Ohashi W.,Ceramics and Metals Research Laboratory |
Sakamoto H.,Ceramics and Metals Research Laboratory |
Tanaka M.,Ceramics and Metals Research Laboratory |
Fujimoto T.,Ceramics and Metals Research Laboratory |
And 2 more authors.
Nippon Steel Technical Report | Year: 2012
The most important thing to develop next is packaging technology that allows for operation of the elements under high temperatures to improve the efficiency of electrical energy use by SiC power devices. Specifically, future development of packaging technology for heat-resistant die attaches, device electrodes, wiring, connectors, sealers and radiators is awaited. Since the early 1990s, from the standpoint of further enhancing the efficiency of electrical energy utilization to cope with the everincreasing demand for electricity, Nippon Steel, with its eye on the superior properties realizable by SiC over Si, has been developing large, high-quality, single SiC crystals as a new high-performance power device material in order to replace Si, because Si-based devices were fast reaching the operating property limit determined by the intrinsic material properties of Si.