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Patent
CAS Shanghai Institute of Microsystem and Information Technology | Date: 2014-04-08

A nano-scale superconducting quantum interference device and a manufacturing method thereof, comprising the following steps of: S1: providing a substrate and growing a first superconducting material layer thereon; S2: forming a photo-resist layer and performing patterning; S3: etching the first superconducting material layer in a predetermined region; S4: covering a layer of insulation material on a top and a side of a structure obtained in step S3; S5: growing a second superconducting material layer; S6: removing the structure above the plane where the upper surface of the first superconducting material layer locates, to obtain a plane superconducting structure, in the middle of which at least one insulating interlayer is inserted; S7: forming at least one nanowire vertical to the insulating interlayer, to obtain the nano-scale superconducting quantum interference device. The width of the superconducting ring and the length of the nano junction are determined by the insulating interlayer.


Patent
CAS Shanghai Institute of Microsystem and Information Technology | Date: 2014-05-20

The invention provides a sulfur doping method for graphene, which comprises the steps of: 1) providing graphene and placing the grapheme in a chemical vapor deposition reaction chamber; 2) employing an inert gas to perform ventilation and exhaust treatment in the reaction chamber; 3) introducing a sulfur source gas to perform sulfur doping on the graphene at 500-1050 C.; and 4) cooling the reaction chamber in a hydrogen and inert gas atmosphere. The present invention can perform sulfur doping on the graphene simply and efficiently, the economic cost is low, and large-scale production can be realized. Large area sulfur doping on graphene can be realized, and doping of graphene on an insulating substrate or metal substrate can be carried out directly.


Patent
CAS Shanghai Institute of Microsystem and Information Technology | Date: 2017-01-25

Provided are a method and device for reducing the extrinsic dark count of a superconducting nanowire single photon detector (SNSPD), comprising the steps of: integrating a multi-layer film filter on the superconducting nanowire single photon detector; wherein, the multi-layer film filter is a device implemented by a multi-layer dielectric film and having a band-pass filtering function. The extrinsic dark count is the dark count triggered by optical fiber blackbody radiance and external stray light. The superconducting nanowire single photon detector comprises: a substrate having an upper surface integrated with an upper anti-reflection layer and a lower surface integrated with a lower anti-reflection layer; an optical cavity structure; a superconducting nanowire; and a reflector. The present invention is easy to operate, and only needs to integrate the multi-layer film filter on the substrate of the SNSPD to filter non-signal radiation. The method effectively reduces the extrinsic dark count while ensuring the signal radiation and the optical coupling efficiency of a device, thereby improving the detection efficiency of the device in dark count specific conditions.


Patent
CAS Shanghai Institute of Microsystem and Information Technology | Date: 2015-06-04

The present disclosure provides a local carbon-supply device and a method for preparing a wafer-level graphene single crystal by local carbon supply. The method includes: providing the local carbon-supply device; preparing a nickel-copper alloy substrate, placing the nickel-copper alloy substrate in the local carbon-supply device; placing the local carbon-supply device provided with the nickel-copper alloy substrate in a chamber of a chemical vapor-phase deposition system, and introducing a gaseous carbon source into the local carbon-supply device to grow the graphene single crystal on the nickel-copper alloy substrate. A graphene prepared by embodiments of the present disclosure has the advantages of good crystallinity of a crystal domain, simple preparation condition, low cost, a wider window of condition parameters required for growth, and good repeatability, which lays a foundation for wide application of the wafer-level graphene single crystal in a graphene apparatus and other fields.


Patent
CAS Shanghai Institute of Microsystem and Information Technology | Date: 2014-12-18

An ultrahigh resolution magnetic resonance imaging method and apparatus, the method comprises the following steps of: placing a test sample within an action range of a magnetic gradient source and a nano-scale superconducting quantum interference device, applying a static magnetic field on the test sample by a static magnetic source, and applying a nuclear magnetic resonance radio-frequency pulse on the test sample by a radio-frequency source to excite the test sample to cause nuclear magnetic resonance; directly coupling the nano-scale superconducting quantum interference device with the test sample to detect nuclear magnetic resonance spectrum signals generated by the test sample; establishing an image of the test sample according to the detected nuclear magnetic resonance spectrum signals and space distribution information of gradient magnetic fields generated by the magnetic gradient source.


Patent
CAS Shanghai Institute of Microsystem and Information Technology | Date: 2014-05-12

A method and a device for reducing the extrinsic dark count of a superconducting nanowire single photon detector (SNSPD), it comprises the steps of: integrating a multi-layer film filter on the superconducting nanowire single photon detector; the multi-layer film filter is a device implemented by a multi-layer dielectric film and having a band-pass filtering function. The extrinsic dark count is the dark count triggered by optical fiber blackbody radiance and external stray light. The superconducting nanowire single photon detector comprises: a substrate having an upper surface integrated with an upper anti-reflection layer and a lower surface integrated with a lower anti-reflection layer; an optical cavity structure; a superconducting nanowire; and a reflector. The present invention is easy to operate, and only needs to integrate the multi-layer film filter on the substrate of the SNSPD to filter non-signal radiation.


Patent
CAS Shanghai Institute of Microsystem and Information Technology | Date: 2017-05-24

A superconducting quantum interference device (SQID) using a single operational amplifier magnetic sensor; the magnetic sensor, in place of a pre-amplifier and an integrator in a conventional flux-locked loop (FLL), employs a low noise operational amplifier to amplify SQID voltage signals in open-loop mode, and the open-loop output of the single operational amplifier directly drives a feedback resistor and a feedback coil. The SQUID FLL employing a single operational amplifier has positive and negative terminal input wiring modes, each mode having three optional forms. The sensor employs only one operational amplifier to realize an SQUID FLL, thus having a simple circuit, avoiding the use of an integrator of a conventional circuit, reducing delay of a loop, and assuring the FLL with higher bandwidth, so the sensor is significant for SQID multi-channel application.


Wu T.,CAS Shanghai Institute of Microsystem and Information Technology
Nature Materials | Year: 2015

Wafer-scale single-crystalline graphene monolayers are highly sought after as an ideal platform for electronic and other applications. At present, state-of-the-art growth methods based on chemical vapour deposition allow the synthesis of one-centimetre-sized single-crystalline graphene domains in ∼12 h, by suppressing nucleation events on the growth substrate. Here we demonstrate an efficient strategy for achieving large-area single-crystalline graphene by letting a single nucleus evolve into a monolayer at a fast rate. By locally feeding carbon precursors to a desired position of a substrate composed of an optimized Cu–Ni alloy, we synthesized an ∼1.5-inch-large graphene monolayer in 2.5 h. Localized feeding induces the formation of a single nucleus on the entire substrate, and the optimized alloy activates an isothermal segregation mechanism that greatly expedites the growth rate. This approach may also prove effective for the synthesis of wafer-scale single-crystalline monolayers of other two-dimensional materials. © 2015 Nature Publishing Group


Patent
CAS Shanghai Institute of Microsystem and Information Technology | Date: 2015-07-20

A preparation method of a graphene nanoribbon on h-BN, comprising: 1) forming a h-BN groove template with a nano ribbon-shaped groove structure on the h-BN by adopting a metal catalysis etching method; 2) growing a graphene nanoribbon in the h-BN groove template by adopting a chemical vapor deposition method. In the present invention, a CVD method is adopted to directly prepare a morphology controllable graphene nanoribbon on the h-BN, which helps to solve the long-term critical problem that the graphene is difficult to nucleate and grow on an insulating substrate, and to avoid the series of problems introduced by the complicated processes of the transferring of the graphene and the subsequent clipping manufacturing for a nanoribbon and the like.


Patent
CAS Shanghai Institute of Microsystem and Information Technology | Date: 2016-06-01

Provided is an image type electron spin polarimeter. It at least comprises a scattering target, a two-dimensional electron detector and an electron bending unit, wherein the electron bending unit is used for bending the orbit of the incident (scattered) electrons to a first (second) angle to arrive the scattering target (two-dimensional electron detector) with an optimal incident angle, and to transfer the image of the electron intensities from the entrance plane (scattering target) to the scattering target (two-dimensional electron detector) with small aberrations, and to separate the orbits of incident and scattered electrons to increase the degree of freedom of the geometric configuration of each component of the spin polarimeter. At least one of the first and second angles is not 0, thereby achieving the first transfer of the two-dimensional image of electron intensities on the entrance plane to the scattering target and the second transfer from scattering target to the two-dimensional electron detector respectively with small aberrations, and then achieving multichannel measurements of the electron spin.

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