Time filter

Source Type

Xenidou T.C.,National Technical University of Athens | Prud'Homme N.,Center Interuniversitaire Of Recherche Et Dingnierie Des Matriaux | Prud'Homme N.,University Paris - Sud | Vahlas C.,Center Interuniversitaire Of Recherche Et Dingnierie Des Matriaux | And 2 more authors.
Journal of the Electrochemical Society | Year: 2010

An improved reactive transport model of a metallorganic chemical vapor deposition process for the growth of aluminum films from dimethylethylamine alane is developed. The computational fluid dynamics model is built under PHOENICS software for the simulation of the coupled fluid flow, heat transfer, and chemistry. The growth mechanism of aluminum films is based on well-established, in the literature, reaction order and activation energy of gas-phase and surface reactions. The improvement of the model against a simplified model is established. The interplay of reaction and transport is elucidated. In particular, the important effects of the gas-phase reaction and of the showerhead system are revealed; accounting for gas-phase along with surface reactions for the flow details in the showerhead and for the three-dimensional geometry induced by the distribution of the holes in the showerhead yields substantial enhancement of the predictive capability of the model. The satisfactory agreement between model predictions and growth-rate measurements allows one to understand and improve the process. The model is further used to investigate the effect of key operating parameters on the characteristics of the aluminum films. Simulation results are suggestive of modifications in the operating parameters that could enhance the growth rate and its spatial uniformity. © 2010 The Electrochemical Society.


Krisyuk V.,Center Interuniversitaire Of Recherche Et Dingnierie Des Matriaux | Krisyuk V.,RAS Nikolaev Institute of Inorganic Chemistry | Gleizes A.N.,Center Interuniversitaire Of Recherche Et Dingnierie Des Matriaux | Aloui L.,Center Interuniversitaire Of Recherche Et Dingnierie Des Matriaux | And 10 more authors.
Journal of the Electrochemical Society | Year: 2010

Iron bis(N, N′ -diisopropylacetamidinate) [Fe2 (μ- iP r-MeAMD)2 (η2 - iP r-MeAMD)2] and iron bis(N, N′ -di-tert-butylacetamidinate) [Fe (tB u-MeAMD)2] were used as precursors for the metallorganic chemical vapor deposition (MOCVD) of iron-containing compounds including pure iron, iron carbides, Fe3 C and Fe4 C, and iron nitrides Fe4 C. Their decomposition mechanism involves hydrogen migration followed by dissociation of the Fe-N bond and the release of free hydrogenated ligand (HL) and radicals. Surface intermediates are either released or decomposed on the surface providing Fe-N or Fe-C bonds. MOCVD experiments were run at 10 Torr, in the temperature ranges of 350-450°C with Fe 2 (μ- iP r-MeAMD)2 (η2 - iP r-MeAMD)2 and 280-350°C with Fe (tB u-MeAMD)2. Films prepared from Fe2 (μ- iP r-MeAMD)2 (η2 - iP r-MeAMD)2 contain Fe, Fe3 C, and Fe4 C. Those prepared from Fe (tB u-MeAMD)2 contain Fe, Fe3 C, and also Fe4 C or Fe4 N, depending on the temperature and hydrogen to precursor ratio (H/P) in the input gas. The room-temperature coercive field of films processed from Fe (tB u-MeAMD)2 is 3 times higher than that of the high temperature processed Fe4 N films. © 2010 The Electrochemical Society.

Loading Center Interuniversitaire Of Recherche Et Dingnierie Des Matriaux collaborators
Loading Center Interuniversitaire Of Recherche Et Dingnierie Des Matriaux collaborators