Hangzhou, China
Hangzhou, China

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He Y.,Shanghai Normal University | Wang Y.,Shanghai Normal University | Li W.,Chint Solar Zhejiang Co. | Li W.,Nanchang University | And 6 more authors.
Journal of Non-Crystalline Solids | Year: 2012

Amorphous silicon nitride (SiN X:H) thin films grown by the plasma enhanced chemical vapor deposition (PECVD) method are presently the most important antireflection coatings for crystalline silicon solar cells. In this work, we investigated the optical properties and chemical bonding characteristics of the amorphous SiN X:H thin films deposited by PECVD. Silane (SiH 4) and ammonia (NH 3) were used as the reactive precursors. The dependence of the growth rate and refractive index of the SiN X:H thin films on the SiH 4/NH 3 gas flow ratio was studied. The chemical bonding characteristics and the surface morphologies of the SiN X:H thin films were studied using the Fourier transform infrared spectroscopy and atomic force microscopy, respectively. We also investigated the effect of rapid thermal processing on the optical properties and surface morphologies of the SiN X:H thin films. It was found that the rapid thermal processing resulted in a decrease in the thickness, increase in the refractive index, and coarser surfaces for the SiN X:H thin films. © 2011 Elsevier B.V. All rights reserved.


Du G.,Nanchang University | Zhang Y.,Shanghai Normal University | Li W.,Chint Solar Zhejiang Co. | Chen N.,Nanchang University | And 2 more authors.
Progress in Photovoltaics: Research and Applications | Year: 2015

Silicon nitride coating deposited by the plasma-enhanced chemical vapor deposition method is the most widely used antireflection coating for crystalline silicon solar cells. In this work, we employed double-layered silicon nitride coating consisting of a top layer with a lower refractive index and a bottom layer (contacting the silicon wafer) with a higher refractive index for multicrystalline silicon solar cells. An optimization procedure was presented for maximizing the photovoltaic performance of the encapsulated solar cells or modules. The dependence of their photovoltaic properties on the thickness of silicon nitride coatings was carefully analyzed. Desirable thicknesses of the individual silicon nitride layers for the double-layered coatings were calculated. In order to get statistical conclusions, we fabricated a large number of multicrystalline silicon solar cells using the standard production line for both the double-layered and single-layered antireflection coating types. On the cell level, the double-layered silicon nitride antireflection coating resulted in an increase of 0.21%, absolute for the average conversion efficiency, and 1.8 mV and 0.11 mA/cm2 for the average open-circuit voltage and short-circuit current density, respectively. On the module level, the cell to module power transfer factor was analyzed, and it was demonstrated that the double-layered silicon nitride antireflection coating provided a consistent enhancement in the photovoltaic performance for multicrystalline silicon solar cell modules than the single-layered silicon nitride coating. Copyright © 2015 John Wiley & Sons, Ltd.


Li W.,Chint Solar Zhejiang Co. | Li Y.,Nanchang University | Du G.,Nanchang University | Chen N.,Nanchang University | And 5 more authors.
Ceramics International | Year: 2016

In order for thin film solar cells to have high conversion efficiency, their front electrodes must have high electrical conductivity and optical transparency. The front electrode is made of transparent conductive oxide films. In this work, boron-doped ZnO films were grown using the low pressure chemical vapor deposition technique, and they were used as the front electrodes for amorphous silicon thin film solar cells. The as-grown boron-doped ZnO films have good optical properties, but their electrical properties still need to be improved for applications in thin film solar cells. This work demonstrated that the electrical properties of the as-grown boron-doped ZnO films can be significantly enhanced by annealing in hydrogen atmosphere, and at the same time their good optical properties were maintained. By using the annealed boron-doped ZnO films in amorphous silicon thin film solar cells, it was found that their conversion efficiency was remarkably increased from 7.32% to 8.92%. © 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.


Lai H.,Shanghai Normal University | Wang Y.,Shanghai Normal University | Du G.,Shanghai Normal University | Du G.,Nanchang University | And 3 more authors.
Ceramics International | Year: 2014

Submicron-sized YVO4:Eu3+,Bi3+ were prepared using a hydrothermal method, and the YVO4:Eu 3+,Bi3+@SiO2 core-shell particles were fabricated by a sol-gel method. These particles were embedded in the photoanodes of dye-sensitized solar cells. The embedded YVO4:Eu 3+,Bi3+@SiO2 particles not only enhanced light scattering within the photoanode, but were also able to downconvert ultraviolet light to visible light. The enhanced light scattering can greatly extend the light traveling distance within the photoanode, while the ultraviolet-visible downconversion property can effectively improve the utilization efficiency of short wavelength photons by the dye-sensitized solar cells. The embedded submicron-sized YVO4:Eu3+,Bi3+@SiO2 particles increased the power conversion efficiency of dye-sensitized solar cell by about 64% from 3.6% to 5.9%. © 2013 Elsevier Ltd and Techna Group S.r.l.


Qi L.,Shanghai Normal University | Hu Z.,Shanghai Normal University | Li W.,Chint Solar Zhejiang Co. | Li W.,Nanchang University | And 5 more authors.
Materials Science in Semiconductor Processing | Year: 2012

Microcrystalline silicon (μc-Si) thin films are widely used for silicon thin film solar cells, especially in the high performance tandem solar cells which comprise an amorphous silicon junction at the top and a μc-Si junction at the bottom. One of the major factors affecting the photovoltaic properties of μc-Si thin film solar cells of thin films is the quality of the μc-Si thin films. In this work, we investigated the effect of substrates on the crystallization characteristics and growth behaviors of μc-Si thin films grown by the plasma enhanced chemical vapor deposition method (PECVD), and found that substrates have a strong effect on the crystallization characteristics of μc-Si thin films. In addition, the growth rate of μc-Si thin films was also highly influenced by the substrates. Three types of substrates, quartz glass, single crystalline silicon and thermally oxidized single crystalline silicon, were used for growing μc-Si thin films from SiH 4/H 2 with a flow rate ratio 2:98 at different temperatures. Crystallization characteristics of these μc-Si thin films were studied by Raman scattering and X-ray diffraction techniques. © 2012 Elsevier Ltd. All rights reserved.


Liu S.,Chint Solar Zhejiang Co. | Liu S.,Zhejiang University | Niu X.,Chint Solar Zhejiang Co. | Shan W.,Chint Solar Zhejiang Co. | And 8 more authors.
Solar Energy Materials and Solar Cells | Year: 2014

The reactive ion etching in combination with acidic etching (acidic+RIE) is applied to form the front surface texturing of 156×156 mm2 multicrystalline silicon (mc-Si) wafers in order to improve the cell efficiency. The scanning electron microscope (SEM) analyses indicate that the RIE process produces dense nanoscale ridge-like structures based on the acidic textured surfaces, and these structures generate an excellent antireflection effect. The matching processes including the post-cleaning, the phosphorus diffusion, and the deposition of silicon nitride (SiNX) antireflection coating are optimized. The acidic+RIE textured surfaces in combination with high sheet resistance emitters result in a remarkable enhancement in short wavelength response and then improve the short circuit current density (JSC) significantly. The absolute conversion efficiency of acidic+RIE textured solar cells is improved 0.51% on average compared to the acidic textured solar cells in mass production, and a maximum full-area cell efficiency of 18.49% is achieved on the mc-Si solar cell with a conventional cell structure. © 2014 Elsevier B.V.


Li Z.,Zhejiang University | Wang L.,Zhejiang University | Yang D.,Zhejiang University | Zhu X.,Chint Solar Zhejiang Co. | And 2 more authors.
Taiyangneng Xuebao/Acta Energiae Solaris Sinica | Year: 2011

Single crystalline silicon solar cells with three different rear busbar patterns were presented in the paper, the mechanical property in the front and rear busbar region, aluminum back surface area, and fingers region was investigated by three point bending test, respectively. The influence of the rear busbar patterns on the fracture strength was discussed. It's indicated that the rear busbar patterns have obvious influence on the fracture strength of solar cells. The mechanical property can be effectively improved by modifying the rear busbar patterns, which result in reducing broken rate.


Pan J.,Zhejiang Sci-Tech University | Cao J.,Zhejiang Sci-Tech University | Cao J.,Chint Solar Zhejiang Co. | Mei J.,Nanjing Normal University | And 5 more authors.
Materials Letters | Year: 2016

The Ag@AgCl modified K2Ta2O6 composites are prepared via a simple route of precipitation-photoreduction method. The results of XRD, SEM and TEM indicate that K2Ta2O6 is well combined with Ag@AgCl. By degradation of Rhodamine B under natural light, the composites exhibit a significant enhancement in photocatalysis. Furthermore the heterojunction and the remarkable visible light absorption from Ag@AgCl are considered as the main reasons of the enhancement. © 2016 Elsevier B.V.


Wronski C.R.,Pennsylvania State University | Niu X.,Chint Solar Zhejiang Co.
IEEE Journal of Photovoltaics | Year: 2014

Contributions of different light-induced defect states to degradation of solar cells have been established for high-quality p-i-n solar cells with i layers of protocrystalline a-Si:H deposited at very low rates, whose nanostructure is dominated by hydrogen-passivated divacancies. Nature of the different light-induced gap states and their respective roles as electron and hole recombination centers were characterized in the thin films from their photocurrents, and in corresponding solar cells from their Shockley-Reed-Hall carrier recombination currents. The results were directly related to three light-induced states, with 'A' and 'B' within 0.2 eV and 'C' 0.4 eV below midgap, identified from subgap absorption. The A and B states are efficient electron, while the C states are very efficient hole recombination centers. Under 1-sun illumination, the former dominate the electron lifetimes, while the latter are key to solar cell operation as is confirmed by the direct correlation of their creation with the degradation of VOC and 1-sun fill factor (FF). It is also shown that the apparent correlation found earlier between the cell FF and electron lifetimes is due to the same long-term degradation kinetics of the light-induced changes in the B t and C states. © 2011-2012 IEEE.


Patent
Chint Solar Zhejiang Co. | Date: 2013-09-25

The present invention discloses a method of fabricating a heterojunction battery, comprising the steps of: depositing a first amorphous silicon intrinsic layer on the front of an n-type silicon wafer, wherein the n-type silicon wafer may be a monocrystal or polycrystal silicon wafer; depositing an amorphous silicon p layer on the first amorphous silicon intrinsic layer; depositing a first boron doped zinc oxide thin film on the amorphous silicon p layer; forming a back electrode and an Al-back surface field on the back of the n-type silicon wafer; and forming a positive electrode on the front of the silicon wafer. In addition, the present invention further discloses a method of fabricating a double-sided heterojunction battery. In the present invention, the boron doped zinc oxide is used as an anti-reflection film in place of an ITO thin film; due to the special nature, especially the light trapping effect of the boron doped zinc oxide, the boron doped zinc oxide can achieve good anti-reflection. Therefore, the step of texturization is removed and the fabrication process simplified. As polycrystal silicon texturization is more challenging, the present invention is of more significance to heterojunction batteries using a polycrystal silicon wafer.

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