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Brandenburg an der Havel, Germany

Taoka N.,Ihp Microelectronics | Capellini G.,Ihp Microelectronics | Capellini G.,Third University of Rome | Von Den Driesch N.,PGi | And 7 more authors.
Applied Physics Express | Year: 2016

A key factor for controlling Sn migration during GeSn deposition at a high temperature of 400 °C was investigated. Calculated results with a simple model for the Sn migration and experimental results clarified that low-deposition-speed (vd) deposition with vd's of 0.68 and 2.8 nm/min induces significant Sn precipitation, whereas high-deposition-speed (vd = 13 nm/min) deposition leads to high crystallinity and good photoluminescence spectrum of the GeSn layer. These results indicate that vd is a key parameter, and that control of Sn migration at a high temperature is possible. These results are of great relevance for the application of high-quality Sn-based alloys in future optoelectronics devices. © 2016 The Japan Society of Applied Physics. Source


Taoka N.,Ihp Microelectronics | Asano T.,Nagoya University | Asano T.,Japan Society for the Promotion of Science | Yamaha T.,Nagoya University | And 9 more authors.
Applied Physics Letters | Year: 2015

The distributions of Sn concentration in GeSnSi layers formed on Ge substrate at various temperatures were investigated. High deposition temperature (Td) induces significant Sn migration and desorption, which have activation energies of 0.75 eV and 0.27 eV, respectively. A model quantitatively clarified the Sn migration fluxes during the deposition, which increase not only with increasing Td but also with the layer thickness. A non-negligible Sn flux compared with the supplied flux was found at 350 °C at the surface of the 200-nm-thick layer. Consequently, designs of layer thickness and Td taking into account the appropriate Sn flux are important to form a GeSnSi layer with uniform Sn content for future optoelectronics. © 2015 AIP Publishing LLC. Source

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