Center for Surface and Vacuum Research

Moscow, Russia

Center for Surface and Vacuum Research

Moscow, Russia

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Filippov M.N.,Moscow Institute of Physics and Technology | Gavrilenko V.P.,Moscow Institute of Physics and Technology | Kovalchuk M.V.,RAS Research Center Kurchatov Institute | Mityukhlyaev V.B.,Center for Surface and Vacuum Research | And 3 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2012

We propose a new type of reference material as a magnification standard of transmission electron microscope and a scanning transmission electron microscope. The reference material represents a thin cross-section of a silicon relief structure with certified sizes of its elements. It is fabricated using ion milling. Such reference material can be used for high microscope magnifications (by direct observation of the lattice), as well as for moderate magnifications (around 30,000 times). © 2012 SPIE.


Gavrilenko V.P.,Moscow Institute of Physics and Technology | Zhikharev E.N.,Russian Academy of Sciences | Danilova M.A.,Center for Surface and Vacuum Research | Kal'Nov V.A.,Russian Academy of Sciences | And 6 more authors.
Russian Microelectronics | Year: 2010

Solitary silicon nanorelief elements with different widths are studied with the use of a scanning electron microscope (SEM). From the video signal curves obtained in the secondary-slow-electron mode of SEM measurements, the dependences of the length of check segments G p (D ef) and L p (D ef), where D ef is the effective diameters of the SEM probe, are determined. The dependences are found to be linear for all four solitary protrusions, and as D ef is increased, the length G p increases and the length L p decreases. It is shown that the method of defocusing the SEM electron probe provides a means for determining the linear dimension of nanorelief elements with a near-rectangular profile by extrapolating the linear dependences G p (D ef) and L p (D ef) to D ef = 0. It is established that the invariant check segment representative of the linear dimension of a particular relief element is at the level (sl)aver = 0.80 ± 0.03 for silicon elements with different widths. © 2010 Pleiades Publishing, Ltd.


Dyukov V.G.,Laboratory for Microparticle Analysis | Mityukhlyaev V.B.,Center for Surface and Vacuum Research | Stebelkov V.A.,Laboratory for Microparticle Analysis | Khoroshilov V.V.,Laboratory for Microparticle Analysis
Journal of Surface Investigation | Year: 2015

The results of elemental analysis of the dioxide uranium bulk samples and microparticles of different sizes are collated. Analyses are performed with a scanning electron microscope equipped with an X-ray energy dispersive microanalyzer (INCA X-act, Oxford Instruments, United Kingdom). The concentrations were calculated using a preinstalled program for bulk samples based on the XPP Matrix Correction algorithm. Concentrations of uranium in bulk samples and in microparticles, which were measured at accelerating voltages 6–8 kV, are practically the same down to particle size of 0.5 µm if the analyzed surfaces have no evident roughness. It is shown that accuracy indicators can be significantly improved for the analysis of particles characterized by irregular shape and surface roughness, if their surfaces are smoothed previously by a focused ion beam. The uncertainty in determination the uranium concentration in dioxide uranium particles is reduced from 10% to 2% after smoothing of their surface by the ion beam. © 2015, Pleiades Publishing, Ltd.


Filippov M.N.,Moscow Institute of Physics and Technology | Gavrilenko V.P.,Moscow Institute of Physics and Technology | Kovalchuk M.V.,RAS Research Center Kurchatov Institute | Mityukhlyaev V.B.,Center for Surface and Vacuum Research | And 5 more authors.
Measurement Science and Technology | Year: 2011

We propose a new type of reference material as a magnification standard of a transmission electron microscope (TEM) and a scanning transmission electron microscope. The reference material represents a thin cross-section of a silicon relief structure with certified sizes of its elements. It is fabricated using ion milling. Such reference material can be used for high microscope magnifications (by direct observation of the lattice), as well as for moderate magnifications (around 30 000 times). © 2011 IOP Publishing Ltd.


Filippov M.N.,Moscow Institute of Physics and Technology | Gavrilenko V.P.,Moscow Institute of Physics and Technology | Mityukhlyaev V.B.,Center for Surface and Vacuum Research | Rakov A.V.,Center for Surface and Vacuum Research | Todua P.A.,Moscow Institute of Physics and Technology
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2013

New results for dimensional measurements of nanostructures obtained using the method of defocusing of the SEM electron probe are presented. The method is extended to nanostructures representing the protrusions of the trapezoidal form with the small size of the top base and the features (protrusions and trenches) with nearly vertical sidewalls. It is also shown that the method can be applied for measurements of geometric parameters of features located on resist masks as well as of individual nanoparticles. © 2013 Copyright SPIE.


Filippov M.N.,Moscow Institute of Physics and Technology | Gavrilenko V.P.,Moscow Institute of Physics and Technology | Mityukhlyaev V.B.,Center for Surface and Vacuum Research | Rakov A.V.,Center for Surface and Vacuum Research | Todua P.A.,Moscow Institute of Physics and Technology
Measurement Science and Technology | Year: 2014

In this paper, we propose a new method of measuring parameters of features of relief nanostructures. The method is based on the dependence of the length of the control intervals between certain bend points on video signal curves on the effective diameter of an electron probe. These video signals are obtained in the secondary electron imaging mode of a scanning electron microscope. Variation of the effective diameter of the electron probe is achieved by changing the microscope focus. The above dependences can be approximated by linear functions for a number of relief nanostructures, including the pitch structures of single crystal silicon with various profiles of the relief features, resist masks, etc. For appropriate choice of control intervals, the use of a constant term in such linear functions enables one to determine the size of relief features. © 2014 IOP Publishing Ltd.


Filippov M.N.,RAS Institute of Chemistry | Novikov Yu.A.,RAS A.M. Prokhorov General Physics Institute | Rakov A.V.,Center for Surface and Vacuum Research | Todua P.A.,Center for Surface and Vacuum Research
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2010

The new method of measurement of linear sizes of nanorelief elements is presented. The applicability of this method to linear measurements of nanorelief elements with trapezoid profile and wide and small inclination angles of side walls is demonstrated. The results of developed method and direct measurements are compared. Examples of measurements of linear sizes of relief pitch structures are given. © 2010 Copyright SPIE - The International Society for Optical Engineering.


Gavrilenko V.P.,Moscow Institute of Physics and Technology | Novikov Yu.A.,RAS A.M. Prokhorov General Physics Institute | Rakov A.V.,Center for Surface and Vacuum Research | Todua P.A.,Moscow Institute of Physics and Technology
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2010

We consider features and restrictions of ellipsometry as applied to the system consisting of a silicon dioxide film on silicon, which is widely used in nanoelectronics. A method is developed for ellipsometric determination of the presence or absence of the "film-substrate" interfacial layer. Contributions of various factors into the total measurement uncertainty are analyzed, including the factors related to the ellipsometer characteristics. © 2010 Copyright SPIE - The International Society for Optical Engineering.


Gavrilenko V.P.,Moscow Institute of Physics and Technology | Novikov Yu.A.,RAS A.M. Prokhorov General Physics Institute | Rakov A.V.,Center for Surface and Vacuum Research | Todua P.A.,Moscow Institute of Physics and Technology
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2010

Test objects for calibration of scanning electron microscopes (SEMs) and atomic force microscopes (AFMs) operating in the nanometer range are analyzed. All the test objects can be divided into three groups: (a) structures with right-angled profiles; (b,c) structures with trapezoidal profiles and small/large angles of sidewalls inclination. Calibration methods for SEMs and AFMs, based on such structures, are presented. Structures with trapezoidal profiles and large angles of sidewall inclination offer the most broad range of calibration opportunities for SEMs and AFMs. © 2010 Copyright SPIE - The International Society for Optical Engineering.


Alzoba V.V.,Moscow Institute of Physics and Technology | Danilova M.A.,Center for Surface and Vacuum Research | Kuzin A.Yu.,Center for Surface and Vacuum Research | Mityukhlyaev V.B.,Center for Surface and Vacuum Research | And 3 more authors.
Russian Microelectronics | Year: 2012

The nonlinearity of scanning on a scanning electron microscope (SEM) of nanorelief elements with known geometric profile shapes is estimated. The average pitch value of the relief test structure is measured, when the studied sample is shifted along the X-axis (scanning axis). As an index that characterizes the nonlinearity of the SEM scanning with the stated sample displacements, the relative mean-square deviation from the average pitch value of the test structure is selected. It is experimentally shown that, when the magnification is 20k, this value is 0.4%, which is in the tolerance error range. © Pleiades Publishing, Ltd., 2012.

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