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Das S.,Bengal Engineering and Science University | Banerjee C.,Center for Advanced Photovoltaic Technologies Pvt. Ltd. | Kundu A.,Bengal Engineering and Science University | Dey P.,Bengal Engineering and Science University | And 2 more authors.
Journal of Physics D: Applied Physics | Year: 2013

Antireflective coating on front glass of superstrate-type single junction amorphous silicon solar cells (SCs) has been applied using highly monodispersed and stable silica nanoparticles (NPs). The silica NPs having 300 nm diameter were synthesized by Stober technique where the size of the NPs was controlled by varying the alcohol medium. The synthesized silica NPs were analysed by dynamic light scattering technique and Fourier transform infrared spectroscopy. The NPs were spin coated on glass side of fluorinated tin oxide (SnO2: F) coated glass superstrate and optimization of the concentration of the colloidal solution, spin speed and number of coated layers was done to achieve minimum reflection characteristics. An estimation of the distribution of the NPs for different optimization parameters has been done using field-emission scanning electron microscopy. Subsequently, the transparent conducting oxide coated glass with the layer having the minimum reflectance is used for fabrication of amorphous silicon SC. Electrical analysis of the fabricated cell indicates an improvement of 6.5% in short-circuit current density from a reference of 12.40 mA cm-2 while the open circuit voltage and the fill factor remains unaltered. A realistic optical model has also been proposed to gain an insight into the system. © 2013 IOP Publishing Ltd. Source


Banerjee C.,Center for Advanced Photovoltaic Technologies Pvt. Ltd. | Srikanth T.,Center for Advanced Photovoltaic Technologies Pvt. Ltd. | Basavaraju U.,Center for Advanced Photovoltaic Technologies Pvt. Ltd. | Tomy R.M.,Center for Advanced Photovoltaic Technologies Pvt. Ltd. | And 4 more authors.
Solar Energy | Year: 2013

Development of doped silicon oxide based microcrystalline material as a potential candidate for cost-effective and reliable back reflector layer (BRL) for single junction solar cells is discussed in this article. Phosphorus doped μc-SiOx:H layers with a refractive index ~2 and with suitable electrical properties were fabricated by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) technique, using the conventional capacitively coupled reactors. Optoelectronic properties of these layers were controlled by varying the oxygen content within the film. The performance of these layers as BRL have been investigated by incorporating them in a single junction amorphous silicon solar cell and compared with the conventional ZnO:Al based reflector layer. Single junction thin film a-Si solar cells with efficiency ~9.12% have been successfully demonstrated by using doped SiO:H based material as a back reflector. It is found that the oxide based back reflector shows analogous performance to that of conventional ZnO:Al BRL layer. The main advantage with this technology is that, it can avoid the ex-situ deposition of ZnO:Al, by using doped μc-SiO:H based material grown in the same reactor and with the same process gases as used for thin-film silicon solar cells. © 2013 Elsevier Ltd. Source


Das G.,Bengal Engineering and Science University | Mandal S.,Bengal Engineering and Science University | Tomy M.R.,Center for Advanced Photovoltaic Technologies Pvt. Ltd. | Banerjee C.,Center for Advanced Photovoltaic Technologies Pvt. Ltd. | And 2 more authors.
Materials Science in Semiconductor Processing | Year: 2014

Single junction a-Si:H solar cell using oxide based window and buffer layer was fabricated by using a conventional plasma enhanced chemical vapor deposition (PECVD) technique. The impact of oxide based window layers and the effect of oxide buffer layer thickness on light induced degradation are investigated. Solar cells with optimized oxide based window and buffer layers have been fabricated with an optical gap of 1.97 eV and 1.86 eV. On comparing these solar cells with carbide based window and buffer layers, it is found that light induced degradation (LID) of oxide based cells is almost 4% less than the carbide based ones. Oxide based cells show significant improvement in quantum efficiency for lower wavelength region, compared to carbide based cells. Stabilized efficiency after 1000 h light soaking for the oxide and carbide based solar cells is found to be 7.55% and 6.50%, respectively. © 2014 Elsevier Ltd. Source

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