Lin R.-M.,Chang Gung University |
Yu S.-F.,National Cheng Kung University |
Chang S.-J.,National Cheng Kung University |
Chiang T.-H.,National Cheng Kung University |
And 2 more authors.
Applied Physics Letters | Year: 2012
In this study, we observed a dramatic decrease in the efficiency droop of InGaN/GaN light-emitting diodes after positioning a p-InGaN insertion layer before the p-AlGaN electron-blocking layer. The saturated external quantum efficiency of this device extended to 316 mA, with an efficiency droop of only 7% upon increasing the operating current to 1 A; in contrast, the corresponding conventional light-emitting diode suffered a severe efficiency droop of 42%. We suspect that the asymmetric carrier distribution was effectively mitigated as a result of an improvement in the hole injection rate and a suppression of electron overflow. © 2012 American Institute of Physics.