CAS Shanghai Institute of Microsystem and Information Technology | Date: 2014-04-08
A nano-scale superconducting quantum interference device and a manufacturing method thereof, comprising the following steps of: S1: providing a substrate and growing a first superconducting material layer thereon; S2: forming a photo-resist layer and performing patterning; S3: etching the first superconducting material layer in a predetermined region; S4: covering a layer of insulation material on a top and a side of a structure obtained in step S3; S5: growing a second superconducting material layer; S6: removing the structure above the plane where the upper surface of the first superconducting material layer locates, to obtain a plane superconducting structure, in the middle of which at least one insulating interlayer is inserted; S7: forming at least one nanowire vertical to the insulating interlayer, to obtain the nano-scale superconducting quantum interference device. The width of the superconducting ring and the length of the nano junction are determined by the insulating interlayer.
CAS Shanghai Institute of Microsystem and Information Technology | Date: 2014-05-20
The invention provides a sulfur doping method for graphene, which comprises the steps of: 1) providing graphene and placing the grapheme in a chemical vapor deposition reaction chamber; 2) employing an inert gas to perform ventilation and exhaust treatment in the reaction chamber; 3) introducing a sulfur source gas to perform sulfur doping on the graphene at 500-1050 C.; and 4) cooling the reaction chamber in a hydrogen and inert gas atmosphere. The present invention can perform sulfur doping on the graphene simply and efficiently, the economic cost is low, and large-scale production can be realized. Large area sulfur doping on graphene can be realized, and doping of graphene on an insulating substrate or metal substrate can be carried out directly.
CAS Shanghai Institute of Microsystem and Information Technology | Date: 2017-01-25
Provided are a method and device for reducing the extrinsic dark count of a superconducting nanowire single photon detector (SNSPD), comprising the steps of: integrating a multi-layer film filter on the superconducting nanowire single photon detector; wherein, the multi-layer film filter is a device implemented by a multi-layer dielectric film and having a band-pass filtering function. The extrinsic dark count is the dark count triggered by optical fiber blackbody radiance and external stray light. The superconducting nanowire single photon detector comprises: a substrate having an upper surface integrated with an upper anti-reflection layer and a lower surface integrated with a lower anti-reflection layer; an optical cavity structure; a superconducting nanowire; and a reflector. The present invention is easy to operate, and only needs to integrate the multi-layer film filter on the substrate of the SNSPD to filter non-signal radiation. The method effectively reduces the extrinsic dark count while ensuring the signal radiation and the optical coupling efficiency of a device, thereby improving the detection efficiency of the device in dark count specific conditions.
Wu T.,CAS Shanghai Institute of Microsystem and Information Technology
Nature Materials | Year: 2015
Wafer-scale single-crystalline graphene monolayers are highly sought after as an ideal platform for electronic and other applications. At present, state-of-the-art growth methods based on chemical vapour deposition allow the synthesis of one-centimetre-sized single-crystalline graphene domains in ∼12 h, by suppressing nucleation events on the growth substrate. Here we demonstrate an efficient strategy for achieving large-area single-crystalline graphene by letting a single nucleus evolve into a monolayer at a fast rate. By locally feeding carbon precursors to a desired position of a substrate composed of an optimized Cu–Ni alloy, we synthesized an ∼1.5-inch-large graphene monolayer in 2.5 h. Localized feeding induces the formation of a single nucleus on the entire substrate, and the optimized alloy activates an isothermal segregation mechanism that greatly expedites the growth rate. This approach may also prove effective for the synthesis of wafer-scale single-crystalline monolayers of other two-dimensional materials. © 2015 Nature Publishing Group
CAS Shanghai Institute of Microsystem and Information Technology | Date: 2015-12-11
An SbTeTi phase-change thin-film material applicable to a phase-change memory and preparation thereof. The SbTeTi phase-change memory material is formed by doping an SbTe phase-change material with Ti, Ti forms bonds with both Sb and Te, and the SbTeTi phase-change memory material has a chemical formula Sb_(x)Te_(y)Ti_(100-x-y), where 0
CAS Shanghai Institute of Microsystem, Information Technology and Fudan University | Date: 2014-03-28
The present invention provides a photonic crystal supporting high frequency sensitivity self-collimation phenomenon and design method and use thereof. The photonic crystal supporting high frequency sensitivity self-collimation phenomenon has a periodic distribution of refractive index formed by at least two kinds of materials; there exists straight equi-frequency contours or flat equi-frequency surfaces in a certain band in a dispersion space of the photonic crystal, and the change rate of curvatures of the equi-frequency contours or the equi-frequency surfaces with frequencies around the frequency of straight equi-frequency contours or flat equi-frequency surfaces is at least increased at least 50 times than the change rate in vacuum. For the photonic crystal of the present invention is used for controlling diffracted intensity of light beam, detecting refractive index and the like.
CAS Shanghai Institute of Microsystem and Information Technology | Date: 2015-07-20
A preparation method of a graphene nanoribbon on h-BN, comprising: 1) forming a h-BN groove template with a nano ribbon-shaped groove structure on the h-BN by adopting a metal catalysis etching method; 2) growing a graphene nanoribbon in the h-BN groove template by adopting a chemical vapor deposition method. In the present invention, a CVD method is adopted to directly prepare a morphology controllable graphene nanoribbon on the h-BN, which helps to solve the long-term critical problem that the graphene is difficult to nucleate and grow on an insulating substrate, and to avoid the series of problems introduced by the complicated processes of the transferring of the graphene and the subsequent clipping manufacturing for a nanoribbon and the like.
CAS Shanghai Institute of Microsystem and Information Technology | Date: 2013-02-26
The present invention provides a variable area capacitive lateral acceleration sensor and a preparation method. The acceleration sensor at least includes: three-layer stack structure bonded by a first substrate, a second substrate and a third substrate which are electrically isolated with each other, wherein, the second substrate includes a movable seismic mass, a frame surrounded the movable seismic mass, a elastic beam connected to the movable seismic mass and the frame, a plurality of bar structure electrodes positioned on two surfaces of the movable seismic mass, an anti-overloading structure arranged on the movable seismic mass, etc.; the plurality of first bar structure electrodes on the first substrate and a plurality of second bar structure electrodes on one surface of the second substrate form capacitor structure, the plurality of third bar structure electrodes on the third substrate and a plurality of second bar structure electrodes on one surface of the second substrate form capacitor structure, and those two capacitor form differential sensitive capacitor structure. The present invention has the advantage of high sensitivity and good linearity, and different kinds of beam shapes may be designed as needed, to prepare capacitive acceleration sensors with different sensitivity, and the preparation has high flexibility.
CAS Shanghai Institute of Microsystem and Information Technology | Date: 2014-02-21
A manufacturing method of a graphene modulated high-k oxide and metal gate Ge-based MOS device, which comprises the following steps: 1) introducing a graphene thin film on a Ge-based substrate; 2) conducting fluorination treatment to the graphene thin film to form fluorinated graphene; 3) activating the surface of the fluorinated graphene by adopting ozone plasmas, and then forming a high-k gate dielectric on the surface of the fluorinated graphene through an atomic layer deposition technology; and 4) forming a metal electrode on the surface of the high-k gate dielectric. Since the present invention utilizes the graphene as a passivation layer to inhibit the formation of unstable oxide GeO_(x )on the surface of the Ge-based substrate and to stop mutual diffusion between the gate dielectric and the Ge-based substrate, the interface property between Ge and the high-k gate dielectric layer is improved. The fluorinated graphene can enable the graphene to become a high-quality insulator on the basis of keeping the excellent property of the graphene, so that the influence thereof on the electrical property of the Ge-based device is reduced. By adopting the ozone plasmas to treat the Ge-based graphene and then by adopting the atomic layer deposition technology, an ultrathin Hf-based high-k gate dielectric layer can be obtained.
CAS Shanghai Institute of Microsystem and Information Technology | Date: 2016-06-01
Provided is an image type electron spin polarimeter. It at least comprises a scattering target, a two-dimensional electron detector and an electron bending unit, wherein the electron bending unit is used for bending the orbit of the incident (scattered) electrons to a first (second) angle to arrive the scattering target (two-dimensional electron detector) with an optimal incident angle, and to transfer the image of the electron intensities from the entrance plane (scattering target) to the scattering target (two-dimensional electron detector) with small aberrations, and to separate the orbits of incident and scattered electrons to increase the degree of freedom of the geometric configuration of each component of the spin polarimeter. At least one of the first and second angles is not 0, thereby achieving the first transfer of the two-dimensional image of electron intensities on the entrance plane to the scattering target and the second transfer from scattering target to the two-dimensional electron detector respectively with small aberrations, and then achieving multichannel measurements of the electron spin.