Entity

Time filter

Source Type

Blaubeuren, Germany

centrotherm photovoltaics AG is a supplier of process technology and equipment for the photovoltaics, semiconductor and microelectronics industries. Its company headquarters are in Blaubeuren, Germany . Wikipedia.


In a method for producing a solar cell, a layer stack of dielectric layers is applied to a back of a solar cell substrate and the layer stack is heated and is held at temperatures of at least 700 C. during a time period of at least 5 minutes. The novel solar cell has a layer stack of dielectric layers on its back. At least one of the dielectric layers of the layer stack is densified so that its resistivity to firing-through of pastes with glass components is enhanced.


Patent
Centrotherm Photovoltaics AG | Date: 2011-12-16

The application describes an apparatus and a method for the thermal treatment of substrates, in particular thin film substrates for photovoltaic applications. The apparatus comprises at least one substrate carrier for supporting a substrate, a heating unit having at least one heating element for heating a substrate located on the substrate carrier and at least one heating element carrier for supporting the at least one heating element. The heating element carrier is designed to allow a local change in distance between the substrate carrier and the heating element, so as to be able to provide locally different heating intensities. In the method such a change in distance is carried out during the thermal treatment.


Patent
Centrotherm Photovoltaics AG | Date: 2012-08-01

A device for doping, deposition or oxidation of semiconductor material at low pressure in a process tube, is provided with a tube closure as well as devices for supplying and discharging process gases and for generating a negative pressure in the process tube. A closure of the process chamber that is gas tight with respect to the process gases and the vacuum tight seal of the end of the tube closure are spatially separated from each other in relation to the atmosphere and are arranged on a same side of the process tube in such a manner that a bottom of a stopper, sealing the process chamber, rests against a sealing rim of the process tube and the tube closure end is sealed vacuum tight by a collar, which is attached to the process tube and against which a door rests sealingly.


Patent
Centrotherm Photovoltaics AG | Date: 2013-11-11

A substrate holder having a plate element for receiving a substrate. The plate element comprises at least one recess in a first side of the plate element as well as a plurality of spacers in the at least one recess, at least one opening, which is fluidly connected to the recess and which may be connected to an external gas delivery/exhaust unit, at least one notch or channel, which radially surrounds the recess, at least one opening, which is fluidly connected to the notch or channel and may be connected to an external gas delivery/exhaust unit, a circumferential web, which radially surrounds the recess and is located between the recess and the notch or channel, and circumferential contact surfaces for the substrate, wherein a first circumferential contact surface is formed on the upper side of the web and radially surrounds the recess, such that a substrate abutting against the first contact surface forms an enclosed chamber with the recess, and a second circumferential contact surface, which radially surrounds the notch or channel.


Patent
Centrotherm Photovoltaics AG | Date: 2015-08-12

A method and an arrangement for providing chalcogens as thin layers on substrates, in particular on planar substrates prepared with precursor layers and composed of any desired materials, preferably on substrates composed of float glass, is achieved by forming an inlet- and outlet-side gas curtain for an oxygen-tight closure of a transport channel in a vapour deposition head, introducing an inert gas into the transport channel for displacing atmospheric oxygen, introducing one or more substrates to be coated, the substrates being temperature-regulated to a predetermined temperature, into the transport channel, introducing a chalcogen vapour/carrier gas mixture from a source into the transport channel at the vapour deposition head above the substrates and forming a selenium layer on the substrates by PVD at a predetermined pressure, and removing the substrates after a predetermined process time has elapsed.

Discover hidden collaborations