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Haridwar, India

Panwar A.,Chinmaya Degree College | Chandra M.,Deccan College Post-Graduate and Research Institute | Tyagi B.P.,Deccan College Post-Graduate and Research Institute
Journal of Nano- and Electronic Physics | Year: 2011

The activation energy of a poly-Si thin film transistor is observed to be influenced by the grain size, trap state density and the inversion layer thickness. The present study aims to investigate these parameters theoretically so as to explore optimum conditions for the working of a polycrystalline silicon thin film transistor. Our computations have revealed that the activation energy decreases with the increase of gate bias for all values of grain size, trap states density and the inversion layer thickness. These findings are compared with the experimental results. © 2011 SumDU. Source


Panwar A.,Chinmaya Degree College | Tyagi B.P.,P.A. College
Journal of Nano- and Electronic Physics | Year: 2011

In order to achieve both driver and display capability for a number of display devices, TFT has attracted attention, model calculations are therefore presented for the grain boundary barrier height, in a polysilicon TFT considering the charge neutrality between the intrinsic free carriers and the grain boundary trap states. The formation of the potential barrier at a grain boundary is considered due to the trapping of carriers at the localized grain boundary trap states. The trapped charges, influenced by the gate bias voltage and the trapping states density, in turn, have been taken to deplete free carriers near the grain boundary in a device such as polysilicon TFT. The present predictions reveal that the barrier height diversely depends on the gate source voltage (VGS) of a TFT along with other crystal parameter. Finally to obtain the transconductance, the contributions of transverse and longitudinal grain boundary resistances are incorporated in the I-V characteristics of a TFT. For all values of grain size, the transconductance of the device is seen to increase initially with the gate voltage (VGS) which finally appears to be saturated. The dependence of the transconductance on grain size and drain voltage has been thoroughly explored. Good agreement with experimental results is achieved. © 2011 SumDU. Source


Kumar A.,Chinmaya Degree College | Dutt U.,Chinmaya Degree College
Biochemical and Cellular Archives | Year: 2011

Impact of glutathione against arsenic poisoning with special reference to liver through enzymological parameters have been studied in rats, Rattus rattus albino. Intake of arsenic inhibited the activities of phosphatases, dehydrogenases, and cholinesterase significantly, however, lipase activity increased insignificantly. Reversal of key enzymes activity after supplementation of glutathione to arsenic fed rats, reflects a repair in cell membrane and organelles. Specific reasons for these pharmacotoxicological changes have also been discussed. Source

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