China Hisun PV Technology Co.

Hengshui, China

China Hisun PV Technology Co.

Hengshui, China

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Qiao Z.,Hebei University of Technology | Qiao Z.,Shijiazhuang University | Xie X.-J.,Hebei University of Technology | Xue J.-M.,China Hisun PV Technology Co. | And 4 more authors.
Wuli Huaxue Xuebao/ Acta Physico - Chimica Sinica | Year: 2015

A series of intrinsic silicon thin films were prepared using radio- frequency plasma-enhanced chemical vapor deposition (RF-PECVD) at low temperature and low power density. We investigated the influence of silane concentration (CS) on the structural, optical, and electronic properties, and passivation quality of the intrinsic silicon films, and the performances of hydrogenated nanocrystalline silicon/crystalline silicon (nc-Si:H/ c-Si) silicon heterojunction (SHJ) solar cells. The results show that with decreasing silane concentration, substantial changes in the crystalline volume fraction, hydrogen concentration, structure factor, optical bandgap, and photosensitivity of the film take place in the transition zone. The passivation quality of intrinsic silicon thin films is decided by the hydrogen content and bonding structure of the film. Films close to the transition zone show good compactness and photosensitivities, high hydrogen content, and low state densities, and contain abundant SiH bonds. The films provide excellent passivation for c-Si surfaces and significantly enhance the open-circuit voltages of nc-Si:H/c-Si SHJ solar cells. However, the passivation quality deteriorates seriously when the film is too thin. In this work, the optimum silane concentration was found to be 6% (molar fraction). By optimizing the film thickness of the passivation layers with CS=6%, we obtained an nc-Si:H/c-Si SHJ solar cell with an open-circuit voltage of 672 mV, short-circuit current density of 35.1 mA· cm-2, fill factor of 0.73, and efficiency of 17.3%. © Editorial office of Acta Physico-Chimica Sinica.


Du P.,Hengshui University | Zhang J.,Hengshui University | Li T.,Shijiazhuang University | Xue J.,China Hisun PV Technology Co.
Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology | Year: 2015

A novel type of hydrogenated amorphous silicon germanium (a-SiGe:H) solar cells was fabricated. The novel solar cell mainly consists of the intrinsic (I), p-type (P) and n-type (N) hydrogen-terminated SiGe layers, synthesized by RF plasma enhanced chemical vapor deposition (PE-CVD). The impact of the growth conditions, including but not limited to the pressure, ratios of H2/(SiH4 + GeH4) and GeH4/(SiH4+ GeH4) flow rates, and deposition rate, on the electronic structures at the P/I and I/N interfaces was experimentally investigated. The results show that the stability of the a-SiGe:H solar cells can be significantly improved by increasing the photosensitivity of the I-layer, by reducing the interface defects, and by optimizing the buffer layers. To be specific, the I-layer's photo-sensitivity was over 105; an 8 nm thick a-SiC:B(a substitute for a-SiC) layer significantly reduced the band-gap mismatch at the P/I interface; and a V-structured, 20 nm thick buffer layer at the I/N interfaceresulted in an efficiency of 7.53% (in an active area of 0.196 cm without anti reflection coatings). ©, 2015, Science Press. All right reserved.


Qiao Z.,Hebei University of Technology | Qiao Z.,Shijiazhuang University | Xie X.,Hebei University of Technology | Hao Q.,Hebei University of Technology | And 3 more authors.
Applied Surface Science | Year: 2015

P-type hydrogenated nanocrystalline silicon (p-nc-Si:H) films were prepared by plasma-enhanced chemical vapor deposition (PECVD) at 200 °C, using diborane (B2H6) diluted in hydrogen to a concentration of 1% as the doping gas. The influence of hydrogen dilution, boron doping and layer thickness on the structural, optical and electronic properties of nc-Si:H films was systematically studied by transmission, Raman, small-angle X-ray diffraction (SAXD), high resolution transmission electron microscopy (HRTEM) and Fourier transform infrared (FTIR) spectroscopies. The 20 nm thick nc-Si film with dark conductivity of 0.005 S/cm and crystalline volume fraction of 43.89% was obtained. By employing p-nc-Si:H as emitter layers, SHJ solar cells were fabricated. It was found that fill factor (FF) was significantly improved with increasing the p-layer thickness from 10 to 20 nm. Moreover, the SHJ solar cell with Voc of 576 mV, Jsc of 34.49 mA/cm2, FF of 74.28%, and η of 16.63% was obtained. © 2014 Elsevier B.V. All rights reserved.


Wen D.,Hebei University of Technology | Lei Q.-S.,China Hisun PV Technology Co. | Qiao Z.,Hebei University of Technology | Gao M.-L.,China Hisun PV Technology Co. | And 2 more authors.
Rengong Jingti Xuebao/Journal of Synthetic Crystals | Year: 2013

The effects of substrate temperature and sputtering power on the properties of ITO thin films deposited by mid-frequency pulsed magnetron sputtering were investigated. High quality ITO thin films with the sheet resistance of 2.99 Ω/□, the resistivity as low as 1.76×10-4 Ω·cm and the optical transmittance of 82.3% in the visible spectrum range were obtained. With this optimum material, a 14.04% conversion efficiency HIT solar cells was achieved.


Qi X.-G.,Hebei University of Technology | Yang R.-X.,Hebei University of Technology | Lei Q.-S.,China Hisun PV Technology Co. | Xue J.-M.,China Hisun PV Technology Co.
Rengong Jingti Xuebao/Journal of Synthetic Crystals | Year: 2014

The influence of borane concentration and heating temperature on the properties of a-Si:H thin films deposited by RF plasma enhanced chemical vapor deposition have been studied. Under the optimum conditions p-a-Si:H thin films with wide optical bandgap, high conductivity and good microstucture were obtained. As window layers applied in HIT (heterojunction with intrinsic thin layer) solar cells, the conversion efficiency of 14.28% on N-type Si wafer was achieved by optimizing the thickness of P-layer.


Qi X.-G.,Hebei University of Technology | Lei Q.-S.,China Hisun PV Technology Co. | Yang R.-X.,Hebei University of Technology | Xue J.-M.,China Hisun PV Technology Co. | Liu J.-P.,Hebei University of Technology
Rengong Jingti Xuebao/Journal of Synthetic Crystals | Year: 2013

The a-Si:H thin films were prepared by RF plasma enhanced chemical vapor deposition at different silane concentrations, and the microstructure and photoelectric properties of the films were studied. The results implied that transition from the amorphous phase to the microcrystalline phase could be observed at silane concentration of 5%, and the thin film material have wide optical bandgap, low optical absorption coefficient, high conductivity and good microstructure. This material with good passivation was used in HIT (heterojunction with intrinsic thin layer) solar cells. The a-Si:H solar cells with conversion efficiency of 13.92% on n-type Si wafer was achieved.


Cheng B.-S.,Huazhong University of Science and Technology | Lei Q.-S.,Huazhong University of Science and Technology | Lei Q.-S.,China Hisun PV Technology Co. | Xu J.-P.,Huazhong University of Science and Technology | Xue J.-M.,China Hisun PV Technology Co.
Rengong Jingti Xuebao/Journal of Synthetic Crystals | Year: 2012

Effects of hydrogen dilution and temperature on the properties of a-SiGe:H alloys deposited by plasma-enhanced chemical vapor deposition have been studied. Under the optimum conditions high quality a-SiGe:H film with optical bandgap of 1.5 eV and photosensitivity of 6×104 is obtained. With this material a 6.65% conversion efficiency a-SiGe:H solar cells is achieved.

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