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Fan S.,China Institute of Technology | Liao J.,China Institute of Technology | Wei X.,China Institute of Technology | Hu S.,China United Cleaning Technology Co. | Yu J.,China Institute of Technology
Advanced Materials Research | Year: 2012

Series resistance in solar cell is known to be one of the key factors which need to be optimized, especially through the design of the front pattern. This paper is the utilization of the improved diode and series resistance model to represent the solar cell. The results show: three buses are suitable for high square resistance and fine grid line. Plating technology can improve the absolute conversion efficiency over 17%. In addition, 71 fingers for three buses and 76 fingers for two buses were select in production. It is imagined that the proposed model is very useful for PV professionals who require simple, fast and accurate PV model to design their cells. © (2012) Trans Tech Publications, Switzerland. Source


Zhong S.,Beijing Jiaotong University | Zhong S.,China United Cleaning Technology Co. | Xu Z.,Beijing Jiaotong University | Zhao S.,Beijing Jiaotong University | And 3 more authors.
Taiyangneng Xuebao/Acta Energiae Solaris Sinica | Year: 2014

The method of acid texturization with the technique of dual layer anti-reflection coating was studied. Comparing acid textured solar cells with alkaline textured solar cells, except it had lower efficiency and short-circuit current, it had obvious advantage on open circuit voltage, shunt resistance and reverse leakage current. In the experiment of dual coatings, it was found that the total reflectance especially in the short wavelength became lower with the increase of the plating time, thus short circuit current increased when the plating time of the first coating was below 180 s (the thickness of the coating is below 34.6 nm). But if the plating time was continued increasing, the short circuit current would decline, though the reflectance of the short wavelength still decreased. ©, 2014, Science Press. All right reserved. Source


Zhang P.,Beijing Jiaotong University | Zhang P.,China United Cleaning Technology Co. | Xu Z.,Beijing Jiaotong University | Zhao S.,Beijing Jiaotong University | And 3 more authors.
Taiyangneng Xuebao/Acta Energiae Solaris Sinica | Year: 2014

The influence of hydrogen plasma by ammonia ionization preprocessing of MC-Si solar cells before deposition of SiNx thin films was described. The effect of preprocessing time, RF power, temperature and the pressure were investigated. The short circuit current is 4% higher than before. Then the silicon nitride (SiNx) was deposited for crystalline silicon solar cell by means of plasma enhanced chemical vapor deposition (PECVD), and the results indicated that the hydrogen plasma could walk through the silicon nitride and the carrier lifetime increased about 5μs. The low temperature pretreatment could make the short current increased and the best range is 430-440°C. Source


Liu J.,Beijing Jiaotong University | Liu J.,China United Cleaning Technology Co. | Xu Z.,Beijing Jiaotong University | Zhao S.,Beijing Jiaotong University | And 4 more authors.
Taiyangneng Xuebao/Acta Energiae Solaris Sinica | Year: 2012

As the key process of the production of crystalline silicon solar cell, the effect of diffusion or the square resistance's uniformity plays a very important role. The factors affecting the uniformity of the square resistance mainly include the flow rate of high N 2, low N 2 and O 2, the change of source saturation time and built in time, and the change of central temperature of the furnace. By changing these factors, a law which can effectively control the value of the square resistance and optimize the uniformity of the square resistance can be got. Both high N 2 and low N 2 can affect the uniformity of the square resistance, while temperature can affect the square resistance a lot. Source


Liu Z.,Beijing Jiaotong University | Liu Z.,China United Cleaning Technology Co. | Zhao S.,Beijing Jiaotong University | Xu Z.,Beijing Jiaotong University | And 4 more authors.
Taiyangneng Xuebao/Acta Energiae Solaris Sinica | Year: 2011

Antireflection from of silicon nitride (SiNx)was deposited for crystalline silicon solar cells by means of plasma enhanced chemical vapor deposition (PECVD). The effect of the pressure, ratio of SiH4/NH3, the gas flow, temperature and deposition time were investigated .The deposition rate, refractive index, film uniformity and minority carrier lifetime were realized. The optimized film of 75nm SiNx with reflection index of 2.05 was obtained in the production line. Source

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