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Patent
Cabot Microelectronics Corporation | Date: 2016-08-31

Described are materials and methods for processing (polishing or planarizing) a substrate that contains pattern dielectric material using a polishing composition (aka slurry) and an abrasive pad, e.g., CMP processing.


Patent
Cabot Microelectronics Corporation | Date: 2016-10-31

The invention provides a chemical-mechanical polishing composition including first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 40 nm to about 100 nm, are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. %, and have a particle size distribution of at least about 300 nm, a functionalized heterocycle, a pH-adjusting agent, and an aqueous carrier, and wherein the pH of the polishing composition is about 1 to about 6. The invention also provides a method of polishing a substrate, especially a substrate comprising a silicon oxide layer, with the polishing composition.


Patent
Cabot Microelectronics Corporation | Date: 2016-11-09

The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound.


Patent
Cabot Microelectronics Corporation | Date: 2016-09-23

A chemical-mechanical polishing pad comprising a polyurethane polishing layer having a high storage modulus at low temperatures and a low storage modulus at high temperatures is disclosed. For example, the disclosed pad embodiments may be fabricated from a thermoplastic polyurethane having a ratio of storage modulus at 25 degrees C. to storage modulus at 80 degrees C. of 50 or more. The thermoplastic polyurethane polishing layer may further optionally have a Shore D hardness of 70 or more, a tensile elongation of 320 percent or less, a storage modulus at 25 degrees C. of 1200 MPa or more, and/or a storage modulus at 80 degrees C. of 15 MPa or less.


Patent
Cabot Microelectronics Corporation | Date: 2016-04-05

The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a substrate, such as a nickel-phosphorous substrate. The composition contains water, silica particles, a first alcohol comprising one or more of monohydric alcohol, polyhydric alcohol, and diglycol, a second alcohol in the form of polyvinyl alcohol, a nickel complexing agent, and optionally hydrogen peroxide, pH adjuster, and/or biocide. The method involves contacting the substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.


Patent
Cabot Microelectronics Corporation | Date: 2016-07-12

Described are materials and methods for processing (polishing or planarizing) a substrate that contains pattern dielectric material using a polishing composition (aka slurry) and an abrasive pad, e.g., CMP processing.


Patent
Cabot Microelectronics Corporation | Date: 2015-06-25

A chemical-mechanical polishing composition includes colloidal silica abrasive particles dispersed in a liquid carrier having a pH in a range from about 1.5 to about 7. The colloidal silica abrasive particles include an aminosilane compound or a phosphonium silane compound incorporated therein. The composition may be used to polish a substrate including a silicon oxygen material such as TEOS.


Patent
Cabot Microelectronics Corporation | Date: 2015-06-25

A chemical-mechanical polishing composition includes colloidal silica abrasive particles dispersed in a liquid carrier. The colloidal silica abrasive particles include a nitrogen-containing or phosphorus-containing compound incorporated therein such that the particles have a positive charge. The composition may be used to polish a substrate including a silicon oxygen material such as TEOS.


Patent
Cabot Microelectronics Corporation | Date: 2015-06-25

Methods for fabricating a chemical-mechanical polishing composition include growing colloidal silica abrasive particles in a liquid including an aminosilane compound such that the aminosilane compound becomes incorporated in the abrasive particles. A dispersion including such colloidal silica abrasive particles may be further processed to obtain a chemical-mechanical polishing composition including colloidal silica particles having the aminosilane compound incorporated therein.


Patent
Cabot Microelectronics Corporation | Date: 2015-08-28

An improved composition and method for polishing a sapphire surface is disclosed. The method comprises abrading a sapphire surface, such as a C-plane, R-plane or A-plane surface of a sapphire wafer, with a polishing composition comprising colloidal silica suspended in an aqueous medium, the polishing composition having an acidic pH and including a sapphire removal rate-enhancing amount of phosphoric acid.

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