Entity

Time filter

Source Type

Surry Hills, Australia

Patent
Bt Imaging Pty Ltd. | Date: 2015-07-22

A method (


Methods are presented for separating the effects of background doping density and effective minority carrier lifetime on photoluminescence (PL) generated from semiconductor materials. In one embodiment the background doping density is measured by another technique, enabling PL measurements to be analysed in terms of effective minority carrier lifetime. In another embodiment the effective lifetime is measured by another technique, enabling PL measurements to be analysed in terms of background doping density. In another embodiment, the effect of background doping density is removed by calculating intensity ratios of two PL measurements obtained in different spectral regions, or generated by different excitation wavelengths. The methods are particularly useful for bulk samples such as bricks or ingots of silicon, where information can be obtained over a much wider range of bulk lifetime values than is possible with thin, surface-limited samples such as silicon wafers. The methods may find application in solar cell manufacturing.


Methods are presented for separating the effects of background doping density and effective minority carrier lifetime on photoluminescence (PL) generated from semiconductor materials. In one embodiment the background doping density is measured by another technique, enabling PL measurements to be analysed in terms of effective minority carrier lifetime. In another embodiment the effective lifetime is measured by another technique, enabling PL measurements to be analysed in terms of background doping density. In another embodiment, the effect of background doping density is removed by calculating intensity ratios of two PL measurements obtained in different spectral regions, or generated by different excitation wavelengths. The methods are particularly useful for bulk samples such as bricks or ingots of silicon, where information can be obtained over a much wider range of bulk lifetime values than is possible with thin, surface-limited samples such as silicon wafers. The methods may find application in solar cell manufacturing.


Patent
Bt Imaging Pty Ltd | Date: 2012-04-17

Luminescence-based methods are disclosed for determining quantitative values for the series resistance across a photovoltaic cell, preferably without making electrical contact to the cell. Luminescence signals are generated by exposing the cell to uniform and patterned illumination with excitation light selected to generate luminescence from the cell, with the illumination patterns preferably produced using one or more filters selected to attenuate the excitation light and transmit the luminescence.


Patent
Bt Imaging Pty Ltd. | Date: 2013-07-05

Methods and systems are presented for analysing semiconductor materials as they progress along a production line, using photoluminescence images acquired using line-scanning techniques. The photoluminescence images can be analysed to obtain spatially resolved information on one or more properties of said material, such as lateral charge carrier transport, defects and the presence of cracks. In one preferred embodiment the methods and systems are used to obtain series resistance images of silicon photovoltaic cells without making electrical contact with the sample cell.

Discover hidden collaborations