Aurora, IL, United States

Cabot Microelectronics Corporation

www.cabotcmp.com
Aurora, IL, United States

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Patent
Cabot Microelectronics Corporation | Date: 2017-05-03

Methods for fabricating a chemical-mechanical polishing composition include growing colloidal silica abrasive particles in a liquid including an aminosilane compound such that the aminosilane compound becomes incorporated in the abrasive particles. A dispersion including such colloidal silica abrasive particles may be further processed to obtain a chemical-mechanical polishing composition including colloidal silica particles having the aminosilane compound incorporated therein.


Patent
Cabot Microelectronics Corporation | Date: 2017-01-18

The present invention provides chemical-mechanical polishing (CMP) methods for polishing a tungsten containing substrate. The polishing compositions used with the methods of the invention comprise an aqueous carrier, an abrasive, a polyamino compound, a metal ion, a chelating agent, an oxidizing agent, and optionally, an amino acid. The methods of the invention effectively remove tungsten while reducing surface defects such as recesses typically associated with tungsten CMP.


Patent
Cabot Microelectronics Corporation | Date: 2017-02-01

A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, first and second colloidal silica abrasives dispersed in the liquid carrier, and an iron containing accelerator. The first colloidal silica abrasive and the second colloidal silica abrasive each have a permanent positive charge of at least 10 mV. An average particle size of the second silica abrasive is at least 20 nanometers greater than an average particle size of the first silica abrasive. A method for chemical mechanical polishing a substrate including a tungsten layer is further disclosed. The method may include contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.


Patent
Cabot Microelectronics Corporation | Date: 2017-05-03

A chemical-mechanical polishing concentrate includes at least 10 weight percent of a colloidal silica abrasive particle dispersed in a liquid carrier having a pH in a range from about 1.5 to about 7. The colloidal silica abrasive includes an aminosilane compound or a phosphonium silane compound incorporated therein. The concentrate may be diluted with at least 3 parts water per one part concentrate prior to use.


Patent
Cabot Microelectronics Corporation | Date: 2017-01-18

A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, an amine compound in solution in the liquid carrier, and an iron containing accelerator. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.


Patent
Cabot Microelectronics Corporation | Date: 2017-05-24

The invention provides a composition for cleaning contaminants from semiconductor wafers following chemical-mechanical polishing. The cleaning composition contains a bulky protecting ligand, an organic amine, an organic inhibitor, and water. The invention also provides methods for using the cleaning composition.


The invention provides stabilized solutions useful as raw materials in various applications and methods for stabilizing such aqueous solutions with a stabilizer comprising one or more dialkylhydroxylamines or inorganic or organic acid salts thereof. Stabilized solutions and methods for stabilizing aqueous solutions thereof, include, for example, those of tris(2 -hydroxy ethyl)methylammonium hydroxide (THEMAH) and/or carbohydrazide (CHZ).


Patent
Cabot Microelectronics Corporation | Date: 2017-01-25

The invention provides a chemical-mechanical polishing composition comprising (a) wet-process ceria, (b) a water-soluble cationic polymer or copolymer, (c) an aromatic carboxylic acid or heteroaromatic carboxylic acid, and (d) water, wherein the polishing composition has a pH of about 3 to about 6. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide.


Patent
Cabot Microelectronics Corporation | Date: 2016-04-05

The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a substrate, such as a nickel-phosphorous substrate. The composition contains water, silica particles, a first alcohol comprising one or more of monohydric alcohol, polyhydric alcohol, and diglycol, a second alcohol in the form of polyvinyl alcohol, a nickel complexing agent, and optionally hydrogen peroxide, pH adjuster, and/or biocide. The method involves contacting the substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.


Patent
Cabot Microelectronics Corporation | Date: 2016-07-12

Described are materials and methods for processing (polishing or planarizing) a substrate that contains pattern dielectric material using a polishing composition (aka slurry) and an abrasive pad, e.g., CMP processing.

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