China Electronics Technology Group Corporation

www.cetc.com.cn/
Beijing, China

Time filter

Source Type

NEW YORK, May 9, 2017 /PRNewswire/ -- "The fusion splicer market is likely to grow at a CAGR of 4.72% between 2017 and 2022" The fusion splicer market was valued at USD 570.5 million in 2016 and is expected to reach USD 762.3 million by 2022, at a CAGR of 4.72%. Moreover, the fusion splicer market registered a shipment of 65,735 units in 2016 and is expected to reach 97,353 units by 2022, at a CAGR of 6.52% during the forecast period. The market growth can be attributed to several factors such as growing demand for high network bandwidth, low insertion loss, and rise in government funding. The major restraints for the fusion splicer market is the high cost for equipment. Read the full report: http://www.reportlinker.com/p04889812/Fusion-Splicer-Market-by-Offering-Hardware-Sheath-Clamps-Electrodes-Electric-ARC-CO2-Laser-Cleaver-and-Stripper-and-Software-Services-Alignment-Type-Core-and-Cladding-Alignment-Application-and-Geography-Global-Forecast-to.html "The fusion splicer market for enterprise application is expected to grow at a high rate during the forecast period" The enterprise application is currently exhibiting a rapid adoption of fiber optic cables. Currently, many enterprises in China are engaged in developing new information infrastructures, which would include a huge number of fiber optic cables. This factor is indirectly expected to drive the growth of fusion splicer market in the enterprise application. "The fusion splicer market in APAC is expected to grow at the highest rate during the forecast period" The need of high network bandwidth in the telecom sector acts as driving force for the growth of the fusion splicer market. The extensive development of telecommunication and broadband networks in Asia Pacific (APAC) has led to the increasing growth in the fiber optic market in this region, thereby increasing the demand for the fusion splicer. The countries considered in APAC are China, Japan, India, Malaysia, and Rest of APAC. The APAC holds the largest share of the fusion splicer market as there is strong support for fusion splicer development from the Chinese and Indian government. Breakdown of primary participants' profile by different parameters: • By Company Type: Tier 1 – 50%, Tier 2– 33%, and Tier 3 – 17% • By Designation: C-Level Executives – 50%, Directors – 33%, and Others – 17% • By Region: Americas – 33%, Europe – 17%, and APAC – 50% The key players operating in this market are Sumitomo Electric Industries (Japan), Furukawa Electric Co. Ltd. (Japan), Fujikura Ltd. (Japan), ILSINTECH CO., LTD. (Korea), INNO Instruments Inc. (Korea), Darkhorsechina (Beijing) Telecom. Tech. Co., Ltd. (China), China Electronics Technology Group Corporation (China), Nanjing Jilong Optical Communication Co.,,LTD. (China), Nanjing DVP O.E. TECH. CO., LTD. (China), Shenzhen Ruiyan Communication Equipment Co., LTD (China). Research Coverage: In this report, various segments such as offering, alignment type, application, and geography have been covered. The report also discusses the drivers, restraints, opportunities, and challenges for the market. The report provides a detailed view of the market across four main regions—the Americas, Europe, Asia Pacific (APAC), and Rest of the World (RoW). The competitive analysis section has been included in the report, which provides information about the vanguards, innovators, dynamic and emerging players. Reasons to Buy the Report: • This report includes the statistics pertaining to the fusion splicer market in terms of offering, alignment type, application, and geography, along with their respective market size (in terms of value for the hardware segment). • Competitive analysis section that provides information about the vanguards, innovators, dynamic, and emerging players in the fusion splicer market. • Major drivers, restraints, opportunities, and challenges for the fusion splicer market have been provided in detail in this report. • The report includes the illustrative segmentation, analysis, and forecast of the fusion splicer market based on its segments and subsegments. Read the full report: http://www.reportlinker.com/p04889812/Fusion-Splicer-Market-by-Offering-Hardware-Sheath-Clamps-Electrodes-Electric-ARC-CO2-Laser-Cleaver-and-Stripper-and-Software-Services-Alignment-Type-Core-and-Cladding-Alignment-Application-and-Geography-Global-Forecast-to.html About Reportlinker ReportLinker is an award-winning market research solution. Reportlinker finds and organizes the latest industry data so you get all the market research you need - instantly, in one place. http://www.reportlinker.com __________________________ Contact Clare: clare@reportlinker.com US: (339)-368-6001 Intl: +1 339-368-6001 To view the original version on PR Newswire, visit:http://www.prnewswire.com/news-releases/fusion-splicer-market-by-offering-hardware-sheath-clamps-electrodes-electric-arc-co2-laser-cleaver-and-stripper-and-software--services-alignment-type-core-and-cladding-alignment-application-and-geography---global-f-300454551.html


Patent
China Electronics Technology Group Corporation | Date: 2013-04-03

The present disclosure provides a method for manufacturing a particle source, comprising: placing a metal wire in vacuum, introducing active gas and catalyst gas, adjusting a temperature of the metal wire, and applying a positive high voltage V to the metal wire to dissociate the active gas at the surface of the metal wire, in order to generate at a peripheral surface of the head of the metal wire an etching zone in which field induced chemical etching (FICE) is performed; increasing by the FICE a surface electric field at the apex of the metal wire head to be greater than the evaporation field of the material for the metal wire, so that metal atoms at the wire apex are evaporated off; after the field evaporation is activated by the FICE, causing mutual adjustment between the FICE and the field evaporation, until the head of the metal wire has a shape of combination of a base and a tip on the base, wherein the FICE occurs at the lateral side of the metal wire head to form the base, and the field evaporation occurs at the apex of the metal wire head to form the tip; and stopping the FICE and the field evaporation when the head of the metal wire takes a predetermine shape.


Patent
China Electronics Technology Group Corporation | Date: 2013-08-21

The present disclosure provides a method for manufacturing a particle source comprising: placing a metal wire in vacuum, introducing active gas, adjusting a temperature of the metal wire and applying a positive high voltage V to the metal wire to generate at a side of the head of the metal wire an etching zone in which field induced chemical etching (FICE) is performed; increasing by the FICE a surface electric field at the top of the metal wire head to be greater than a field evaporation electric field of material for the metal wire, so that metal atoms at the top of the metal wire are evaporated off; after the field evaporation is activated by the FICE, causing mutual adjustment between the FICE and the field evaporation, until the head of the metal wire has a shape of combination of a base and a tip on the base; and stopping the FICE and the field evaporation when the head of the metal wire takes a predetermine shape.


Patent
China Electronics Technology Group Corporation | Date: 2012-02-17

Disclosed is a refined white ceramic material, which belongs to the field of ceramic materials for component packaging, and comprises the following raw materials by weight in percentage: aluminum oxide 87-93, magnesium oxide 0.8-5, silicon dioxide 1-6, calcium oxide 0.6-4, titanium dioxide 0.01-0.5, and zirconium dioxide 0.5-3. The method for preparing same comprises: (1) washing aluminum oxide grinding balls and a ball-milling tank, and drying for later use; (2) weighing a solvent NP-10 of 0.5-4 by weight in percentage, and adding the solvent into the ball-milling tank; (3) weighing raw materials, adding the raw materials into the ball-milling tank, and performing ball milling for 720.5 h. By means of the refined white ceramic material of the present invention, the obtained ceramic grains have even sizes, small surface roughness, and high fracture resistance performance of ceramic body.


Patent
China Electronics Technology Group Corporation | Date: 2012-05-04

The present disclosure provides a method for manufacturing a particle source comprising: placing a metal wire in vacuum, introducing active gas, adjusting a temperature of the metal wire and applying a positive high voltage V to the metal wire to generate at a side of the head of the metal wire an etching zone in which field induced chemical etching (FICE) is performed; increasing by the FICE a surface electric field at the top of the metal wire head to be greater than a field evaporation electric field of material for the metal wire, so that metal atoms at the top of the metal wire are evaporated off; after the field evaporation is activated by the FICE, causing mutual adjustment between the FICE and the field evaporation, until the head of the metal wire has a shape of combination of a base and a tip on the base; and stopping the FICE and the field evaporation when the head of the metal wire takes a predetermine shape.


Patent
China Electronics Technology Group Corporation | Date: 2015-04-01

Disclosed is an amplifier circuit with cross wiring of direct-current signals and microwave signals. The circuit includes a circuit network unit formed of a direct-current feeding circuit and a microwave power signal circuit. The direct-current feeding circuit starts from a high-electron-mobility transistor (HEMT) drain power-up bonding point (211), and is connected to a feeding end of a tail-level HEMT transistor core (250) via a corresponding line after being connected to a first Metal-Insulator-Metal (MIM) capacitor (221) in parallel, and connected to a first micro-strip inductor (222) and symmetrical branch micro-strips (223) in series, the branch micro-strips (223) being connected to one of electrodes of second MIM capacitors (231, 234) in series. The microwave power signal circuit starts from a signal end of the tail-level HEMT transistor core (250), is combined into two paths by a corresponding line, the two paths being respectively connected to two third MIM capacitors (241, 242) in parallel, being respectively connected to the other electrode of the second MIM capacitors (231, 234) in series, being respectively connected to ground micro-strip inductors (232, 235) in parallel and respectively connected to second micro-strip inductors (233, 236) in series, and being combined into one path to be connected to a third micro-strip inductor (238), and is output by a fourth MIM capacitor (239) connected in parallel. This solution reduces the tuning allowance of a matching network, improves the output impedance of a combined port, improves a chip space utilization rate, improves heat dissipation performance, and improves power density.


Patent
China Electronics Technology Group Corporation | Date: 2013-01-16

The present disclosure provides a particle source comprising a base having a gently-shaped top, and a tip formed as a tiny protrusion on the top of the base.


Patent
China Electronics Technology Group Corporation | Date: 2012-06-19

Provided is an amplifier circuit with cross wiring of direct-current signals and microwave signals, which includes: two branch sub-circuits being mirrors with each other and a third capacitor The sub-circuit includes a direct-current feeding circuit and a microwave signal circuit. The direct-current feeding circuit further comprising: a transistor core drain power-up port (Vds) of a heterojunction field effect transistor (FET), a first micro-strip inductor, a first capacitor, a pair of third inductors, a pair of branched second inductors. The microwave signal circuit further comprising: A pair of third inductors, a pair of first capacitors, a pair of second capacitors, a pair of ground inductors, a pair of fourth inductors, a serially connected fifth inductor.


Patent
China Electronics Technology Group Corporation | Date: 2013-07-04

A method for manufacturing a graphene transistor based on self-aligning technology, the method comprising: on a substrate (1), forming sequentially graphene material (4), a metal film (5), and photoresist patterns (6) formed by lithography, removing the metal film and the graphene material uncovered by the photoresist, forming an active area, and metal electrodes (7, 8, 9) of a source, a gate, and a drain of the transistor, wherein the source electrode 7 and drain electrode 9 are connected with a metal of the active region, and forming gate photoresist patterns (10) between the source and the drain by lithography, etching off the exposed metal, forming sequentially a seed layer (11), a gate dielectric layer (12), and gate metal (13) on the exposed graphene surface, and finally forming a graphene transistor.


Patent
China Electronics Technology Group Corporation | Date: 2015-04-01

Provided is an amplifier circuit with cross wiring of direct-current signals and microwave signals, which includes: two branch sub-circuits (201, 202) being mirrors with each other and a third capacitor (2101) connected in parallel to an output end. The sub-circuit includes a direct-current feeding circuit and a microwave signal circuit. A transistor core drain power-up port (Vds) of a heterojunction field effect transistor (FET) of the direct-current feeding circuit is connected to a first micro-strip inductor (241) in series after passing through a first capacitor (281) connected in parallel, is respectively connected to one of a pair of third inductors (211, 212) in series by a pair of branched second inductors (231, 232), and is respectively connected to a transistor core drain port of the heterojunction FET. A pair of third inductors (211, 212) of the microwave signal circuit is respectively connected to one of a pair of first capacitors (251, 252) in series after respectively passing through one of a pair of second capacitors (221, 222) connected in parallel, is respectively connected to one of a pair of ground inductors (261, 262) in parallel, is respectively connected to one of a pair of fourth inductors (271, 272) in series, and is combined to be connected to an output end through a serially connected fifth inductor (291). The circuit has low sensitivity and a symmetrical circuit structure. Without a severely discontinuous region of an electromagnetic field, the layout density and the chip space utilization rate can be improved.

Loading China Electronics Technology Group Corporation collaborators
Loading China Electronics Technology Group Corporation collaborators