Gokulakrishnan V.,Bharathidasan University |
Parthiban S.,Bharathidasan University |
Elangovan E.,CENIMAT I3N and CEMOP UNINOVA |
Ramamurthi K.,Bharathidasan University |
And 5 more authors.
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | Year: 2011
Indium oxide thin films deposited by spray pyrolysis were irradiated by 100 MeV O7+ ions with different fluences of 5 × 1011, 1 × 1012 and 1 × 1013 ions/cm2. X-ray diffraction analysis confirmed the structure of indium oxide with cubic bixbyite. The strongest (2 2 2) orientation observed from the as-deposited films was shifted to (4 0 0) after irradiation. Furthermore, the intensity of the (4 0 0) orientation was decreased with increasing fluence together with an increase in (2 2 2) intensity. Films irradiated with maximum fluence exhibited an amorphous component. The mobility of the as-deposited indium oxide films was decreased from ∼78.9 to 43.0 cm2/V s, following irradiation. Films irradiated with a fluence of 5 × 1011 ions/cm2 showed a better combination of electrical properties, with a resistivity of 4.57 × 10-3 Ω cm, carrier concentration of 2.2 × 1019 cm-3 and mobility of 61.0 cm2/V s. The average transmittance obtained from the as-deposited films decreased from ∼81% to 72%, when irradiated with a fluence of 5 × 1011 ions/cm2. The surface microstructures confirmed that the irregularly shaped grains seen on the surface of the as-deposited films is modified as "radish-like" morphology when irradiated with a fluence of 5 × 1011 ions/cm2. © 2011 Elsevier B.V. All rights reserved.