Changchun Institute of Optical

Changchun, China

Changchun Institute of Optical

Changchun, China
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Wang X.-J.,Changchun Institute of Optical | Wang X.-J.,University of Chinese Academy of Sciences | Song H.,Changchun Institute of Optical | Li D.-B.,Changchun Institute of Optical | And 5 more authors.
Faguang Xuebao/Chinese Journal of Luminescence | Year: 2012

This paper deals with the characteristics of aluminium nitride (AlN) films doped by silicon (Si) thermal diffusion. The films are analyzed by energy dispersive X-ray spectroscopy (EDS) and high-temperature dependent electrical conductivity. The results of EDS show that the Si element is successfully doped into the AlN films using SiN x as the diffusion source at the temperature of 1250°C. The high-temperature current-voltage (I-V) measurements show that the electrical properties of the AlN films can be prominently improved by Si thermal diffusion, and at the measured temperature of 460°C their electrical conductivities increase from 1.9×10 -3 S·m -1 to 2.1×10 -2 S·m -1 after the Si thermal diffusion. The high-temperature dependence of thermal conductivity suggests that the activation energies of V N 3+ and Si are about 1.03 eV and 0.45 eV, respectively.

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