Canatu Ltd.

Helsinki, Finland

Canatu Ltd.

Helsinki, Finland

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Jeon I.,University of Tokyo | Cui K.,University of Tokyo | Chiba T.,University of Tokyo | Anisimov A.,Canatu Ltd. | And 6 more authors.
Journal of the American Chemical Society | Year: 2015

Organic solar cells have been regarded as a promising electrical energy source. Transparent and conductive carbon nanotube film offers an alternative to commonly used ITO in photovoltaics with superior flexibility. This communication reports carbon nanotube-based indium-free organic solar cells and their flexible application. Direct and dry deposited carbon nanotube film doped with MoOx functions as an electron-blocking transparent electrode, and its performance is enhanced further by overcoating with PEDOT:PSS. The single-walled carbon nanotube organic solar cell in this work shows a power conversion efficiency of 6.04%. This value is 83% of the leading ITO-based device performance (7.48%). Flexible application shows 3.91% efficiency and is capable of withstanding a severe cyclic flex test. © 2015 American Chemical Society.


Nasibulin A.G.,Aalto University | Kaskela A.,Aalto University | Mustonen K.,Aalto University | Anisimov A.S.,Aalto University | And 11 more authors.
ACS Nano | Year: 2011

We report a simple and rapid method to prepare multifunctional free-standing single-walled carbon nanotube (SWCNT) films with variable thicknesses ranging from a submonolayer to a few micrometers having outstanding properties for a broad range of exceptionally performing devices. We have fabricated state-of-the-art key components from the same single component multifunctional SWCNT material for several high-impact application areas: high efficiency nanoparticle filters with a figure of merit of 147 Pa-1, transparent and conductive electrodes with a sheet resistance of 84 ω/ and a transmittance of 90%, electrochemical sensors with extremely low detection limits below 100 nM, and polymer-free saturable absorbers for ultrafast femtosecond lasers. Furthermore, the films are demonstrated as the main components in gas flowmeters, gas heaters, and transparent thermoacoustic loudspeakers. © 2011 American Chemical Society.


News Article | November 14, 2016
Site: www.newsmaker.com.au

Notes: Sales, means the sales volume of Aluminium Gallium Arsenide Semiconductor Revenue, means the sales value of Aluminium Gallium Arsenide Semiconductor This report studies sales (consumption) of Aluminium Gallium Arsenide Semiconductor in Global market, especially in USA, China, Europe, Japan, Korea and Taiwan, focuses on top players in these regions/countries, with sales, price, revenue and market share for each player in these regions, covering Cree Inc. International Quantum Epitaxy PLC Freescale Semiconductor Inc. LM Ericsson Telefon AB Canatu Ltd. Iljin Display General Electric ... Market Segment by Regions, this report splits Global into several key Regions, with sales (consumption), revenue, market share and growth rate of Aluminium Gallium Arsenide Semiconductor in these regions, from 2011 to 2021 (forecast), like USA China Europe Japan Korea Taiwan Split by product Types, with sales, revenue, price and gross margin, market share and growth rate of each type, can be divided into Type I Type II Type III Split by applications, this report focuses on sales, market share and growth rate of Aluminium Gallium Arsenide Semiconductor in each application, can be divided into Application 1 Application 2 Application 3 Global Aluminium Gallium Arsenide Semiconductor Sales Market Report 2016 1 Aluminium Gallium Arsenide Semiconductor Overview 1.1 Product Overview and Scope of Aluminium Gallium Arsenide Semiconductor 1.2 Classification of Aluminium Gallium Arsenide Semiconductor 1.2.1 Type I 1.2.2 Type II 1.2.3 Type III 1.3 Application of Aluminium Gallium Arsenide Semiconductor 1.3.1 Application 1 1.3.2 Application 2 1.3.3 Application 3 1.4 Aluminium Gallium Arsenide Semiconductor Market by Regions 1.4.1 USA Status and Prospect (2011-2021) 1.4.2 China Status and Prospect (2011-2021) 1.4.3 Europe Status and Prospect (2011-2021) 1.4.4 Japan Status and Prospect (2011-2021) 1.4.5 Korea Status and Prospect (2011-2021) 1.4.6 Taiwan Status and Prospect (2011-2021) 1.5 Global Market Size (Value and Volume) of Aluminium Gallium Arsenide Semiconductor (2011-2021) 1.5.1 Global Aluminium Gallium Arsenide Semiconductor Sales and Growth Rate (2011-2021) 1.5.2 Global Aluminium Gallium Arsenide Semiconductor Revenue and Growth Rate (2011-2021) 2 Global Aluminium Gallium Arsenide Semiconductor Competition by Manufacturers, Type and Application 2.1 Global Aluminium Gallium Arsenide Semiconductor Market Competition by Manufacturers 2.1.1 Global Aluminium Gallium Arsenide Semiconductor Sales and Market Share of Key Manufacturers (2011-2016) 2.1.2 Global Aluminium Gallium Arsenide Semiconductor Revenue and Share by Manufacturers (2011-2016) 2.2 Global Aluminium Gallium Arsenide Semiconductor (Volume and Value) by Type 2.2.1 Global Aluminium Gallium Arsenide Semiconductor Sales and Market Share by Type (2011-2016) 2.2.2 Global Aluminium Gallium Arsenide Semiconductor Revenue and Market Share by Type (2011-2016) 2.3 Global Aluminium Gallium Arsenide Semiconductor (Volume and Value) by Regions 2.3.1 Global Aluminium Gallium Arsenide Semiconductor Sales and Market Share by Regions (2011-2016) 2.3.2 Global Aluminium Gallium Arsenide Semiconductor Revenue and Market Share by Regions (2011-2016) 2.4 Global Aluminium Gallium Arsenide Semiconductor (Volume) by Application Figure Picture of Aluminium Gallium Arsenide Semiconductor Table Classification of Aluminium Gallium Arsenide Semiconductor Figure Global Sales Market Share of Aluminium Gallium Arsenide Semiconductor by Type in 2015 Figure Type I Picture Figure Type II Picture Table Applications of Aluminium Gallium Arsenide Semiconductor Figure Global Sales Market Share of Aluminium Gallium Arsenide Semiconductor by Application in 2015 Figure Application 1 Examples Figure Application 2 Examples Figure USA Aluminium Gallium Arsenide Semiconductor Revenue and Growth Rate (2011-2021) Figure China Aluminium Gallium Arsenide Semiconductor Revenue and Growth Rate (2011-2021) Figure Europe Aluminium Gallium Arsenide Semiconductor Revenue and Growth Rate (2011-2021) Figure Japan Aluminium Gallium Arsenide Semiconductor Revenue and Growth Rate (2011-2021) Figure Korea Aluminium Gallium Arsenide Semiconductor Revenue and Growth Rate (2011-2021) Figure Taiwan Aluminium Gallium Arsenide Semiconductor Revenue and Growth Rate (2011-2021) Figure Global Aluminium Gallium Arsenide Semiconductor Sales and Growth Rate (2011-2021) Figure Global Aluminium Gallium Arsenide Semiconductor Revenue and Growth Rate (2011-2021) Table Global Aluminium Gallium Arsenide Semiconductor Sales of Key Manufacturers (2011-2016) Table Global Aluminium Gallium Arsenide Semiconductor Sales Share by Manufacturers (2011-2016) Figure 2015 Aluminium Gallium Arsenide Semiconductor Sales Share by Manufacturers Figure 2016 Aluminium Gallium Arsenide Semiconductor Sales Share by Manufacturers Table Global Aluminium Gallium Arsenide Semiconductor Revenue by Manufacturers (2011-2016) Table Global Aluminium Gallium Arsenide Semiconductor Revenue Share by Manufacturers (2011-2016) Table 2015 Global Aluminium Gallium Arsenide Semiconductor Revenue Share by Manufacturers Table 2016 Global Aluminium Gallium Arsenide Semiconductor Revenue Share by Manufacturers Table Global Aluminium Gallium Arsenide Semiconductor Sales and Market Share by Type (2011-2016) Table Global Aluminium Gallium Arsenide Semiconductor Sales Share by Type (2011-2016) Figure Sales Market Share of Aluminium Gallium Arsenide Semiconductor by Type (2011-2016) Figure Global Aluminium Gallium Arsenide Semiconductor Sales Growth Rate by Type (2011-2016) Table Global Aluminium Gallium Arsenide Semiconductor Revenue and Market Share by Type (2011-2016) Table Global Aluminium Gallium Arsenide Semiconductor Revenue Share by Type (2011-2016) Figure Revenue Market Share of Aluminium Gallium Arsenide Semiconductor by Type (2011-2016) Figure Global Aluminium Gallium Arsenide Semiconductor Revenue Growth Rate by Type (2011-2016) Table Global Aluminium Gallium Arsenide Semiconductor Sales and Market Share by Regions (2011-2016) FOR ANY QUERY, REACH US @    Aluminium Gallium Arsenide Semiconductor Sales Global  Market Research Report 2016


Tian Y.,Aalto University | Jiang H.,Aalto University | Pfaler J.V.,Aalto University | Zhu Z.,Aalto University | And 7 more authors.
Journal of Physical Chemistry Letters | Year: 2010

The diameter of single-walled carbon nanotubes (SWNTs) is an important characteristic to determine their electronic properties and direct further applications in electronics and photonics. A demand currently exists for an accurate and rapid method of evaluating the mean diameter and diameter distribution of bulk SWNTs. Here, we provide an effective means for quantifying the diameter distribution of SWNTs using optical absorption spectroscopy without a strict prior assumption on the form of the diameter distribution. Verification of this assignment protocol is based upon statistical analysis of hundreds of high-resolution transmission electron microscopy (HRTEM) images as well as comparison with Raman measurements on the same SWNT samples. A good agreement among different techniques indicates that this approach enables accurate and rapid assessment of diameter distribution and can be extended to bulk SWNT samples with various diameter distributions. © 2010 American Chemical Society.


Tian Y.,Aalto University | Nasibulin A.G.,Aalto University | Aitchison B.,Canatu Ltd. | Nikitin T.,University of Helsinki | And 6 more authors.
Journal of Physical Chemistry C | Year: 2011

The growth mechanism and influence of synthesis parameters on the properties of single-walled carbon nanotubes (SWNTs) produced by ferrocene vapor decomposition in a carbon monoxide atmosphere have been investigated in detail by a combined study of Raman and UV-vis-NIR absorption spectroscopy and transmission electron microscopy (TEM). CO2 plays an essential role in selective etching of small diameter nanotubes and the purification of SWNTs. This etching effect is beneficial to narrow the diameter distribution and to control the average diameter of SWNTs. Increasing the synthesis temperature results in the formation of larger catalyst particles due to a higher agglomeration rate, thereby forming larger diameter nanotubes. Decreasing the CO flow rate, and thus lengthening the agglomeration time, also provides the possibility to enlarge the diameter of SWNTs. Therefore, by varying the growth parameters, the mean diameter of SWNTs can be effectively changed from 1.2 to 1.8 nm to satisfy the needs of various applications. © 2011 American Chemical Society.


Gorkina A.L.,Skolkovo Institute of Science and Technology | Tsapenko A.P.,Skolkovo Institute of Science and Technology | Gilshteyn E.P.,Skolkovo Institute of Science and Technology | Koltsova T.S.,Polytechnic University of Mozambique | And 7 more authors.
Carbon | Year: 2016

Carbon nanomaterials (carbon nanotubes (CNTs) and graphene) are promising materials for optoelectronic applications, including flexible transparent and conductive films (TCFs) due to their extraordinary electrical, optical and mechanical properties. However, the performance of CNT- or graphene-only TCFs still needs to be improved. One way to enhance the optoelectrical properties of TCFs is to hybridize CNTs and graphene. This approach leads to creation of a novel material that exhibits better properties than its individual constituents. In this work, the novel hybrid CNT-graphene nanomaterial was fabricated by graphene oxide deposition on top of CNT films. The graphene oxide was then reduced by thermal annealing at ambient atmosphere or in H2 atmosphere. At the final step the CNT-graphene hybrids were chemically doped using gold(III) chloride. As a result, we show that the hybrids demonstrate excellent optoelectrical performance with the sheet resistance as low as 73 Ω/□ at 90% transmittance. © 2016 Elsevier Ltd.


Reynaud O.,Aalto University | Nasibulin A.G.,Aalto University | Nasibulin A.G.,Skolkovo Institute of Science and Technology | Anisimov A.S.,Canatu Ltd | And 3 more authors.
Chemical Engineering Journal | Year: 2014

A mixture of single-walled and double-walled carbon nanotubes (CNTs) was synthesised by an aerosol CVD (floating catalyst) method for fabrication of highly conductive and transparent films. The feedstock solution contained ferrocene as a catalyst particle precursor, toluene and ethylene as carbon sources and thiophene as a promoter was introduced in the reactor in a hydrogen atmosphere and heated up in the temperature range of 1000-1200. °C. The product was collected downstream of the reactor by filtering the flow in the form of thin films with adjustable thicknesses (transmittance) and subsequently transferred on a desirable substrate by a dry transfer technique. This method allowed us to fabricate excellent quality CNT films with a high optoelectronic performance: with a sheet resistance of 86. Ω/sq. at the transmittance of T= 90%. To our best knowledge, for the first time the CNT transparent and conductive thin films were fabricated from direct filtration of gas phase grown CNTs using hydrocarbon as a carbon source. © 2014 Elsevier B.V.


Cui K.,University of Tokyo | Anisimov A.S.,Canatu Ltd | Chiba T.,University of Tokyo | Fujii S.,Japan National Institute of Advanced Industrial Science and Technology | And 6 more authors.
Journal of Materials Chemistry A | Year: 2014

By using the excellent optical and electrical properties of pristine SWNTs with long bundle lengths, we present single-walled carbon nanotube-silicon (SWNT/Si) solar cells of 11% power conversion efficiency (PCE), prepared without doping. The PCEs of the fabricated solar cells even increased slightly after 10 months of exposure to ambient conditions, without any external protection. The open-circuit voltage of the SWNT/Si solar cells under low light intensities, down to 10 mW cm-2, demonstrated the characteristics of the ideal p-n junction model. The mechanism was discussed, taking into account the effect of varying the interfacial oxide layer thickness between the SWNTs and Si on the solar cell's performance. The high efficiency and stability demonstrated in this study make SWNT/Si solar cells one of practical choices for next generation energy system. © 2014 the Partner Organisations.

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