Mesic B.,Jülich Research Center |
Mesic B.,CemeCon AG |
Schroeder H.,Jülich Research Center
Thin Solid Films | Year: 2012
TaSiN is a promising material for application as electrically conductive diffusion barrier for the integration of high permittivity perovskite materials in integrated circuits. TaSiN thin films were deposited by reactive radio frequency magnetron sputtering using TaSi and TaSi 2.7 targets in an Ar/N 2 atmosphere. The sputter power was varied in order to achieve different TaSiN compositions. The stoichiometry of as-deposited films was estimated using Rutherford backscattering spectroscopy. The as-deposited TaSiN thin films are amorphous. Their crystallization temperature is above 700 °C and increases with higher nitrogen content. They have metallic conduction and ohmic behavior. The resistivity of as deposited films is in the range from 10 - 6 Ω m up to 10 - 3 Ω m and increases with nitrogen content. It was found that p ++-Si/Ta 21Si 57N 21 develops unacceptable high contact resistance. Introducing an intermediate Pt layer the stack p ++-Si/Pt/Ta 21Si 57N 21 had a good conductive properties and good thermal stability at 700 °C. © 2012 Elsevier B.V. All rights reserved.
Keunecke M.,Fraunhofer Institute for Surface Engineering and Thin Films |
Stein C.,Fraunhofer Institute for Surface Engineering and Thin Films |
Bewilogua K.,Fraunhofer Institute for Surface Engineering and Thin Films |
Koelker W.,CemeCon AG |
And 2 more authors.
Surface and Coatings Technology | Year: 2010
Coatings like TiN or TiAlN are well established as hard and wear resistant tool coatings. These coatings often are prepared by PVD techniques like arc evaporation or d.c. magnetron sputtering. Typical micro hardness values of such hard coatings are in the range of 30. GPa. Compared to d.c. magnetron sputtering processes the pulsed magnetron sputter deposition technique could be shown as a clear advancement. Furthermore pure TiAlN hard coatings as well as TiAlN coatings modified by addition of elements like Si and Cr were prepared in order to improve the coating properties using the pulsed magnetron sputter technique in a batch coater equipped with 4 targets. Coatings prepared with the pulsed sputter process showed both high hardness and high wear resistance. The application potential of pulsed sputtered TiAlN coatings is demonstrated by turning test results of coated cemented carbide cutting inserts.Beside hardness and wear, other properties like adhesion or high temperature stability were determined. Cross sectional SEM images revealed the growth structure in dependence of the applied substrate bias and of the added elements. The chemical composition of the coatings was investigated by electron microprobe analysis and the phase and crystal size were determined by X-ray diffraction. Using the pulsed magnetron sputter process the coating properties, especially the hardness and the morphology, could be significantly improved. With indentation hardness values in the range of 40. GPa the region of super hard materials could be reached. © 2010 Elsevier B.V.
Rovere F.,University of Leoben |
Rovere F.,RWTH Aachen |
Music D.,RWTH Aachen |
Ershov S.,RWTH Aachen |
And 4 more authors.
Journal of Physics D: Applied Physics | Year: 2010
The phase stability of Al-containing cubic transition metal (TM) nitrides, where Al substitutes for TM (i.e. TM1-xAlxN), is studied as a function of the TM valence electron concentration (VEC). X-ray diffraction and thermal analyses data of magnetron sputtered Ti1-xAl xN, V1-xAlxN and Cr1-xAl xN films indicate increasing phase stability of cubic TM 1-xAlxN at larger Al contents and higher temperatures with increasing TM VEC. These experimental findings can be understood based on first principle investigations of ternary cubic TM1-xAlxN with TM = Sc, Ti, V, Cr, Y, Zr and Nb where the TM VEC and the lattice strain are systematically varied. However, our experimental data indicate that, in addition to the decomposition energetics (cubic TM1-xAlxN → cubic TMN + hexagonal AlN), future stability models have to include nitrogen release as one of the mechanisms that critically determine the overall phase stability of TM1-xAlxN. © 2010 IOP Publishing Ltd.
CemeCon AG | Date: 2011-05-02
The invention relates to a body with a substrate (1), an intermediate layer (2) applied on top thereof and a CVD diamond layer (3) applied to the intermediate layer. In order to propose a body coated with CVD diamond and a production process, in which the body has an increased load-bearing capacity under various mechanical loads, provision is made for the intermediate layer to be predominantly metallic, wherein the metal fraction of the intermediate layer consists predominantly of tungsten and/or chromium, and for the intermediate layer to have a roughness defined by an Rz value of 0.5 m-3.0 m.
CemeCon AG | Date: 2012-09-10
Work piece processing is performed by pulsed discharges between an anode (2) and a magnetron sputtering cathode (1) in solid-gas plasmas using a chamber (2) containing the work piece (7). A system (12) maintains a vacuum in the chamber and another system (14) provides sputtering and reactive gases. The pulses are produced in a plasma pulser circuit including the anode and the cathode, the discharges creating gas and partially ionized solid plasma blobs (3) moving or spreading from a region at a surface of the cathode towards the work piece and the anode. A pulsed current comprising biasing pulses arises between the second electrodes. Biasing discharges are produced between the anode and the work piece when said plasma blobs have spread to regions at the anode and at the work piece so that the pulsed current is the current of these biasing discharges.
CemeCon AG | Date: 2015-10-26
A device and method for generating an electrical discharge are described. A first electrode (30) is operated to be a cathode relative to a second electrode (16). A gas is introduced into the chamber (14) by the first electrode (30). The first electrode (30) has a closed antechamber (32) with a metal wall (34). A tube (36) consisting of a different material than the wall (34) is provided through which the gas from the antechamber (32) is conducted into the chamber (14). A front portion of the tube (36) is embedded in the wall (34) of the antechamber (32). In its rear portion, the tube (36) has a free end projecting into the antechamber (32). A stable electrical discharge can be generated thereby in a particularly easy manner.
CemeCon AG | Date: 2014-10-01
A process and a device for coating a substrate 22 are described. In a vacuum chamber 10, a first magnetron cathode 24 is provided with a sputtering target 28 of a first material composition as predominant metal element a processing metal element chosen from Hf, Ta, Zr, W, Nb, Mo. A second magnetron cathode 26 is provided with a sputtering target 30 of a second material composition comprising predominantly carbon or one or more metals with a lower atomic mass than the processing metal element. In order to obtain coatings with improved properties, electrical power is supplied to the cathodes 24, 26 such that the targets 28, 30 are sputtered, where electrical power is supplied to the first cathode 24 as pulsed electrical power according to high power impulse magnetron sputtering with a first peak current density, and to the second cathode 26 as DC electrical power with a constant second current density or as time-variable electrical power with a second peak current density lower than the first peak current density. The substrate 22 is arranged within the vacuum chamber such that particles from the plasma deposit onto the substrate forming a coating. During the deposition process, a bias voltage V_(B) is applied to the substrate comprising bias pulses which are synchronized with pulses applied to the first cathode, and are applied for a shorter duration T_(B) than the pulses at the first cathode. Thus, a coated body may be formed with a substrate 22 and a coating layer 52 which comprises oxides, nitrides, or oxynitrides of carbon or metals selected from the groups IVA - VIA of the periodic table and at least one processing metal element selected out of Hf, Ta, W, Zr, Nb and Mo, present in an atomic concentration of 1 - 18 at.-%. The coating layer 52 comprises a process gas concentration of 0.3 at.-% or less.
CemeCon AG | Date: 2014-02-25
In a simple method and device for producing plasma flows of a metal and/or a gas electric discharges are periodically produced between the anode and a metal magnetron sputtering cathode in crossed electric and magnetic fields in a chamber having a low pressure of a gas. The discharges are produced so that each discharge comprises a first period with a low electrical current passing between the anode and cathode for producing a metal vapor by magnetron sputtering, and a second period with a high electrical current passing between the anode and cathode for producing an ionization of gas and the produced metal vapor. Instead of the first period a constant current discharge can be used. Intensive gas or metal plasma flows can be produced without forming contracted arc discharges. The selfsputtering phenomenon can be used.
CemeCon AG | Date: 2012-03-28
In a simple method and device for producing plasma flows of a metal and/or a gas electric discharges are periodically produced between the anode and a metal magnetron sputtering cathode in crossed electric and magnetic fields in a chamber having a low pressure of a gas. The discharges are produced so that a permanent direct-current discharge is applied with a low electrical current passing between the anode and cathode for producing a metal vapor by magnetron sputtering, and periodic discharges are produced with a high electrical current passing between the anode and cathode for producing an ionization of gas and the produced metal vapor. During the discharges, the driving current is _(2)S, where S is the active surface of the cathode in cm^(2) and _(2) has a value of 1-10 A/cm^(2). Intensive gas or metal plasma flows can be produced without forming contracted arc discharges. The selfsputtering phenomenon can be used.
CemeCon AG | Date: 2012-09-25
A process and a device for coating a substrate (22) are described. In a vacuum chamber (10), a first magnetron cathode (24) is provided with a sputtering target (28) of a first metal composition comprising predominantly aluminium. A second magnetron cathode (26) is provided with a sputtering target (30) of a second metal composition comprising at least 50 at-% of a second metal selected from groups IVA-VIA of the periodic table. In order to obtain coatings with improved properties, electrical power is supplied to the cathodes (24, 26) such that the targets (28, 30) are sputtered, where electrical power is supplied to the first cathode (24) as pulsed electrical power according to high power impulse magnetron sputtering with a first peak current density, and to the second cathode (26) with a second peak current density lower than the first peak current density. The substrate (22) is arranged within the vacuum chamber such that particles from the plasma deposit onto the substrate forming a coating.