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Ying W.,Chongqing University of Science and Technology | Cheng Y.X.,Chongqing Public Affairs Management Center | Shaochun H.,Chongqing Optoelectronic Research Institute | Yi X.,Chongqing University of Science and Technology | And 2 more authors.
Journal of Nanoelectronics and Optoelectronics | Year: 2013

Carbon nanotube (CNT) has a potential to be efficient spectrum detection material due to their unique electronic properties. A photodetector based on CNT array is fabricated by growing the CNTs on the substrate surface with CVD methods and then the electrodes that contact with the CNTs are fabricated with photolithography techniques, providing a simple fabrication method for detector based on CNT array. The structure of the CNTs-based detector is characterized with SEM picture. Functionality of the detector based on CNT array is then verified by monitoring the photocurrent response for different light illumination. Experimental results give that the incident light can be detected and quantified with the detector based on carbon nanotube array, which shows more sensitive than the previous reported sensor based on an individual CNT. © 2013 American Scientific Publishers. All rights reserved.


Ying W.,Chongqing University of Science and Technology | Shaochun H.,Chongqing Optoelectronic Research Institute | Yihong O.,PLA Logistical Engineering University | Yu Ching L.,Tohoku University | And 2 more authors.
Journal of Nanoelectronics and Optoelectronics | Year: 2012

Carbon nanotube array have a potential to be efficient spectrum detection material due to their unique electronic properties. A photodetector based on carbon nanotube is developed by fabricating the electrodes with photolithography techniques and then synthesizing the carbon nanotube array that contact with the electrodes with chemical vapor deposition oriented growing techniques. The structure of the photodetector based on carbon nanotube is characterized with scanning electron microscope pictures and the electronic behavior of photodetector based on carbon nanotube array is investigated with I-V curves. The photocurrent of the developed device has been measured under the different light illumination. Photodetector based on carbon nanotube array has different current output corresponding to different light illumination, which can be used to detect the incident light and verify the functionality of the photodetector based on carbon nanotube array, giving a new idea for the fabrication of devices based on carbon nanotube. Copyright © 2012 American Scientific Publishers All rights reserved.


Wu Y.,Chongqing University of Science and Technology | Wu Y.,Nanjing Southeast University | Wu Y.,Chongqing Optoelectronic Research Institute | Bai J.,Chongqing University of Science and Technology | And 11 more authors.
Proceedings of 2014 IEEE 13th International Conference on Cognitive Informatics and Cognitive Computing, ICCI*CC 2014 | Year: 2014

Being direct band-gap materials, carbon nanotubes (CNTs) have a potential to be efficient optoelectronic detection material. In order to explore this potential application, a CNTs-based device is fabricated with micromachined techniques and depositing the CNTs on the substrate surface with CVD growth methods. The structure of the CNTs-based device is characterized with SEM picture. Normally CNTs forms a schottky barrier or metal contact with the metal electrodes. The photoelectronic properties of carbon nanotubes based device with different contact mode are measured and analysised. Experimental results show that the performance of CNT based micro device can be further improved by using asymmetric contacts. © 2014 IEEE.


Huang S.,Chongqing Optoelectronic Research Institute | Liu X.,Chongqing City Management College | Ye S.,Chongqing Optoelectronic Research Institute | Liu X.,Chongqing Optoelectronic Research Institute
Bandaoti Guangdian/Semiconductor Optoelectronics | Year: 2014

Adding surfactant tetramethylammonium hydroxide (TMAH) and chelating agent ethylenediaminetetraacetic acid (EDTA) into the SC-1 cleaning solution used in conventional RCA cleaning process, the removal efficiency of various cleaning recipes on particles and metallic impurities was analyzed, and their effects on the surface roughness of silicon wafer were measured. The Weibull distribution of breakdown electric field intensity of MOS capacitors was used to evaluate the electrical properties of the oxide films cleaned with various recipes. The experimental results indicate that the particles and metallic contamination on the bare Si wafer surface can be removed significantly by using this optimized cleaning solution with less time and lower cost.

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