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De Koninck Y.,Ghent University | De Koninck Y.,Center for Nano and Biophotonics Photonics | Roelkens G.,Ghent University | Roelkens G.,Center for Nano and Biophotonics Photonics | And 2 more authors.
Laser and Photonics Reviews | Year: 2015

This article presents a novel III-V on silicon laser. This work exploits the phenomenon that a passive silicon cavity, side-coupled to a III-V waveguide, will provide high and narrow-band reflectivity into the III-V waveguide: the resonant mirror. This results in an electrically pumped laser with a threshold current of 4 mA and a side-mode suppression ratio up to 48 dB. This article presents a novel III-V on silicon laser. This work exploits the phenomenon that a passive silicon cavity, side-coupled to a III-V waveguide, will provide high and narrow-band reflectivity into the III-V waveguide: the resonant mirror. This results in an electrically pumped laser with a threshold current of 4 mA and a side-mode suppression ratio up to 48 dB. © 2015 by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Source


Keyvaninia S.,Ghent University | Keyvaninia S.,Center for Nano and Biophotonics Photonics | Verstuyft S.,Ghent University | Verstuyft S.,Center for Nano and Biophotonics Photonics | And 14 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2013

In this paper we show that using a DVS-BCB adhesive bonding process compact heterogeneously integrated III-V/silicon single mode lasers can be realized. Two new designs were implemented: in a first design a multimode interferometer coupler (MMI) - ring resonator combination is used to provide a comb-like reflection spectrum, while in a second design a triplet-ring reflector design is used to obtain the same. A broadband silicon Bragg grating reflector is implemented on the other side of the cavity. The III-V optical amplifier is heterogeneously integrated on the 400nm thick silicon waveguide layer, which is compatible with high-performance modulator designs and allows for efficient coupling to a standard 220nm high index contrast silicon waveguide layer. In order to make the optical coupling efficient, both the III-V waveguide and the silicon waveguide are tapered, with a tip width of the III-V waveguide of around 500nm. The III-V thin film optical amplifier is implemented as a 3μm wide mesa etched through to the n-type InP contact layer. In this particular device implementation the amplifier section was 500μm long. mW-level waveguide coupled output power at 20°C and a side mode suppression ratio of more than 40dB is obtained. © 2013 SPIE. Source


Keyvaninia S.,Ghent University | Keyvaninia S.,Center for Nano and Biophotonics Photonics | Verstuyft S.,Ghent University | Verstuyft S.,Center for Nano and Biophotonics Photonics | And 13 more authors.
Asia Communications and Photonics Conference, ACP | Year: 2012

A 4-channel multi-wavelength laser integrated on a silicon waveguide circuit is realized. Waveguide-coupled output powers of 2mW and a side mode suppression ratio of more than 45dB for all channels is realized. © OSA 2012. Source


Beunis F.,Ghent University | Beunis F.,Center for Nano and Biophotonics Photonics | Strubbe F.,Ghent University | Strubbe F.,Center for Nano and Biophotonics Photonics | And 9 more authors.
Colloids and Surfaces A: Physicochemical and Engineering Aspects | Year: 2014

The origin of charges in nonpolar liquids with surfactant is not completely understood. This study does not only look at bulk mechanisms as the origin of charged inverse micelles, but includes processes at the liquid/electrode interfaces. We apply a voltage over a layer of nonpolar liquid with surfactant and measure the current. Information about the generation of new charges is obtained from the remaining current after the initially present charges have reached equilibrium. We find that, for low voltages, the residual current is proportional with the electric field near the electrodes. This can not be explained by bulk generation alone. We interpret these results by assuming that inverse micelles exchange charge with an adsorbed layer of surfactant molecules at the electrodes. The findings of this study are relevant for technologies such as microfluidics and electrophoretic ink, where injection of charge from the electrodes contributes to power consumption and hydrodynamic instabilities. © 2013 Elsevier B.V. Source


Keyvaninia S.,Ghent University | Keyvaninia S.,Center for Nano and Biophotonics Photonics | Verstuyft S.,Ghent University | Verstuyft S.,Center for Nano and Biophotonics Photonics | And 18 more authors.
Optics Letters | Year: 2013

Heterogeneously integrated III-V-on-silicon second-order distributed feedback lasers utilizing an ultra-thin DVSBCB die-to-wafer bonding process are reported. A novel DFB laser design exploiting high confinement in the active waveguide is demonstrated. A 14 mW single-facet output power coupled to a silicon waveguide, 50 dB side-mode suppression ratio and continuous wave operation up to 60°C around 1550 nm is obtained. © 2013 Optical Society of America. Source

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