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Dyukov V.G.,Laboratory for Microparticle Analysis | Mityukhlyaev V.B.,Center for Surface and Vacuum Research | Stebelkov V.A.,Laboratory for Microparticle Analysis | Khoroshilov V.V.,Laboratory for Microparticle Analysis
Journal of Surface Investigation | Year: 2015

The results of elemental analysis of the dioxide uranium bulk samples and microparticles of different sizes are collated. Analyses are performed with a scanning electron microscope equipped with an X-ray energy dispersive microanalyzer (INCA X-act, Oxford Instruments, United Kingdom). The concentrations were calculated using a preinstalled program for bulk samples based on the XPP Matrix Correction algorithm. Concentrations of uranium in bulk samples and in microparticles, which were measured at accelerating voltages 6–8 kV, are practically the same down to particle size of 0.5 µm if the analyzed surfaces have no evident roughness. It is shown that accuracy indicators can be significantly improved for the analysis of particles characterized by irregular shape and surface roughness, if their surfaces are smoothed previously by a focused ion beam. The uncertainty in determination the uranium concentration in dioxide uranium particles is reduced from 10% to 2% after smoothing of their surface by the ion beam. © 2015, Pleiades Publishing, Ltd. Source


Gavrilenko V.P.,Moscow Institute of Physics and Technology | Novikov Yu.A.,RAS A.M. Prokhorov General Physics Institute | Rakov A.V.,Center for Surface and Vacuum Research | Todua P.A.,Moscow Institute of Physics and Technology
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2010

We consider features and restrictions of ellipsometry as applied to the system consisting of a silicon dioxide film on silicon, which is widely used in nanoelectronics. A method is developed for ellipsometric determination of the presence or absence of the "film-substrate" interfacial layer. Contributions of various factors into the total measurement uncertainty are analyzed, including the factors related to the ellipsometer characteristics. © 2010 Copyright SPIE - The International Society for Optical Engineering. Source


Gavrilenko V.P.,Moscow Institute of Physics and Technology | Novikov Yu.A.,RAS A.M. Prokhorov General Physics Institute | Rakov A.V.,Center for Surface and Vacuum Research | Todua P.A.,Moscow Institute of Physics and Technology
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2010

Test objects for calibration of scanning electron microscopes (SEMs) and atomic force microscopes (AFMs) operating in the nanometer range are analyzed. All the test objects can be divided into three groups: (a) structures with right-angled profiles; (b,c) structures with trapezoidal profiles and small/large angles of sidewalls inclination. Calibration methods for SEMs and AFMs, based on such structures, are presented. Structures with trapezoidal profiles and large angles of sidewall inclination offer the most broad range of calibration opportunities for SEMs and AFMs. © 2010 Copyright SPIE - The International Society for Optical Engineering. Source


Filippov M.N.,RAS Institute of Chemistry | Novikov Yu.A.,RAS A.M. Prokhorov General Physics Institute | Rakov A.V.,Center for Surface and Vacuum Research | Todua P.A.,Center for Surface and Vacuum Research
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2010

The new method of measurement of linear sizes of nanorelief elements is presented. The applicability of this method to linear measurements of nanorelief elements with trapezoid profile and wide and small inclination angles of side walls is demonstrated. The results of developed method and direct measurements are compared. Examples of measurements of linear sizes of relief pitch structures are given. © 2010 Copyright SPIE - The International Society for Optical Engineering. Source


Alzoba V.V.,Moscow Institute of Physics and Technology | Danilova M.A.,Center for Surface and Vacuum Research | Kuzin A.Yu.,Center for Surface and Vacuum Research | Mityukhlyaev V.B.,Center for Surface and Vacuum Research | And 3 more authors.
Russian Microelectronics | Year: 2012

The nonlinearity of scanning on a scanning electron microscope (SEM) of nanorelief elements with known geometric profile shapes is estimated. The average pitch value of the relief test structure is measured, when the studied sample is shifted along the X-axis (scanning axis). As an index that characterizes the nonlinearity of the SEM scanning with the stated sample displacements, the relative mean-square deviation from the average pitch value of the test structure is selected. It is experimentally shown that, when the magnification is 20k, this value is 0.4%, which is in the tolerance error range. © Pleiades Publishing, Ltd., 2012. Source

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