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Natick, MA, United States

Agency: Department of Energy | Branch: | Program: SBIR | Phase: Phase II | Award Amount: 1.01M | Year: 2014

CdZnTe remains the material of choice for room temperature semiconductor detection of X- and -ray radiation, but the availability of high performance material is limited and the cost is high. In this project we will build upon our success in crystal growth and annealing processes that have resulted in growth of large diameter single crystal boules and high performance gamma radiation detectors. The goal of this program is to develop new processing techniques to achieve growth of very large single crystal CdZnTe crystals with a high yield of material suitable for production of spectroscopic gamma detectors. We expect these innovations to substantially reduce the cost of CZT detectors below the current levels. Commercial Applications and Other Benefits: Wide band gap semiconductors such as CdZnTe are exceptionally suitable for detection of nuclear radiation. They have applications as inspection tools in homeland security, Positron Emission Tomography (PET) and scinti- mammography in medicine, and nuclear energy monitoring devices.

Agency: Department of Defense | Branch: Missile Defense Agency | Program: SBIR | Phase: Phase II | Award Amount: 999.58K | Year: 2011

The work proposed here seeks to produce CZT substrates with superior qualities aimed at improving the performance of MCT detectors used in infrared detectors. The proposed work promises to overcome one of the major causes of dislocation formation in MCT structures.

Agency: Department of Defense | Branch: Missile Defense Agency | Program: SBIR | Phase: Phase II | Award Amount: 999.97K | Year: 2012

This program will develop a turnkey system capable of rapidly producing high-resolution maps of transmittance, energy gap, composition, lattice constant, second-phases and residual strain fields in a variety of substrates critical to Ballistic Missile Defense. The characterization tool developed under this program will address the needs of the fabricators of infrared detectors and focal plane arrays, by providing a means for rapid screening of substrates prior to fabrication of these devices. This capability promises to reduce the finished cost by removing substrates with sub-optimal properties prior to the costly detector fabrication process. The commercial system created by this program will also aid crystal growers by providing feedback on the quality of wafer production. The ability to measure the uniformity of composition along with the size and density of second-phases is invaluable for assessing the effects of process changes, and for improving furnace design and control by revealing the shape of the growth interface. The design is applicable to a variety of substrates for long-wave infrared sensors such as cadmium zinc telluride and gallium antimonide, and has the potential to substantially reduce production costs and to improve performance of these devices.

Agency: Department of Defense | Branch: Missile Defense Agency | Program: SBIR | Phase: Phase I | Award Amount: 99.97K | Year: 2011

The goal of this proposal is to develop fast wafer-scale techniques for characterization of Zn-concentration and precipitates and inclusions of Cd and Te. A novel approach to spectrometry will be used to develop a fully automated system for generation of high resolution 2D map of Zn-concentration that promises to be 10x-100x faster than current spectrometers. Advanced image processing techniques will be combined with infrared microscopy to generate 3D wafer-scale map of precipitates and inclusions, as well as decorated line defects in the CZT wafer. These capabilities promise to improve qualification of starting substrates as well as relating performance of MCT detectors with features of the substrate. These tools also promise to provide valuable insight into and help optimize bulk crystal growth processes.

Agency: Department of Homeland Security | Branch: | Program: SBIR | Phase: Phase II | Award Amount: 499.25K | Year: 2016

Thallium-Bromide is a promising semiconductor material for detection of gamma rays, primarily due its high atomic number, high electrical resistivity, and optimum bandgap energy. This program focuses on development of TlBr radiation detector modules for room temperature applications and demonstration of two types of Personal Radiation Detection (PRD) systems based on TlBr modules. A number of ANSI N42.32 compliant PRDs will be supplied to the government at the end of the program for evaluation.

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