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Puebla de Zaragoza, Mexico

Momox Beristain E.,CIDS ICUAP BUAP | Olvera-Hernandez J.,CIDS ICUAP BUAP | Martinez-Juarez J.,CIDS ICUAP BUAP | De Anda F.,IICO UASLP | And 4 more authors.
Thin Solid Films | Year: 2011

It is shown experimentally that the thickness and composition of Ga 1 - xAlxSb layers grown by liquid phase epitaxy on Gasb substrates depend on the conductivity type of the substrates. To avoid experimental uncertainties that naturally happen from an experiment to another one, such as changes in the exact liquid composition, growth temperature, temperature gradients, etc., the Ga1 - xAlxSb layers have been grown simultaneously from the same liquid solution on N and P type GaSb substrates. The X-ray rocking curves show that for every couple of layers, grown on N and P type substrates, there is a consistent difference between their thickness and composition. The thickness difference has also been verified by optical microscopy. A likely explanation of this effect is a change in surface energy of the substrate induced by the surface electric field normally present in semiconductors. © 2010 Elsevier B.V. All rights Reserved. Source


Momox-Beristain E.,CIDS ICUAP BUAP | Martinez-Juarez J.,CIDS ICUAP BUAP | De Anda F.,Autonomous University of San Luis Potosi | Compean-Jasso V.H.,Autonomous University of San Luis Potosi | And 2 more authors.
Thin Solid Films | Year: 2011

It is shown that the conductivity of the substrate has a non negligible effect on the thickness and composition of epitaxial layers grown by Liquid Phase Epitaxy. The growth experiments have been done on the systems GaAs/GaAs, GaAlSb/GaSb and GaInAsSb/GaSb. To insure strictly the same growth conditions the growth was done simultaneously, from the same liquid phase, on the different substrates. © 2011 Elsevier B.V. All rights reserved. Source

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