Time filter

Source Type

Hong S.,SKKU Advanced Institute of Nanotechnology SAINT | Hong S.,Samsung | Kim W.,Samsung | Kim W.,Center for Integrated Nanostructure Physics | And 10 more authors.
Journal of Physical Chemistry C | Year: 2013

Thermoelectric power waves, where multiwalled carbon nanotubes coated with cyclotrimethylene trinitramine (MWCNT/TNA) directly convert chemical energy to electricity, have received considerable attention recently. However, the low Seebeck coefficient of carbon nanotubes has been regarded as a hurdle to increasing the electrical potential. Here, we present Sb2Te 3-coated MWCNT arrays prepared by a sputtering method. An analytical model predicts an increase in Seebeck coefficient of the annular multishell structure by ∼75%. The heterostructure coupled with exothermic chemical reaction of TNA demonstrates an increase in peak electrical potential of 175% (∼198 mV), compared with typical outputs of bare MWCNT/TNA (∼72 mV). A serial connection of two repeating units increased the peak potential by up to 406 mV. © 2013 American Chemical Society.


News Article | September 2, 2016
Site: phys.org

Comparison between the synapse and the two-terminal tunnelling random access memory (TRAM). In the junctions (synapses) between neurons, signals are transmitted from one neuron to the next. TRAM is made by a stack of different layers: A semiconductor molybdenum disulfide (MoS2) layer with two electrodes (drain and source), an insulating hexagonal boron nitride (h-BN) layer and graphene layer. This two-terminal architecture simulates the two neurons that made up to the synaptic structure. When the difference in the voltage of the drain and the source is sufficiently high, electrons from the drain electrode tunnel through the insulating h-BN and reach the graphene layer. Memory is written when electrons are stored in the graphene layer, and it is erased by the introduction of positive charges in the graphene layer. Credit: Institute for Basic Science Last March, the artificial intelligence (AI) program AlphaGo beat Korean Go champion LEE Se-Dol at the Asian board game. "The game was quite tight, but AlphaGo used 1200 CPUs and 56,000 watts per hour, while Lee used only 20 watts. If a hardware that mimics the human brain structure is developed, we can operate artificial intelligence with less power," points out Professor YU Woo Jong. In collaboration with Sungkyunkwan University, researchers from the Center for Integrated Nanostructure Physics within the Institute for Basic Science (IBS), have devised a new memory device inspired by the neuron connections of the human brain. The research, published in Nature Communications, highlights the devise's highly reliable performance, long retention time and endurance. Moreover, its stretchability and flexibility makes it a promising tool for the next-generation soft electronics attached to clothes or body. The brain is able to learn and memorize thanks to a huge number of connections between neurons. The information you memorize is transmitted through synapses from one neuron to the next as an electro-chemical signal. Inspired by these connections, IBS scientists constructed a memory called two-terminal tunnelling random access memory (TRAM), where two electrodes, referred to as drain and source, resemble the two communicating neurons of the synapse. While mainstream mobile electronics, like digital cameras and mobile phones use the so-called three-terminal flash memory, the advantage of two-terminal memories like TRAM is that two-terminal memories do not need a thick and rigid oxide layer. "Flash memory is still more reliable and has better performance, but TRAM is more flexible and can be scalable," explains Professor Yu. TRAM is made up of a stack of one-atom-thick or a few atom-thick 2D crystal layers: One layer of the semiconductor molybdenum disulfide (MoS2) with two electrodes (drain and source), an insulating layer of hexagonal boron nitride (h-BN) and a graphene layer. In simple terms, memory is created (logical-0), read and erased (logical-1) by the flowing of charges through these layers. TRAM stores data by keeping electrons on its graphene layer. By applying different voltages between the electrodes, electrons flow from the drain to the graphene layer tunnelling through the insulating h-BN layer. The graphene layer becomes negatively charged and memory is written and stored and vice versa, when positive charges are introduced in the graphene layer, memory is erased. IBS scientists carefully selected the thickness of the insulating h-BN layer as they found that a thickness of 7.5 nanometers allows the electrons to tunnel from the drain electrode to the graphene layer without leakages and without losing flexibility. Flexibility and stretchability are indeed two key features of TRAM. When TRAM was fabricated on flexible plastic (PET) and stretachable silicone materials (PDMS), it could be strained up to 0.5% and 20%, respectively. In the future, TRAM can be useful to save data from flexible or wearable smartphones, eye cameras, smart surgical gloves, and body-attachable biomedical devices. Last but not least, TRAM has better performance than other types of two-terminal memories known as phase-change random-access memory (PRAM) and resistive random-access memory (RRAM).


Home > Press > Memory for future wearable electronics: Stretchable, flexible, reliable memory device inspired by the brain Abstract: Last March, the artificial intelligence (AI) program AlphaGo beat Korean Go champion LEE Se-Dol at the Asian board game. "The game was quite tight, but AlphaGo used 1200 CPUs and 56,000 watts per hour, while Lee used only 20 watts. If a hardware that mimics the human brain structure is developed, we can operate artificial intelligence with less power," points out Professor YU Woo Jong. In collaboration with Sungkyunkwan University, researchers from the Center for Integrated Nanostructure Physics within the Institute for Basic Science (IBS), have devised a new memory device inspired by the neuron connections of the human brain. The research, published in Nature Communications, highlights the devise's highly reliable performance, long retention time and endurance. Moreover, its stretchability and flexibility makes it a promising tool for the next-generation soft electronics attached to clothes or body. The brain is able to learn and memorize thanks to a huge number of connections between neurons. The information you memorize is transmitted through synapses from one neuron to the next as an electro-chemical signal. Inspired by these connections, IBS scientists constructed a memory called two-terminal tunnelling random access memory (TRAM), where two electrodes, referred to as drain and source, resemble the two communicating neurons of the synapse. While mainstream mobile electronics, like digital cameras and mobile phones use the so-called three-terminal flash memory, the advantage of two-terminal memories like TRAM is that two-terminal memories do not need a thick and rigid oxide layer. "Flash memory is still more reliable and has better performance, but TRAM is more flexible and can be scalable," explains Professor Yu. TRAM is made up of a stack of one-atom-thick or a few atom-thick 2D crystal layers: One layer of the semiconductor molybdenum disulfide (MoS2) with two electrodes (drain and source), an insulating layer of hexagonal boron nitride (h-BN) and a graphene layer. In simple terms, memory is created (logical-0), read and erased (logical-1) by the flowing of charges through these layers. TRAM stores data by keeping electrons on its graphene layer. By applying different voltages between the electrodes, electrons flow from the drain to the graphene layer tunnelling through the insulating h-BN layer. The graphene layer becomes negatively charged and memory is written and stored and vice versa, when positive charges are introduced in the graphene layer, memory is erased. IBS scientists carefully selected the thickness of the insulating h-BN layer as they found that a thickness of 7.5 nanometers allows the electrons to tunnel from the drain electrode to the graphene layer without leakages and without losing flexibility. Flexibility and stretchability are indeed two key features of TRAM. When TRAM was fabricated on flexible plastic (PET) and stretachable silicone materials (PDMS), it could be strained up to 0.5% and 20%, respectively. In the future, TRAM can be useful to save data from flexible or wearable smartphones, eye cameras, smart surgical gloves, and body-attachable biomedical devices. Last but not least, TRAM has better performance than other types of two-terminal memories known as phase-change random-access memory (PRAM) and resistive random-access memory (RRAM). For more information, please click If you have a comment, please us. Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.


Kim T.H.,Korea University | Han Y.D.,Korea University | Kim J.,Center for Integrated Nanostructure Physics | Kim J.,Sungkyunkwan University | And 3 more authors.
Synthetic Metals | Year: 2014

Organic field effect transistors (OFETs) were fabricated using a p-type rubrene single nanosheet (NS) as an active layer hybridized with n-type CdSe/ZnS quantum dots (QDs). The dark and photoresponsive (λex = 455 nm) electrical characteristics of the rubrene NS-based OFETs were investigated with and without the QDs. In dark conditions, the source-drain current (I DS) of the OFETs increased and the threshold voltage was shifted to a positive direction after the partial attachment of the QDs to the surface of the NS. We also observed that the laser confocal microscope (LCM) PL intensity of the rubrene NS decreased through the attachment of the QDs, due to the charge transfer effect. With light irradiation, the photoresponsive IDS and mobility of the OFETs were considerably enhanced by the hybridization with QDs. The results originated from both the ground charge transfer and exciton dissociation effects at the interface of p-type rubrene and n-type QDs heterojunctions. © 2014 Elsevier B.V.


Rummeli M.H.,Center for Integrated Nanostructure Physics | Bachmatiuk A.,Center for Integrated Nanostructure Physics | Lee Y.H.,Center for Integrated Nanostructure Physics | Eckert J.,Leibniz Institute for Solid State and Materials Research
Journal of Materials Research | Year: 2013

Electron microscopes are proving themselves indispensible tools in the world of nanotechnology. In this brief overview, we explore the potential of electrons within in situ transmission electron microscopy (TEM) with the electrons provided either from the imaging electron beam or from electrical currents across contacted specimens to nanoengineered graphene based on work at our labs. The use of electrons is demonstrated to be enormously versatile to pattern, heal, and even fabricate graphene. In essence, electrons provide a useful engineering tool box that with further development will enable device fabrication and modification inside a TEM, thus allowing one to study structure-property relationships of graphene as well as other low dimensional materials in near real time with atomic precision. Copyright © Materials Research Society 2013.

Loading Center for Integrated Nanostructure Physics collaborators
Loading Center for Integrated Nanostructure Physics collaborators