Cameca SAS

Gennevilliers, France

Cameca SAS

Gennevilliers, France
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Microscopy Devices (Scanning Probe Microscopes, Electron Microscopes, Optical Microscopes, and Others) Market for Nanotechnology, Life Sciences, Semiconductors, Material Sciences and Others Applications: Global Industry Perspective, Comprehensive Analysis, Size, Share, Growth, Segment, Trends and Forecast, 2014 – 2020 The report covers forecast and analysis for the microscopy devices market on a global and regional level. The study provides historic data of 2014 along with a forecast from 2015 to 2020 based on revenue (USD million). The study includes drivers and restraints for the microscopy devices market along with the impact they have on the demand over the forecast period. Additionally, the report includes the study of opportunities available in the microscopy devices market on a global level. In order to give the users of this report a comprehensive view on the microscopy devices, we have included a detailed competitive scenario and product portfolio of key vendors. To understand the competitive landscape in the market, an analysis of Porter’s Five Forces model for the microscopy devices market has also been included. The study encompasses a market attractiveness analysis, wherein application segments are benchmarked based on their market size, growth rate and general attractiveness. The study provides a decisive view on the microscopy devices market by segmenting the market based on applications. All the application segments have been analyzed based on present and future trends and the market is estimated from 2014 to 2020. Key product segmented market covered under this study includes scanning probe microscopes, electron microscopes, optical microscopes and others. Key application segmented market covered under this study includes nanotechnology, life sciences, semiconductors, material sciences and others. The regional segmentation includes the current and forecast demand for North America, Europe, Asia Pacific, Latin America and Middle East & Africa with its further bifurcation into major countries including U.S. Germany, France, UK, China, Japan, India and Brazil. This segmentation includes demand for microscopy devices based on individual applications in all the regions and countries. The report also includes detailed profiles of end players such as Olympus, JEOL Company, FEI Company, Danish Micro Engineering A/S, Hitachi High Tech, Cameca SAS, Bruker Corporation, Carl Zeiss, NT-MDT and Nikon. The detailed description of players includes parameters such as company overview, financial overview, business strategies and recent developments of the company. This report segments the global microscopy devices market as follows:

Larson D.J.,Cameca Instruments Inc. | Lawrence D.,Cameca Instruments Inc. | Lefebvre W.,University of Rouen | Olson D.,Cameca Instruments Inc. | And 10 more authors.
Journal of Physics: Conference Series | Year: 2011

Atom probe tomography and scanning transmission electron microscopy has been used to analyze a commercial microelectronics device prepared by depackaging and focused ion beam milling. Chemical and morphological data are presented from the source, drain and channel regions, and part of the gate oxide region of an Intel® i5-650 p-FET device demonstrating feasibility in using these techniques to investigate commercial chips.

Kouzminov D.,Varian Semiconductor Equipment Associates | Merkulov A.,CAMECA S.A. | Arevalo E.,Varian Semiconductor Equipment Associates | Grossmann H.-J.,Varian Semiconductor Equipment Associates
Surface and Interface Analysis | Year: 2013

Secondary ion mass spectrometry analysis of ultra-shallow (sub-200 eV) B implants is complicated by the presence of native oxide on the surface of Si. Knowledge of the type of oxide present on the surface as well as accurate oxide thickness is very important for correct data reduction in extra-low energy depth profiling. Sputter rate (SR) variation approach based on the accurate SR measurement in Si and SiO2 can be successfully applied to B implants done through thermal oxides of various thicknesses. Lowest profiling energy should be used to achieve the least profile distortion in the case of de-channeled B implants: the rule of half of the implant energy used for profiling energy is confirmed. Profiling energy that is equal to the implant energy can be used if implantation is done through native oxide or into the stripped Si. If no thermal oxide is present on the surface, the most consistent result will be obtained when implants are done into the pre-stripped Si thus eliminating uncontrollable and variable native oxide-related issues. Copyright © 2012 John Wiley & Sons, Ltd. Copyright © 2012 John Wiley & Sons, Ltd.

Merkulov A.,CAMECA SA
Surface and Interface Analysis | Year: 2013

Secondary negative ions yields of elements in the IIIrd, IV th, Vth periodic table groups emitted under Cs+ bombardment of Si surface in presence of oxygen are reported. The ion yield variation on oxygen partial pressure in the analytical chamber obtained for different ions allows taking a step forward the development of secondary ion emission model. The ion yield enhancement under particular oxygen surface coverage offers an approach for quantitative analysis of ultra-shallow semiconductor structures and interfaces. Copyright © 2012 John Wiley & Sons, Ltd. Copyright © 2012 John Wiley & Sons, Ltd.

Hauri E.H.,Carnegie Institution of Washington | Papineau D.,Carnegie Institution of Washington | Papineau D.,University College London | Wang J.,Carnegie Institution of Washington | Hillion F.,Cameca SAS
Chemical Geology | Year: 2016

We report here data of multiple sulfur isotopes (32S, 33S, and 34S) measured by NanoSIMS 50L ion microprobe in Fe-Ni-Cu standards, and pyrite grains recovered from the Neoarchean Abitibi Supracrustal Terrain, Canada. Careful attention to instrument tuning, sample preparation and sample stage positioning results in highly precise and accurate data for 32S-33S-34S similar to that of larger radius SIMS instruments. Our results using a multi-Faraday collection system demonstrate that the NanoSIMS 50L instrument is capable of high-precision measurements of multiple isotopes of sulfur capable of resolving mass-independent variations in 33S ({increment}33S) on the order of 0.4‰ (2σ) with improvements possible with higher S count rates. Pyrite grains from the Abitibi Supracrustal terrane have a large range of δ34S values between -9.6 and +6.3‰, and corresponding {increment}33S values between -0.8 and +1.5‰, consistent with other datasets from Neoarchean sedimentary rocks. The new data indicate the incorporation of atmospheric sulfur affected by mass-independent fractionation (MIF) of 33S into the Neoarchean marine sulfur cycle and point to subsequent sulfate reducing microorganisms at that time. © 2015 Elsevier B.V..

Kinno T.,Toshiba Corporation | Akutsu H.,Toshiba Corporation | Tomita M.,Toshiba Corporation | Kawanaka S.,Toshiba Corporation | And 7 more authors.
Applied Surface Science | Year: 2012

Laser-assisted atom probe tomography (LA-APT) was applied to NiPtSi (0, 30, and 50% Pt contents) thin films on Si substrates. Consistent results with those of high-resolution Rutherford backscattering spectrometry (HR-RBS) were obtained. Based on the obtained data sets, the composition profiles from only the signals of single-hit events, meaning detection of one ion by one laser pulse, were compiled. The profiles from only the signals of multi-hit events, meaning detection of multiple ions by one laser pulse, were also compiled. There were large discrepancies with respect to Ni and Pt concentrations among the compiled profiles and the original profiles including the signals of both types of detection events. Additionally, the profiles compiled from single-hit events showed that Si concentration in NiPtSi layer became smaller toward the surface, differing from the original profiles and the multi-hit profiles. These results suggest that capability of simultaneous multiple-ion detection is important for appropriate LA-APT analyses. © 2012 Elsevier B.V.

Merkulov A.,CAMECA SAS | Peres P.,CAMECA SAS | Choi S.,CAMECA SAS | Desse F.,CAMECA SAS | Schuhmacher M.,CAMECA SAS
Surface and Interface Analysis | Year: 2011

This paper presents an investigation on SIMS profile quantification for ultra-shallow profiles. New configuration for the Cesium and Oxygen sources on the CAMECA IMS Wf tool provides SIMS profiling capability at 150 eV impact energy with a sputter rate of 1 and 2 nm/min for the Cs+ and O 2 + primary beams, respectively. Results for as-implanted B, P and As profiles using extremely low impact energy (EXLIE) sputtering conditions are compared with HR-RBS and ERDA profiles. Copyright © 2010 John Wiley & Sons, Ltd.

Vurpillot F.,CNRS Material Physics Group | Gruber M.,CNRS Material Physics Group | Da Costa G.,CNRS Material Physics Group | Martin I.,CAMECA SAS | And 2 more authors.
Ultramicroscopy | Year: 2011

Data collected in atom probe tomography have to be carefully analysed in order to give reliable composition data accurately and precisely positioned in the probed volume. Indeed, the large analysed surfaces of recent instruments require reconstruction methods taking into account not only the tip geometry but also accurate knowledge of geometrical projection parameters. This is particularly crucial in the analysis of multilayers materials or planar interfaces. The current work presents a simulation model that enables extraction of the two main projection features as a function of the tip and atom probe instrumentation geometries. Conversely to standard assumptions, the image compression factor and the field factor vary significantly during the analysis. An improved reconstruction method taking into account the intrinsic shape of a sample containing planar features is proposed to overcome this shortcoming. © 2011 Elsevier B.V.

Merkulov A.,CAMECA SAS | Peres P.,CAMECA SAS | Choi S.,CAMECA SAS | Horreard F.,CAMECA SAS | And 3 more authors.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | Year: 2010

This article presents investigation on secondary ion mass spectroscopy (SIMS) profile quantification for ultrashallow profiles. New configuration for the cesium and oxygen sources on the CAMECA IMS Wf tool-provides SIMS profiling capability at 150 eV impact energy with sputter rates of 1 and 2 nm/min for the Cs+ and O2+ primary beams, respectively. Results for as-implanted B, P, and As profiles using extremely low impact energy (EXLIE) sputtering conditions are reported. They are compared with high resolution Rutherford backscattering spectroscopy and elastic recoil detection analysis profiles. The overall results confirm that the use of EXLIE conditions minimizes near surface (depth <5 nm) artifacts but data quantification still requires dedicated postanalysis data treatment to take into account matrix effects between Si and Si O2. © 2010 American Vacuum Society.

Lejeune A.,Center University Of Saint Jerome | Lejeune A.,Cameca SAS | Cherigier-Kovacic L.,Center University Of Saint Jerome | Doveil F.,Center University Of Saint Jerome
AIP Conference Proceedings | Year: 2014

Answering to a long-standing challenge, a new way to non-intrusively measure weak electric fields in plasmas is presented. Here we show it using an H(2s) atomic probe beam, obtained from the conversion of H+ ions into H(2s) either by collisions with H2 residual gas or in a resonant charge exchange cesium cell. The probe beam is sent between two polarized plates creating an electric field applied within a thermionic plasma. Indeed the interaction between a metastable H(2s) atomic hydrogen beam and an external electric field leads to the emission of the Lyman-alpha line owing to the Stark mixing of the 2s1/2 and 2p1/2 levels. When the field is weak, it can be treated as a perturbation of these two states separated by a small amount of energy called Lamb-shift. It induces a radiation with intensity proportional to the square modulus of the electric field which is measured in a direction perpendicular to the probe beam. Contrary to measurements in vacuum, the Debye sheath formation is clearly observed in the presence of plasma. This contribution reviews: presentation of Stark mixing of the 2s1/2 and 2p1/2 levels and of Lamb shift for hydrogen-like atoms, brief description of the experimental set-up, observation of the formation of a sheath between two polarized plane electrodes in a plasma, either with a probe ion beam, or atom beam. © 2014 AIP Publishing LLC.

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