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Niu T.,CAS Shanghai Institute of Microsystem and Information Technology
Applied Physics Letters | Year: 2015

In this letter, we demonstrate the control of dipole alignment of monolayer chloroaluminum phthalocyanine (ClAlPc) molecules via the strain in Au(111) substrates. Local ordering of ClAlPc dipole comprising alternate Cl-up and Cl-down configurations is found on the tensile-strained Au(111)/mica as a result of strain-enhanced absorption of Cl-down ClAlPc's and the dipole-dipole interaction. In contrast, the strain-released single crystal Au(111) substrate shows negligible coupling to Cl-down ClAlPc, therefore, facilitating the formation of unidirectionally aligned Cl-up ClAlPc dipole array. The dipole-dipole interaction becomes less prominent at low ClAlPc coverage where ClAlPc molecules can find their favorable absorption sites more easily according to their inherent dipole orientation. Our results emphasize the superior role of molecule-substrate interaction in functional molecular engineering on metal surface hence provide fundamental insight into the potential applications in molecular nanodevices with tunable and controllable properties. © 2015 AIP Publishing LLC.

Huang G.,Fudan University | Mei Y.,Fudan University | Mei Y.,CAS Shanghai Institute of Microsystem and Information Technology | Mei Y.,Innovative Micro Technology
Advanced Materials | Year: 2012

Conventional solid films on certain substrates play a crucial role in various applications, for example in flat panel displays, silicon technology, and protective coatings. Recently, tremendous attention has been directed toward the thinning and shaping of solids into so-called nanomembranes, offering a unique and fantastic platform for research in nanoscience and nanotechnology. In this Review, a conceptual description of nanomembranes is introduced and a series of examples demonstrate their great potential for future applications. The thinning of nanomembranes indeed offers another strategy to fabricate nanomaterials, which can be integrated onto a chip and exhibit valuable properties (e.g. giant persistent photoconductivity and thermoelectric property). Furthermore, the stretching of nanomembranes enables a macroscale route for tuning the physical properties of the membranes at the nanoscale. The process by which nanomembranes release from a substrate presents several approaches to shaping nanomembranes into three-dimensional architectures, such as rolled-up tubes, wrinkles, and the resulting channels, which can provide fascinating applications in electronics, mechanics, fluidics, and photonics. Nanomembranes as a new type of nanomaterial promise to be an attractive direction for nanoresearch. Thinning and shaping solid films into nanomembranes offers an alternative way to fabricate nanomaterials. The thinner thickness of nanomembranes makes them fantastic to deform, shape, and architect as planar or three-dimensional structures with unique geometries and new properties. Newly developed structures and properties of nanomembranes are summarized and reviewed in this article as well as their potential applications. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Wu T.,CAS Shanghai Institute of Microsystem and Information Technology
Nature Materials | Year: 2015

Wafer-scale single-crystalline graphene monolayers are highly sought after as an ideal platform for electronic and other applications. At present, state-of-the-art growth methods based on chemical vapour deposition allow the synthesis of one-centimetre-sized single-crystalline graphene domains in ∼12 h, by suppressing nucleation events on the growth substrate. Here we demonstrate an efficient strategy for achieving large-area single-crystalline graphene by letting a single nucleus evolve into a monolayer at a fast rate. By locally feeding carbon precursors to a desired position of a substrate composed of an optimized Cu–Ni alloy, we synthesized an ∼1.5-inch-large graphene monolayer in 2.5 h. Localized feeding induces the formation of a single nucleus on the entire substrate, and the optimized alloy activates an isothermal segregation mechanism that greatly expedites the growth rate. This approach may also prove effective for the synthesis of wafer-scale single-crystalline monolayers of other two-dimensional materials. © 2015 Nature Publishing Group

CAS Shanghai Institute of Microsystem and Information Technology | Date: 2014-02-21

A manufacturing method of a graphene modulated high-k oxide and metal gate Ge-based MOS device, which comprises the following steps: 1) introducing a graphene thin film on a Ge-based substrate; 2) conducting fluorination treatment to the graphene thin film to form fluorinated graphene; 3) activating the surface of the fluorinated graphene by adopting ozone plasmas, and then forming a high-k gate dielectric on the surface of the fluorinated graphene through an atomic layer deposition technology; and 4) forming a metal electrode on the surface of the high-k gate dielectric. Since the present invention utilizes the graphene as a passivation layer to inhibit the formation of unstable oxide GeO

CAS Shanghai Institute of Microsystem and Information Technology | Date: 2013-02-26

The present invention provides a variable area capacitive lateral acceleration sensor and a preparation method. The acceleration sensor at least includes: three-layer stack structure bonded by a first substrate, a second substrate and a third substrate which are electrically isolated with each other, wherein, the second substrate includes a movable seismic mass, a frame surrounded the movable seismic mass, a elastic beam connected to the movable seismic mass and the frame, a plurality of bar structure electrodes positioned on two surfaces of the movable seismic mass, an anti-overloading structure arranged on the movable seismic mass, etc.; the plurality of first bar structure electrodes on the first substrate and a plurality of second bar structure electrodes on one surface of the second substrate form capacitor structure, the plurality of third bar structure electrodes on the third substrate and a plurality of second bar structure electrodes on one surface of the second substrate form capacitor structure, and those two capacitor form differential sensitive capacitor structure. The present invention has the advantage of high sensitivity and good linearity, and different kinds of beam shapes may be designed as needed, to prepare capacitive acceleration sensors with different sensitivity, and the preparation has high flexibility.

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