Centrotherm Photovoltaics AG | Date: 2015-03-31
The invention describes an apparatus and a method for soldering mating parts, in particular electrical components to circuit boards or other carrier elements. The mating parts may be received and pressed together between two plate elements. One of the plate elements, which is heatable, may be flexible and may be elastically biased in the direction of the other plate element, by means of a plurality of elastically biased elements. Alternatively or additionally, heating may be provided for both plate elements.
Centrotherm Photovoltaics AG | Date: 2017-02-08
The invention describes an apparatus (1) and a method for soldering joining partners, in particular electrical components on printed circuit boards or other substrate elements. The joining partners can be received and pressed together between two plate elements (30, 31). One of the plate elements (31), which is heatable, can be flexible and can be elastically prestressed in the direction of the other plate element (30) by way of a multiplicity of elastically prestressed elements (62, 63). As an alternative or in addition, it is possible to provide a heating system (44, 48) for both plate elements (30, 31).
Centrotherm Photovoltaics AG and Hq Dielectrics Gmbh | Date: 2014-08-22
Disclosed are a method and an apparatus for the detection of a plasma in a process chamber for the treatment of substrates. In the method, the pressure within the chamber is measured over a period of time using a pressure sensor, a sudden change in pressure is detected and an ignition or extinguishing of a plasma determined at least by means of the pressure change. The apparatus comprises a process chamber, for receiving at least one substrate, with at least one plasma generator, at least one pressure sensor which is situated so as to detect the pressure within the process chamber and output an output signal corresponding to the pressure, and at least one evaluation unit. The evaluation unit is capable of monitoring over a period of time an output signal from the pressure sensor and, on the basis of at least one sudden change in the output signal of the pressure sensor, of determining an ignition and/or an extinguishing of a plasma.
Centrotherm Photovoltaics AG and Hq Dielectrics Gmbh | Date: 2013-03-15
An apparatus and a method for determining the temperature of a substrate, in particular of a semiconductor substrate during the heating thereof by means of at least one first radiation source are disclosed. A determination of the temperature is based on detecting first and second radiations, each comprising radiation emitted by the substrate due to its own temperature and radiation emitted by the first radiation, which is reflected at the substrate and at least one of a drive power of the first radiation source and the radiation intensity of the first radiation source.
Centrotherm Photovoltaics AG | Date: 2015-08-12
A method and an arrangement for providing chalcogens as thin layers on substrates, in particular on planar substrates prepared with precursor layers and composed of any desired materials, preferably on substrates composed of float glass, is achieved by forming an inlet- and outlet-side gas curtain for an oxygen-tight closure of a transport channel in a vapour deposition head, introducing an inert gas into the transport channel for displacing atmospheric oxygen, introducing one or more substrates to be coated, the substrates being temperature-regulated to a predetermined temperature, into the transport channel, introducing a chalcogen vapour/carrier gas mixture from a source into the transport channel at the vapour deposition head above the substrates and forming a selenium layer on the substrates by PVD at a predetermined pressure, and removing the substrates after a predetermined process time has elapsed.
Centrotherm Photovoltaics AG | Date: 2014-06-05
A retainer has a coating composed of silicon carbide, glassy carbon or pyrolytic carbon on its surface. A method for producing the retainer and the use of the retainer in a plasma-driven vapor deposition are also provided.
Centrotherm Photovoltaics AG | Date: 2012-10-17
An apparatus for determining the temperature of a substrate, in particular of a semiconductor wafer during a heating thereof by means of a first radiation source is described. Furthermore, an apparatus and a method for thermally treating substrates are described, in which the substrate is heated by means of at least one first radiation source. The apparatus comprises a first grating structure having grating lines, which are opaque with respect to a substantial portion of the radiation of the first radiation source, wherein the grating structure is arranged between the first radiation source and the substrate, and a drive unit for moving the first grating structure. Furthermore, a first radiation detector is provided, which is directed directly onto the surface of the substrate facing the grating structure, and a device for determining radiation emitted by the substrate due to its own temperature and for determining the temperature of the substrate on the basis of the radiation detected by the first radiation detector.
Centrotherm Photovoltaics AG | Date: 2014-12-19
A wafer boat for receiving wafers, in particular semiconductor wafers, includes at least two elongated receiving elements made of quartz, each receiving element having a plurality of parallel receiving slots, which extend transverse to the longitudinal extension of the receiving elements, and two end plates, between which the receiving elements are arranged and attached such that the receiving slots of the receiving elements are aligned. For increasing the stability, the wafer boat includes a plurality of attachment pieces, via which the receiving elements are attached to the end plates, wherein each attachment piece has a circumference which is at least 1.5 times as large as the circumference of a receiving section of the receiving elements comprising the receiving slots, and wherein each attachment piece is welded or bonded to at least one of the following: an end plate and a receiving element. In a further embodiment, which may be combined with the above, the receiving elements each have at least one relaxation slot adjacent to the end plates, preferably at least two relaxation slots having a depth, which is smaller than the depth of the receiving slots. When at least two relaxation slots are provided, the depth thereof increases with increased distance to the end plates.
Centrotherm Photovoltaics AG | Date: 2013-11-11
A substrate holder having a plate element for receiving a substrate. The plate element comprises at least one recess in a first side of the plate element as well as a plurality of spacers in the at least one recess, at least one opening, which is fluidly connected to the recess and which may be connected to an external gas delivery/exhaust unit, at least one notch or channel, which radially surrounds the recess, at least one opening, which is fluidly connected to the notch or channel and may be connected to an external gas delivery/exhaust unit, a circumferential web, which radially surrounds the recess and is located between the recess and the notch or channel, and circumferential contact surfaces for the substrate, wherein a first circumferential contact surface is formed on the upper side of the web and radially surrounds the recess, such that a substrate abutting against the first contact surface forms an enclosed chamber with the recess, and a second circumferential contact surface, which radially surrounds the notch or channel.
Centrotherm Photovoltaics AG | Date: 2014-06-13
A measuring object for use in a heating apparatus for the thermal treatment of substrates is described, wherein the measuring object is the substrate to be treated or an object which in use has a substantially known temperature relation to the substrate to be treated, wherein the measuring object comprises a surface having at least one surface area, which acts as a measuring surface for an optical temperature measurement. A predetermined structure in the form of a plurality of recessions is formed in the surface area, in order to influence the emissivity of the surface area.