermore, IBLs innovative detector modules and instrumentation are already showing major potential for industrial applications in satellite instruments, X-ray systems, sensor technologies, medical imaging and cancer therapy. To enhance intersectoral R&D and training collaboration as well as mutual knowledge transfer, and thus to speed up the development of the IBL technologies, major R&D efforts within TALENT are put into these industrial applications. The mutual R&D interests the intersectoral consortium partners share is likely to lead into particularly creative multidisciplinary learning environment within TALENT. The chosen training approach will deepen the existing R&D collaborations between the partners and, more importantly, give the participating young researchers expertise and understanding to build a successful international career in R&D in science, industry or in their interface.


Romanyuk O.,ASCR Institute of Physics Prague | Hannappel T.,TU Ilmenau | Hannappel T.,CiS Research Institute for Micro Sensors and Photovoltaics | Grosse F.,Paul Drude Institute for Solid State Electronics
Physical Review B - Condensed Matter and Materials Physics | Year: 2013

The atomic structure of GaP(111)/Si(111), GaP(110)/Si(110), and GaP(113)/Si(113) heterointerfaces was studied by ab initio calculations employing the density functional theory (DFT). Relative formation energies were computed for the interface layers allowing for atomic intermixing. The application of the electron-counting model, a construction principle used for surface reconstructions, to the case of the GaP(111)/Si(111) interfaces leads to electronic compensation at the heterovalent interfaces and to a reduction of the interface formation energy. The specific equilibrium (111) interface reconstruction can be tuned by changing the chemical potential. In particular, the GaP(111)A/Si(111) interface was found to be abrupt and uncompensated under P-rich conditions, whereas it is compensated under Ga-rich conditions. The GaP(111)B/Si(111) interface was found to be compensated. Contrary to the (111) interfaces, stoichiometric abrupt interfaces were found to be the most energetically favorable for the GaP(110)/Si(110) and the GaP(113)/Si(113) interfaces. These interfaces do not reconstruct. Although both interfaces are compensated, the GaP(113)/Si(113) superlattice exhibits a polarization field, in contrast to the (110) superlattice. © 2013 American Physical Society.


Grant
Agency: European Commission | Branch: H2020 | Program: MSCA-ITN-ETN | Phase: MSCA-ITN-2015-ETN | Award Amount: 3.87M | Year: 2016

STREAM is a 4-year multi-site training network that aims at career development of Early Stage Researchers (ESRs) on scientific design, construction manufacturing and of advanced radiation instrumentation. STREAM targets the development of innovative radiation-hard, smart CMOS sensor technologies for scientific and industrial applications. The platform technology developed within the project will be tested in the demanding conditions posed by the CERN LHC detectors environment as well as European industry leaders in field of CMOS imaging, electron microscopy and radiation sensors. This leveraging factor will allow to fine-tune the technology to meet the requirements of industrial application cases on demand such as electron microscopy and medical X-ray imaging, as well as pathway towards novel application fields such as satellite environments, industrial X-ray systems and near-infrared imaging. The project will train a new generation of creative, entrepreneurial and innovative early-stage researchers and widen their academic career and employment opportunities. The STREAM consortium is composed of 10 research organisations and 5 industrial partners; the network will provide training to 17 ESRs. STREAM structures the research and training in four scientific work-packages which span the whole value-chain from research to application: CMOS Technologies Assessment, Smart Sensor Design and Layout, Validation and Qualification, Technology Integration, and Valorization.


Heinrich G.,CiS Research Institute for Micro Sensors and Photovoltaics | Heinrich G.,TU Ilmenau | Lawerenz A.,CiS Research Institute for Micro Sensors and Photovoltaics
Solar Energy Materials and Solar Cells | Year: 2014

In this article, silicon nitride (SiNx) layers deposited on planar silicon wafers with two different doped areas (emitter: highly phosphorous doped and bulk: lightly boron doped) were locally irradiated by laser pulses. Our investigation is focused on the ablation mechanisms. For that purpose, an ultra-short laser source (pulse duration 0.3-12 ps, wavelength 1025 nm, Gaussian profile) was used. For high pulse durations and low fluences the SiNx layer is removed completely by lift-off. However, for lower pulse durations and higher fluences, the SiNx layer is not completely removed, due to direct ablation. By using an emitter, direct ablation of SiNx layers were observed also for higher pulse durations. Thus, the absorption process in the SiNx layer can be described as avalanche ionization with seed electrons from silicon. © 2013 Elsevier B.V.


Moller C.,CiS Research Institute for Micro Sensors and Photovoltaics | Moller C.,TU Ilmenau | Lauer K.,CiS Research Institute for Micro Sensors and Photovoltaics
Physica Status Solidi - Rapid Research Letters | Year: 2013

Light-induced degradation of charge carrier lifetime was observed in indium-doped silicon. After defect formation, an annealing step at 200 °C for 10 min deactivates the defect and the initial charge carrier lifetime is fully recovered. The observed time range of the defect kinetics is similar to the well known defect kinetics of the light-induced degradation in boron-doped samples. Differences between defect formation in boron- and indium-doped silicon are detected and discussed. A new model based on an acceptor self-interstitial ASi-Sii defect is proposed and established with experimental findings and existing ab-initio simulations. Charge carrier lifetime degradation during light soaking of indium-doped samples with different oxygen concentrations. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.


Kegel J.,HTW Berlin University of Applied Sciences | Kegel J.,Helmholtz Center Berlin | Angermann H.,Helmholtz Center Berlin | Sturzebecher U.,CiS Research Institute for Micro Sensors and Photovoltaics | Stegemann B.,HTW Berlin University of Applied Sciences
Energy Procedia | Year: 2013

The application of an Isopropanol(IPA)-free potassium hydroxide (KOH) solution was evaluated in order to prepare random pyramids on as-cut crystalline n-type Si wafers to reduce reflection losses of substrates for high-efficiency hetero-junction solar cells. The influence of saw damage removal and texturization processes on the resulting pyramid morphology and the corresponding interplay between optical and electronic properties are revealed. It is shown that both the depth of the saw damage etching (SDE) and the duration of the texturization etching have crucial influence on the resulting pyramid size distribution. Reflection losses can be reduced with decreasing fraction of small pyramids. By intermediate saw damage removal and texture etching times in (IPA)-free KOH solution the densities of electronic interface states were found to be strongly decreased (Dit, min < 5 · 10-11 cm-2eV-1), in comparison to pyramids prepared in IPA containing solutions. For the purpose of fabricating amorphous/crystalline (a-Si:H/c-Si) heterojunction solar cells the Si substrate surfaces were passivated with an intrinsic layer of amorphous silicon (a-Si:H(i)) leading to minority charge carrier lifetimes τeff of 2 to 4 ms, depending on the preceding texturization process. © 2013 The Authors.


Muller R.,CiS Research Institute for Micro Sensors and Photovoltaics | Anders N.,University of Leipzig | Titus J.,University of Leipzig | Enke D.,University of Leipzig
Talanta | Year: 2013

In addition to polymers, porous glasses can be used for the immobilization of indicators, chromoionophores or enzymes. Advantages of these materials include, among others, the photochemical and thermal stability. Porous glass membranes (CPG) based on phase-separated alkali borosilicate glasses with thicknesses of 250-300 μm and dimensions of approximately 9-13 mm © 2013 ElsevierB.V.Allrightsreserved. .


Takeuchi N.,Yokohama National University | Ortlepp T.,CiS Research Institute for Micro Sensors and Photovoltaics | Yamanashi Y.,Yokohama National University | Yoshikawa N.,Yokohama National University
IEEE Transactions on Applied Superconductivity | Year: 2014

We experimentally demonstrated high-speed logic operations of adiabatic quantum-flux-parametron (AQFP) gates through the use of quantum-flux-latches (QFLs). In QFL-based high-speed test circuits (QHTCs), the output data of the circuits under test (CUTs), which are driven by high-speed excitation currents, are stored in QFLs and are slowly read out using low-speed excitation currents. We designed and fabricated three types of QHTCs using QFLs with different circuit parameters, where the CUTs were buffer gates and and gates. We confirmed the correct operation of buffer gates and and gates at 1 GHz. The obtained bias margins of the 1 GHz excitation currents were more than ± 30$% for each QHTC, which is wide enough for high-speed logic operations of AQFP gates. © 2002-2011 IEEE.


Takeuchi N.,Yokohama National University | Ortlepp T.,CiS Research Institute for Micro Sensors and Photovoltaics | Yamanashi Y.,Yokohama National University | Yoshikawa N.,Yokohama National University
Journal of Applied Physics | Year: 2014

We herein propose the quantum-flux-latch (QFL) as a novel latch for adiabatic quantum-flux-parametron (AQFP) logic. A QFL is very compact and compatible with AQFP logic gates and can be read out in one clock cycle. Simulation results revealed that the QFL operates at 5 GHz with wide parameter margins of more than ±22%. The calculated energy dissipation was only ∼0.1 aJ/bit, which yields a small energy delay product of 20 aJ·ps. We also designed shift registers using QFLs to demonstrate more complex circuits with QFLs. Finally, we experimentally demonstrated correct operations of the QFL and a 1-bit shift register (a D flip-flop). © 2014 AIP Publishing LLC.

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