Grushka O.G.,Chernivtsy State University |
Savchuk A.I.,Chernivtsy State University |
Chupyra S.M.,Chernivtsy State University |
Mysliuk O.M.,Chernivtsy State University |
And 2 more authors.
Semiconductors | Year: 2014
The results of studying the electrical and photoelectric properties of Hg3In2Te6 bulk crystals with stoichiometric composition and of Hg3(1 + δ)In2(1 − δ)Te6 crystals with a deviation from the stoichiometric composition of δ = ±0.06 are reported. It is shown that variations in the ratio between the Hg and In components in the crystals yield an increase in the concentration of mutually compensating donors and acceptors which barely affect the position of the donor level in the band gap (the level energy is ED = Ec − (0.18 ± 0.02) eV, but determine the photoconductivity spectrum near the fundamental absorption edge. An expression for the wavelength dependence of the photocurrent and the parameters of nonequilibrium charge carriers are presented to describe the experimental data. © 2014, Pleiades Publishing, Ltd.