Chinalight Solar Co.

Beijing, China

Chinalight Solar Co.

Beijing, China

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Zhou C.,CAS Institute of Electrical Engineering | Li T.,CAS Institute of Electrical Engineering | Wang W.,CAS Institute of Electrical Engineering | Zhao L.,CAS Institute of Electrical Engineering | And 7 more authors.
Conference Record of the IEEE Photovoltaic Specialists Conference | Year: 2011

The use of light-induced plating (LIP) for metallization of solar cells is attractive because of its potential simplicity in that the current driving the metal reduction process is derived from the solar cell under illumination. However, there is a challenge when applying the LIP techniques on standard acidic textured multicrystalline silicon wafers with a silicon nitride coated surface. The over-plating can cause the decrease of the solar cells efficiency mainly through the shunt or forming schottky contact, and shading losses. The main reason of over-plating on acidics, also on the alkali textured multicrystalline silicon wafers is saw mark. The over-plating on saw-damage multicrystalline silicon is still evident even the coated SiN x:H films is proper to as the plating mask. In this work, the effect of saw marks on over-plating are examined and evaluated. Finally, the elimination of over-plating on acidic textured multicrystalline silicon cells are demonstrated. © 2011 IEEE.


Li T.,CAS Institute of Electrical Engineering | Zhou C.,CAS Institute of Electrical Engineering | Liu Z.,CAS Institute of Electrical Engineering | Wang W.,CAS Institute of Electrical Engineering | And 4 more authors.
Applied Mechanics and Materials | Year: 2011

In this paper, the improvement on electrical properties of screen-printed crystalline silicon solar cells by light-induced electroplating of silver is studied. Optical losses are analysed by the introduction of scale factor in the calculation. Electrical losses are mainly from the seed layer electrodes, top layer electrodes, the emitter, the base and the contact resistance between silicon and silver. Light-induced electroplating of silver is able to reduce the total power losses of screen-printed solar cells obviously by denser silver electrode. In experiment, the relative increments of I-V parameters as a function of electroplating time for crystalline silicon solar cells with 60μm, 75μm and 90μm wide seed layer electrodes are measured. After light-induced electroplating process, the cells efficiencies of 16.8%, 17.2% and 17.8% have reached on 60μm, 75μm and 90μm wide gridlines screen-printed solar cells, respectively. The calculated results and experimental data show good agreement. Due to the successful verification by comparing between numerical simulation and experimental data, the simulation results could be used to optimize the two-layer electrode structure and light-induced electroplating process. © (2011) Trans Tech Publications.


Li T.,CAS Institute of Electrical Engineering | Zhou C.,CAS Institute of Electrical Engineering | Liu Z.,CAS Institute of Electrical Engineering | Wang W.,CAS Institute of Electrical Engineering | And 4 more authors.
Materials Science Forum | Year: 2011

In this paper, the dark current-voltage characteristics of p-n junction of silicon solar cells are analysed, with different nickel film thicknesses of 200nm, 400nm and 600nm. The formation of nickel silicide is obtained after the thermal annealing process for 1min, 5min and 10min. The dark current-voltage curves obtained by three kinds of annealing temperature as a function of time are achieved in experiment. The improvement of series resistance extracted from the dark current-voltage curve in the upper voltage range is observed. The influence of nickel film thicknesses on dark current-voltage characteristics of silicon solar cells is confirmed.


Li T.,CAS Institute of Electrical Engineering | Zhou C.,CAS Institute of Electrical Engineering | Song Y.,Chinalight Solar Co. | Gao Z.,Chinalight Solar Co. | And 3 more authors.
Taiyangneng Xuebao/Acta Energiae Solaris Sinica | Year: 2012

The theoretical model of continuous laser ablation of monocrystalline silicon solar cells using thermodynamic method was established and analytical solution by calculating the temperature field distribution of a simplified model was obtained. According to the highly nonlinear of model of laser ablating monocrystalline silicon, the unsteady temperature field distribution and ablation depth, ablation width as well as ablation morphology were simulated using the finite difference method in Matlab within appropriate time. The simulation results are consistent with the experimental observations.


Zhou C.,CAS Institute of Electrical Engineering | Li T.,CAS Institute of Electrical Engineering | Song Y.,Chinalight Solar Co. | Zhou S.,CAS Institute of Electrical Engineering | And 9 more authors.
Solar Energy | Year: 2011

Light-induced plating (LIP), in which the current driving the metal reduction process is derived from illuminated solar cells, is an attractive technique for solar cell metallization because of its potential simplicity. However, applying the LIP techniques on standard acidic-textured multicrystalline silicon wafers with a silicon nitride-coated surface presents a challenge. The use of a spray-on carbon-doped non-stoichiometric silicon oxide [SiO. x(C)] dielectric film before nickel and silver plating can greatly reduce background plating while helping decrease the reflectance on the front of silicon solar cells. The sprayed dielectric films have low refractive indices of 1.3-1.4, depending on the annealing temperature. Simulation studies show that the SiO. x(C)/SiN. x dual-layer anti-reflective coating has a lower weighted reflectance against an AM 1.5. G spectrum compared with the SiN. x single coating. Finally, the performance of the laser-doped solar cells with a standard SiN. x as an anti-reflectance coating were compared with those with the SiO. x(C)/SiN. x double-layer stack. An efficiency of 16.74% on a large, commercial-grade, p-type, multicrystalline silicon substrate was achieved. © 2011 Elsevier Ltd.


Zhou C.,CAS Institute of Electrical Engineering | Zhou S.,CAS Institute of Electrical Engineering | Wang W.,CAS Institute of Electrical Engineering | Zhao L.,CAS Institute of Electrical Engineering | And 5 more authors.
Conference Record of the IEEE Photovoltaic Specialists Conference | Year: 2012

The emitter dopant profile between the metal grid in lase doping selective emitter cells was modified by oxidation the phosphosilicate glass (PSG) film at a higher temperature. This diffusion process contains two steps. Step 1 form the PSG layer on the wafer surface by the reaction of POCl3 and oxygen. Step 2 increase the temperature to a higher value at which the oxidation of PSG layer is proceeded. For the practical cell process, the laser power and front metal-grid were optimized, considering the dependence on the light induced plating nickel-silicon contact and on the emitter sheet resistance. Comparing with the uniform emitter multicrystalline silicon solar cells, significant increase of short circuit current by 0.3 A and open circuit voltage by 6 mV was obtained resulting in an average gain of 0.6%abs. An average efficiency of 17.2% and the largest of 17.42% for the best cell on a large area commercial grade p-type multi-crystalline silicon substrate were achieved. © 2012 IEEE.


Li T.,CAS Institute of Electrical Engineering | Zhou C.,CAS Institute of Electrical Engineering | Liu Z.,CAS Institute of Electrical Engineering | Wang W.,CAS Institute of Electrical Engineering | And 4 more authors.
Applied Mechanics and Materials | Year: 2012

In this paper, a nonlinear numerical model of laser melting of crystalline silicon solar cells and phosphorus diffusion has been established by finite difference method implemented in MATLAB. Based on the features of liquid-phase diffusion of phosphorus atoms in melting silicon, theoretical simulation for phosphorus concentration profiles and explanation for the mechanism of laser doping are achieved. The theoretical phosphorus concentration profile is in good agreement with the experimental SIMS data. © (2012) Trans Tech Publications, Switzerland.


Li T.,CAS Institute of Electrical Engineering | Zhou C.-L.,CAS Institute of Electrical Engineering | Song Y.,Chinalight Solar Co. | Yang H.-F.,Chinese Academy of Inspection and Quarantine | And 5 more authors.
Wuli Xuebao/Acta Physica Sinica | Year: 2011

One main factor of restricting industrial crystalline solar cell efficiency is the optical losses caused by the metal front side contacts, including the absorption loss and reflection loss. Based on screen-printed and screen-printed seed layers thickened by light-induced electroplating solar cells, in this paper various cases of optical losses due to the metal contacts are analyzed. Taking into account the reflections in the air-glass interface and the edge regions of metal contacts, the optical losses are simulated by assuming approximately half-oval cross-section of metal contacts. The results show that the effective width ratio is about 40% of the metal contact geometry width. By measuring and calculating the reflection spectra of different types of samples, the optical losses of the metal front side contacts of solar cells are obtained in theoretical simulation and experimental measurement. The corresponding theory and the experimental results are in good agreement with each other. © 2011 Chinese Physical Society.


Li T.,CAS Institute of Electrical Engineering | Zhou C.,CAS Institute of Electrical Engineering | Liu Z.,CAS Institute of Electrical Engineering | Wang W.,CAS Institute of Electrical Engineering | And 4 more authors.
Applied Mechanics and Materials | Year: 2011

In this paper, the ghost plating problems of crystalline silicon solar cells is studied in theory and experiment. After laser doping process, a pretreatment process is needed to remove SiO 2 in the heavy doping area and keep SiN mask simultaneously by using chemical solution containing HF. Otherwise, the unexpected non-heavy-doping area would be plated with silver, resulting in the ghost plating problems. The mechanism of HF etching SiO 2 and SiN is analyzed and the feasibility of selective etching is discussed. By changing the main aspects of affecting the etching rate, the ghost plating of crystalline silicon solar cells is improved. © (2011) Trans Tech Publications.


Li T.,CAS Institute of Electrical Engineering | Wang W.,CAS Institute of Electrical Engineering | Zhou C.,CAS Institute of Electrical Engineering | Song Y.,Chinalight Solar Co. | And 2 more authors.
Progress in Photovoltaics: Research and Applications | Year: 2013

Large-area multicrystalline silicon solar cells fabrication by laser doping is studied in this paper. The liquid dopant solution is sprayed onto the SiNx:H film to act as dopant source. Laser doping is performed to locally melt silicon substrates, and phosphorus dopant atoms are incorporated into the liquid silicon by liquid-phase diffusion to form a selective emitter. Light-induced plating is carried out for front side metallization. The influences of laser energy density and pulse overlap on electrical performance of large-area multicrystalline silicon solar cells are obtained. The laser energy density and pulse overlap are optimized in consideration of sufficient built-in voltage and small-scale laser-induced damage. The typical spectral response for large-area multicrystalline silicon solar cells by laser doping is presented. The typical efficiency distribution for 1-day production of the 10 MW production line shows the overall average efficiency above 18% on large-area commercial-grade multicrystalline silicon substrates for the 4 months of operation, confirming the potential for transferring high-efficiency selective emitter silicon solar cells by laser doping into a production line. Copyright © 2012 John Wiley & Sons, Ltd.

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