Leon J.,Center Nacional Of Microelectronica Imb Cnm Csic Campus Uab |
Perpina X.,Center Nacional Of Microelectronica Imb Cnm Csic Campus Uab |
Vellvehi M.,Center Nacional Of Microelectronica Imb Cnm Csic Campus Uab |
Jorda X.,Center Nacional Of Microelectronica Imb Cnm Csic Campus Uab |
And 2 more authors.
Journal of Physics D: Applied Physics | Year: 2014
A nickel-based silicon carbide Schottky barrier diode presenting multibarrier behaviour was inspected by Small sIgnal Modulation for Thermal Analysis (SIMTA) to detect the weak spots responsible for this behaviour. SIMTA thermally modulates in frequency such weak spots with a small signal voltage while the device is electrically biased in an operating point of its static I/V curve (20 A-1 kV capability). This allows for quantitative studying of them in a thermal steady state as heat sources by lock-in thermography depending on the device operating regime. Using SIMTA, the barrier height and the area of each weak spot were determined by thermal means, yielding to an electrical model that fits the observed multibarrier behaviour. Results suggest that these spots were caused by surface areas of high density of states (due to 3C-SiC stacking faults) created during the wire bonding process, which locally shifted the Schottky barrier due to Fermi level pinning. Their origin was confirmed by scanning electron microscope inspections after milling these locations with a focused on beam, detecting Schottky metal contact degradation at weak spot locations due to an excessive bonding pressure. © 2014 IOP Publishing Ltd. Source