Bluestone Global Technology Ltd
Bluestone Global Technology Ltd
BLUESTONE GLOBAL Technology Ltd | Date: 2012-08-23
Aspects of the invention are directed to a method of forming graphene structures. Initially, a cluster of particles is received. The cluster of particles comprises a plurality of particles with each particle in the plurality of particles contacting one or more other particles in the plurality of particles. Subsequently, one or more layers are deposited on the cluster of particles with the one or more layers comprising graphene. The plurality of particles are then etched away without substantially etching the deposited one or more layers. Lastly, the remaining one or more layers are dried. The resultant graphene structures are particularly resistant to the negative effects of aggregation and compaction.
BLUESTONE GLOBAL Technology LTD. | Date: 2012-10-19
Improved methods for synthesizing large area thin films are disclosed, which result in films of enhanced width. The methods comprise providing a separator material which is rolled or wound up, along with the metallic foil substrate on which the thin film is to be deposited, to form a coiled composite which is then subjected to conventional chemical vapor deposition. Optionally, a winding tool may be used to aid in the rolling process. The methods enable a many-fold increase in the effective width of the substrate to be achieved.
BLUESTONE GLOBAL Technology Ltd | Date: 2013-01-22
Aspects of the invention are directed to a method for forming a hybrid structure. Initially, a wire is received and an encapsulating film is deposited on the wire. Subsequently, the wire is selectively removed to leave a hollow tube formed of the encapsulating film. A plurality of active particles are then placed into the hollow tube by immersing the hollow tube in a suspension comprising the plurality of active particles and a liquid. Lastly, the hollow tube and the plurality of active particles therein are removed from the suspension and allowed to dry so as to form a cluster of active particles at least partially encapsulated by the encapsulating film.
BLUESTONE GLOBAL Technology Ltd | Date: 2013-01-09
Aspects of the invention are directed to a container comprising a tub, a basket, and a lid. The tub is adapted to hold a liquid and comprises a bottom and a tub sidewall having an upper rim defining an opening in the tub. The basket is disposed on the bottom of the tub and comprises a base and a basket sidewall. The base defines a perimeter, and the basket sidewall runs along at least a portion of this perimeter. The lid contacts the upper rim and comprises a filler piece. The filler piece occupies a volume inside the tub between the base and a plane defined by the upper rim. The container is adapted to hold a sensitive film stack without damage or degradation to the film stack. The container is further adapted to facilitate the easy transfer of the film stack to a new substrate.
BLUESTONE GLOBAL Technology Ltd | Date: 2012-08-09
An article of manufacture comprises an electrically conductive plate and one or more hybrid layers stacked on the electrically conductive plate. Each of the one or more hybrid layers comprises a respective sheet comprising graphene. Each of the one or more hybrid layers also comprises a respective plurality of particles disposed on the respective sheet. Finally, each of the one or more hybrid layers comprises a respective ion conducting film disposed on the respective plurality of particles and the respective sheet.
Agency: GTR | Branch: EPSRC | Program: | Phase: Research Grant | Award Amount: 438.49K | Year: 2015
The isolation of single-atomic layer graphene has led to a surge of interest in other layered crystals with strong in-plane bonds and weak, van der Waals-like, interlayer coupling. A variety of two-dimensional (2D) crystals have been investigated, including large band gap insulators and semiconductors with smaller band gaps such as transition metal dichalcogenides. Interest in these systems is motivated partly by the need to combine them with graphene to create field effect transistors with high on-off switching ratios. More importantly, heterostructures made by stacking different 2D crystals on top of each other provide a platform for creating new artificial crystals with potential for discoveries and applications. The possibility of making van der Waals heterostructures has been demonstrated experimentally only for a few 2D crystals. However, some of the currently available 2D layers are unstable under ambient conditions, and those that are stable offer only limited functionalities, i.e. low carrier mobility, weak optical emission/absorption, band gaps that cannot be tuned, etc. In a recent series of pilot experiments, we have demonstrated that nanoflakes of the III-VI layer compound, InSe, with thickness between 5 and 20 nanometers, have a thickness-tuneable direct energy gap and a sufficiently high chemical stability to allow us to combine them with graphene and related layer compounds to make heterostructures with novel electrical and optical properties. The main goal of this project is to develop graphene-hybrid heterostructures based on this novel class of two-dimensional (2D) III-VI van der Waals crystals. This group of semiconductors will enrich the current library of 2D crystals by overcoming limitations of currently available 2D layers and by offering a versatile range of electronic and optical properties. From the growth and fabrication of new systems to the demonstration of prototype devices, including vertical tunnel transistors and optical-enhanced-microcavity LEDs, our project will provide a platform for scientific investigations and will contribute to the technology push required to create new routes to device miniaturization, fast-electronics, sensing and photonics. There is great potential for further growth of all these sectors as the fabrication of 2D systems improves and as new properties are discovered and implemented in functional devices.
BLUESTONE GLOBAL Technology LTD. | Date: 2013-01-25
The invention provides improved paper-like electrodes and electrode active materials for use in flexible energy storage devices, and methods for preparing such electrodes and materials, as well as flexible energy storage devices fabricated from such electrodes and materials and methods of making such devices. The electrodes and electrode active materials comprise multi-layer high-quality thin carbon films, and the methods comprise the use of a repetitive laminar process to deposit such films directly on polymer separators or electrolyte membranes.
BLUESTONE GLOBAL Technology Ltd | Date: 2012-09-05
Aspects of the invention are directed to a method of forming a thin film adhered to a target substrate. The method comprises the steps of: (i) forming the thin film on a deposition substrate; (ii) depositing a support layer on the thin film; (iii) removing the deposition substrate without substantially removing the thin film and the support layer; (iv) drying the thin film and the support layer while the thin film is only adhered to the support layer; (v) placing the dried thin film and the dried support layer on the target substrate such that the thin film adheres to the target substrate; and (vi) removing the support layer without substantially removing the thin film and the target substrate.
BLUESTONE GLOBAL Technology Ltd | Date: 2012-10-02
Aspects of the invention are directed to an electrode for use in an electronic device. The electrode comprises a plurality of nanostructures and a passivating film. Each nanostructure in the plurality of nanostructures contacts or is fused to one or more other nanostructures in the plurality of nanostructures. The passivating film at least partially covers the plurality of nanostructures and comprises one or more layers of graphene.
Bluestone Global Technology Ltd. | Date: 2013-03-18
Aspects of the invention are directed to a method of forming a film on a substrate. The substrate and a solid carbon source are placed into a reactor. Subsequently, both the substrate and the solid carbon source are heated. Optionally, one or more process gases may be introduced into the reactor to help drive the formation of the film. The film comprises graphene.