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Unterschleißheim, Germany

Ehrke H.-U.,CAMECA GmbH | Loibl N.,CAMECA GmbH | Moret M.P.,Cameca SAS | Horrard F.,Cameca SAS | And 6 more authors.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Secondary ion mass spectrometry (SIMS) and low energy electron induced x-ray emission spectroscopy (LEXES) are both well established technologies. SIMS tools are the ultimate reference for depth profiling and direct measurement of dopants with highest sensitivity and dynamic range. The LEXES-based shallow probe is a versatile, sensitive, in-line metrology tool for thin layer elemental composition and dopant dosimetry in semiconductor production. In this contribution, the ability of LEXES and SIMS techniques to differentiate nominal dose differences among three different 300 mm patterned wafers are compared. In each die, several test pads were available for dose measurements. Five neighboring dies were measured by LEXES and afterward by SIMS. The repeatability measurements of both techniques (<0.5%) is suitable to determine dose nonuniformity from die to die and to discriminate nominal dose between wafers as small as 3%. © 2010 American Vacuum Society. Source

Merkulov A.,Cameca SAS | Peres P.,Cameca SAS | Choi S.,Cameca SAS | Horreard F.,Cameca SAS | And 3 more authors.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

This article presents investigation on secondary ion mass spectroscopy (SIMS) profile quantification for ultrashallow profiles. New configuration for the cesium and oxygen sources on the CAMECA IMS Wf tool-provides SIMS profiling capability at 150 eV impact energy with sputter rates of 1 and 2 nm/min for the Cs+ and O2+ primary beams, respectively. Results for as-implanted B, P, and As profiles using extremely low impact energy (EXLIE) sputtering conditions are reported. They are compared with high resolution Rutherford backscattering spectroscopy and elastic recoil detection analysis profiles. The overall results confirm that the use of EXLIE conditions minimizes near surface (depth <5 nm) artifacts but data quantification still requires dedicated postanalysis data treatment to take into account matrix effects between Si and Si O2. © 2010 American Vacuum Society. Source

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