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Bastos R.P.,French National Center for Scientific Research | Dutertre J.-M.,Center Microelectronique Of Provence Georges Charpak | Torres F.S.,Federal University of Minas Gerais
2014 5th European Workshop on CMOS Variability, VARI 2014 | Year: 2014

Several architectures of Bulk Built-In Current Sensors (BBICS) were recently proposed to monitor transient faults induced on integrated circuits by radiation or malicious sources. This work compares for the first time all existing static BBICS architectures in terms of their sensitivities to detect transient faults. In addition, we propose a new static BBICS that presents better results of transient-fault detection sensitivity than previous sensor architectures. © 2014 IEEE. Source


Bastos R.P.,Grenoble Institute of Technology | Torres F.S.,Federal University of Minas Gerais | Dutertre J.-M.,Center Microelectronique Of Provence Georges Charpak | Flottes M.-L.,CNRS Montpellier Laboratory of Informatics, Robotics and Microelectronics | And 2 more authors.
Proceedings of the 2013 IEEE International Symposium on Hardware-Oriented Security and Trust, HOST 2013 | Year: 2013

This work presents a novel scheme of built-in current sensor (BICS) for detecting transient fault-based attacks of short and long duration as well as from different simultaneous sources. The new sensor is a single mechanism connected to PMOS and NMOS bulks of the monitored logic. The proposed protection strategy is also useful for improving any state-of-the-art Bulk-BICS from pairs of PMOS and NMOS sensors to single sensors. © 2013 IEEE. Source


Dutertre J.M.,Center Microelectronique Of Provence Georges Charpak | Possamai Bastos R.,French National Center for Scientific Research | Potin O.,Center Microelectronique Of Provence Georges Charpak | Flottes M.L.,French National Center for Scientific Research | And 3 more authors.
Microelectronics Reliability | Year: 2014

Bulk Built-In Current Sensors (bbicss) were introduced to detect the anomalous transient currents induced in the bulk of integrated circuits when hit by ionizing particles. To date, the experimental testing of only one bbics architecture was reported in the scientific bibliography. It reports an unexpected weakness in its ability to monitor nmos transistors. Based on experimental measures, we propose an explanation of this weakness and also the use of triple-well cmos to offset it. Further, we introduce a new bbics architecture well suited for triple-well that offers high detection sensitivity and low area overhead. © 2014 Elsevier Ltd. All rights reserved. Source


Sarafianos A.,STMicroelectronics | Sarafianos A.,Center Microelectronique Of Provence Georges Charpak | Roscian C.,Center Microelectronique Of Provence Georges Charpak | Dutertre J.-M.,Center Microelectronique Of Provence Georges Charpak | And 2 more authors.
Microelectronics Reliability | Year: 2013

This abstract presents an electrical model of an SRAM cell exposed to a pulsed Photoelectrical Laser Stimulation (PLS), based on our past model of MOS transistor under laser illumination. The validity of our model is assessed by the very good correlation obtained between measurements and electrical simulation. These simulations are capable to explain some specific points. For example, in theory, a SRAM cell under PLS have four sensitive areas. But in measurements only three areas were revealed. A hypothesis was presented in this paper and confirmed by electrical simulation. The specific topology of the cell masks one sensitive area. Therefore the electrical model could be used as a tool of characterization of a CMOS circuits under PLS. © 2013 Elsevier Ltd. All rights reserved. Source

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