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Hangzhou, China

Du G.,Nanchang University | Zhang Y.,Shanghai Normal University | Li W.,Chint Solar Zhejiang Co. | Chen N.,Nanchang University | And 2 more authors.
Progress in Photovoltaics: Research and Applications | Year: 2015

Silicon nitride coating deposited by the plasma-enhanced chemical vapor deposition method is the most widely used antireflection coating for crystalline silicon solar cells. In this work, we employed double-layered silicon nitride coating consisting of a top layer with a lower refractive index and a bottom layer (contacting the silicon wafer) with a higher refractive index for multicrystalline silicon solar cells. An optimization procedure was presented for maximizing the photovoltaic performance of the encapsulated solar cells or modules. The dependence of their photovoltaic properties on the thickness of silicon nitride coatings was carefully analyzed. Desirable thicknesses of the individual silicon nitride layers for the double-layered coatings were calculated. In order to get statistical conclusions, we fabricated a large number of multicrystalline silicon solar cells using the standard production line for both the double-layered and single-layered antireflection coating types. On the cell level, the double-layered silicon nitride antireflection coating resulted in an increase of 0.21%, absolute for the average conversion efficiency, and 1.8 mV and 0.11 mA/cm2 for the average open-circuit voltage and short-circuit current density, respectively. On the module level, the cell to module power transfer factor was analyzed, and it was demonstrated that the double-layered silicon nitride antireflection coating provided a consistent enhancement in the photovoltaic performance for multicrystalline silicon solar cell modules than the single-layered silicon nitride coating. Copyright © 2015 John Wiley & Sons, Ltd. Source


Wronski C.R.,Pennsylvania State University | Niu X.,Chint Solar Zhejiang Co.
IEEE Journal of Photovoltaics | Year: 2014

Contributions of different light-induced defect states to degradation of solar cells have been established for high-quality p-i-n solar cells with i layers of protocrystalline a-Si:H deposited at very low rates, whose nanostructure is dominated by hydrogen-passivated divacancies. Nature of the different light-induced gap states and their respective roles as electron and hole recombination centers were characterized in the thin films from their photocurrents, and in corresponding solar cells from their Shockley-Reed-Hall carrier recombination currents. The results were directly related to three light-induced states, with 'A' and 'B' within 0.2 eV and 'C' 0.4 eV below midgap, identified from subgap absorption. The A and B states are efficient electron, while the C states are very efficient hole recombination centers. Under 1-sun illumination, the former dominate the electron lifetimes, while the latter are key to solar cell operation as is confirmed by the direct correlation of their creation with the degradation of VOC and 1-sun fill factor (FF). It is also shown that the apparent correlation found earlier between the cell FF and electron lifetimes is due to the same long-term degradation kinetics of the light-induced changes in the B t and C states. © 2011-2012 IEEE. Source


Trademark
Chint Solar Zhejiang Co. | Date: 2008-07-08

Apparatus for converting electronic radiation to electrical energy, namely, photovoltaic solar hybrid modules; Apparatus for converting electronic radiation to electrical energy, namely, photovoltaic solar modules; Solar batteries; Solar cells; Batteries for lighting; Electrical cells and batteries; Galvanic batteries; Plates for batteries; Accumulator boxes; Electric accumulators; Silicon wafers; Integrated circuits.


Trademark
Chint Solar Zhejiang Co. | Date: 2008-07-08

Accumulator boxes; Apparatus for converting electronic radiation to electrical energy, namely, photovoltaic solar hybrid modules; Apparatus for converting electronic radiation to electrical energy, namely, photovoltaic solar modules; Batteries for lighting; Electric accumulators; Electrical cells and batteries; Galvanic batteries; Solar batteries; Solar cells; Plates for batteries; Integrated circuits; Silicon wafers.


Trademark
Chint Solar Zhejiang Co. | Date: 2008-07-08

Apparatus for converting electronic radiation to electrical energy, namely, photovoltaic solar hybrid modules; Apparatus for converting electronic radiation to electrical energy, namely, photovoltaic solar modules; Solar batteries; Solar cells; Batteries for lighting; Electrical cells and batteries; Galvanic batteries; Plates for batteries; Accumulator boxes; Electric accumulators; Silicon wafers; Integrated circuits.

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